ADE-208-1380 1st. Edition Mar. 2001 Features on-resistance leakag

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ADE-208-1380 1st. Edition Mar. 2001 Features on-resistance leakag

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H5N5001FM
ADE-208-1380 1st. Edition Mar. 2001 Features
on-resistance leakage current High speed switching gate charge Avalanche ratings RDS(on) =1.1 typ. =1µA 15ns 15nC
Outline
TO-220FM
Gate Drain Source
H5N5001FM
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel case Thermal Impedance Channel temperature Storage temperature Note: 10µs, duty cycle Value 25°C 150°C Symbol VDSS VGSS D(pulse) DR(pulse) Note3
Note2 Note1 Note1
Ratings 4.17 +150
Unit °C/W
ch-c Tstg
H5N5001FM
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source leak current Symbol V(BR)DSS 0.85 ±0.1 Unit Test Conditions 10mA, ±30V, 1mA, 2.5A, 10VNote4 2.5A, Note4 1MHz 2.5A 400V diF/ =100A/µs
Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss d(on) d(off)
H5N5001FM
Main Characteristics
Power Temperature Derating 0.03 0.01 (°C) Case Temperature
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on)
1000 Drain Source Voltage
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
H5N5001FM
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage DS(on)
Pulse Test
Drain Source State Resistance DS(on)
Static Drain Source State Resistance Drain Current Pulse Test
ID=5A
Gate Source Voltage
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current Pulse Test Drain Current
ID=5A
Case Temperature (°C)
H5N5001FM
Body-Drain Diode Reverse Recovery Time 1000
5000 2000
Typical Capacitance Drain Source Voltage Ciss
Reverse Recovery Time (ns)
Capacitance (pF)
1000
Coss
Reverse Drain Current
Crss
Drain Source Voltage
Dynamic Input Characteristics 1000
Drain Source Voltage
Gate Source Voltage
Switching Time (ns)
1000
Switching Characteristics duty
d(on) Drain Current d(off)
Gate Charge (nC)
H5N5001FM
Reverse Drain Current Source Drain Voltage Reverse Drain Current Gate Source Cutoff Voltage VGS(off) Gate Source Cutoff Voltage Case Temperature
10mA 0.1mA
Pulse Test Source Drain Voltage
(°C)
Case Temperature
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
H5N5001FM
Normalized Transient Thermal Impedance Pulse Width 25°C Normalized Transient Thermal Impedance
0.05
0.03
0.02
0.01
c(t) 4.17 °C/W,
0.003
0.001
Pulse Width
H5N5001FM
Package Dimensions
10.0
January, 2001
Unit:
12.0
4.45 14.0
Hitachi Code JEDEC EIAJ Mass (reference value) TO-220FM Conforms
2.54 2.54
17.0
H5N5001FM
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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ADE-208-1380 1st. Edition Mar. 2001 Features on-resistance leakag

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