RENFET RDS(ON) 16.5m TO-252 (DPAK) 0.265 (6.73) 0.255 (

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RENFET RDS(ON) 16.5m TO-252 (DPAK) 0.265 (6.73) 0.255 (

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GFD25N03
RENFET
RDS(ON) 16.5m
TO-252 (DPAK)
0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23)
0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89)
0.190 (4.826)
0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49)
0.165 (4.191)
0.060 (1.52) 0.045 (1.14)
0.100 (2.54)
0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96)
0.118 (3.0)
0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03)
Dimensions inches (millimeters)
0.243 (6.172)
0.063 (1.6)
Mounting Layout
Mechanical Data
Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Weight: 0.011oz., 0.4g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency Gate Charge
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C Pulsed Drain Current Power Dissipation 150°C
25°C unless otherwise noted)
Symbol 25°C 70°C 25°C 70°C 25°C(2) Tstg
Limit
Unit
Operating Junction Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
°C/W °C/W 9/17/01
Notes: Pulse width limited maximum junction temperature Surface mounted 1in2 (FR-4 material)
GFD25N03
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(1) Continuous Source Current (Diode Conduction)
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 20V, 24V, 24V, 125°C 10V, 4.5V,
12.5
16.5
td(on) td(off) Ciss Coss Crss
15V, 5V,ID 15V,
1173
15V, VGEN 10V,
15V, 1.0MHZ
19A,
Notes: Pulse test; pulse width duty cycle
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GFD25N03
Ratings Characteristic Curves
4.0V, 4.5V, 5.0V,
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
Drain Source Current
3.0V 2.5V
Drain Current
3.5V
125°C
-55°C
25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
250µA 0.025
Fig. On-Resistance Drain Current
VGS(th) Threshold Voltage
RDS(ON) On-Resistance
0.02 4.5V 0.015
0.01
0.005
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GFD25N03
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.07 0.06 0.05 0.04 0.03 0.02 0.01 25°C
Fig. Gate Charge
Gate-to-Source Voltage
RDS(ON) On-Resistance
125°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1500 Ciss 1200 1MHZ
Fig. Source-Drain Diode Forward Voltage
Source Current
Capacitance (pF)
125°C
25°C
-55°C
Crss
Coss
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage

RENFET RDS(ON) 16.5m TO-252 (DPAK) 0.265 (6.73) 0.255 (

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