ADE-208-1375 1st. Edition Mar. 2001 Features on-resistance leakag
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Top Searches for this datasheet
H5N2504DL, H5N2504DS
ADE-208-1375 1st. Edition Mar. 2001 Features
on-resistance leakage current High speed switching gate charge Avalanche ratings
Outline
DPAK-2
H5N2504DS
H5N2504DL
Gate Drain Source Drain
H5N2504DL, H5N2504DS
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel case Thermal Impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C 150°C Symbol VDSS VGSS
Note1 (pulse)
Ratings
Unit °C/W
Note1 (pulse)
4.17 +150
Note2 ch-c Tstg
H5N2504DL, H5N2504DS
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source leak current Symbol V(BR)DSS 0.48 0.85 0.48 ±0.1 0.63 0.67 1.30 Unit Test conditions Note4 Note4 Note4 35.7 diF/dt A/µs
Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: Pulse test VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off)
H5N2504DL, H5N2504DS
Main Characteristics
Power Temperature Derating Operation
this area
Maximum Safe Operation Area
Channel Dissipation
Drain Current
(°C)
Case Temperature
0.03 limited RDS(on) 25°C 0.01 Drain Source Voltage
1000
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
75°C
25°C
Drain Source Voltage
-25°C Gate Source Voltage
H5N2504DL, H5N2504DS
Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage VDS(on) Pulse Test Drain Source State Resistance RDS(on) Static Drain Source State Resistance Drain Current Pulse Test
ID=5A Gate Source Voltage
Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current 0.02 0.05 75°C 25°C -25°C
ID=5A
Pulse Test
Case Temperature (°C)
Drain Current
H5N2504DL, H5N2504DS
Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) Capacitance (pF)
5000 2000 1000
Typical Capacitance Drain Source Voltage Ciss
25°C Reverse Drain Current
Coss
Crss Drain Source Voltage
Dynamic Input Characteristics 1000
Switching Characteristics duty
Gate Source Voltage
Switching Time (ns)
Drain Source Voltage
d(off)
d(on)
Gate Charge (nc)
Drain Current
H5N2504DL, H5N2504DS
Reverse Drain Current Source Drain Voltage Gate Source Cutoff Voltage Temperature
VGS(off) Gate Source Cutoff Voltage
Reverse Drain Current
10mA
5,10 Pulse Test
0.1mA
Source Drain Voltage
Case Temperature (°C)
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
H5N2504DL, H5N2504DS
Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance 25°C
0.05
c(t) 4.17°C/W, 25°C
0.03
0.02 0.01 ulse
0.01
Pulse Width
H5N2504DL, H5N2504DS
Package Dimensions January, 2001
Unit:
0.55
16.2
1.15 (0.7)
0.55 2.29 2.29
0.55
Hitachi Code JEDEC EIAJ Mass (reference value)
DPAK (L)-(2) 0.42
H5N2504DL, H5N2504DS
January, 2001
Unit:
0.55 (4.9)
0.25
1.15 2.29 2.29
0.55
Hitachi Code JEDEC EIAJ Mass (reference value)
(5.3)
DPAK (S)-(1),(2) Conforms 0.28
H5N2504DL, H5N2504DS
January, 2001
Unit:
0.55 (5.1)
(0.1)
(0.1)
0.25
1.15 2.29 2.29
0.55
Hitachi Code JEDEC EIAJ Mass (reference value)
(5.1)
DPAK (S)-(3) Conforms 0.28
H5N2504DL, H5N2504DS
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
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further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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