Silicon Channel MOSFET High Speed Power Switching ADE-208-1378 Ta

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Silicon Channel MOSFET High Speed Power Switching ADE-208-1378 Ta

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H5N2509P
Silicon Channel MOSFET High Speed Power Switching
ADE-208-1378 Target Specification 1st. Edition Mar. 2001 Features
on-resistance leakage current High speed switching gate charge Avalanche ratings RDS(on) 0.053 typ.
Outline
TO-3P
Gate Drain (Flange) Source
H5N2509P
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS
Note1 (pulse)
Ratings
Unit °C/W
Note1 (pulse)
0.833 +150
Note3
Note2
ch-c Tstg
Notes: duty cycle Value 25°C 150°C
H5N2509P
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source leak current Symbol V(BR)DSS 0.053 3600 ±0.1 0.069 1.35 Unit Test conditions Note4 Note4 diF/dt A/µs
Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) td(off)
H5N2509P
Main Characteristics
Power Temparature Derating 1000 area limited (°C) Case Temparature
DS(on)
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this
25°C 1000 Drain Source Voltage
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Source Voltage
Drain Current
Drain Current
75°C 25°C -25°C Gate Source Voltage
H5N2509P
RDS(on)
Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage DS(on) Pulse Test
Drain Source State Resistance
Static Drain Source State Resistance Drain Current Pulse Test
Drain Current
Gate Source Voltage
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current
-25°C
25°C 75°C
Pulse Test Drain Current
Cace Temperature (°C)
H5N2509P
Body-Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) 1000 Capacitance (pF)
50000 20000 10000 5000 2000 1000
Typical Capacitance Drain Source Voltage
Ciss
Coss Crss Drain Source Voltage
25°C Reverse Drain Current
Dynamic Input Characteristics
10000
Switching Characteristics duty
Switching Time (ns)
Drain Source Voltage
1000 d(off) d(on) Drain Current
Gate Charge (nC)
Gate Source Voltage
H5N2509P
Reverce Drain Current Source Drain Voltage Gate Source Cutoff Voltage GS(off) Reverce Drain Current Gate Source Cutoff Voltage Case Temperature
10mA 0.1mA
Pulse Test Source Drain Voltage
Case Temperature (°C)
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
H5N2509P
Normalized Transient Thermal Impedance Pulse Width 25°C
Normalized Transient Thermal Impedance
0.05
c(t) 0.833°C/W, 25°C
0.03
0.02
0.01
Pulse Width
H5N2509P
Package Dimension
Unit:
15.6
14.9
19.9
18.0
5.45
5.45
Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P Conforms
H5N2509P
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
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Silicon Channel MOSFET High Speed Power Switching ADE-208-1378 Ta

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