IRG4CF50WB IRG4CF50WB IGBT Wafer Form Size Warp Speed Wafer

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IRG4CF50WB IRG4CF50WB IGBT Wafer Form Size Warp Speed Wafer

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IRG4CF50WB
IRG4CF50WB IGBT Wafer Form
Size Warp Speed Wafer
Electrical Characteristics Wafer Form
Parameter (on) V(BR)CES VGE(th) ICES IGES Description Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.11V Max. Collector-to-Emitter Breakdown Voltage 900V Min. Gate Threshold Voltage 3.0V Min., 6.0V Max. Zero Gate Voltage Collector Current Max. Gate-to-Emitter Leakage Current Max. Test Conditions 10A, 25°C, 25°C, ICES 250µA, =25°C, =250µA 25°C, 900V 25°C,
Mechanical Data
Cr-Ni-Ag 1kA-2kA-.2.5kA microns) 0.257" 0.260" 150mm, with std. flat .015" -.003" 01-5270 Microns 0.25mm Diameter Minimum Consistent throughout same wafer Store original container, dessicated nitrogen, with contamination Recommended Attach Conditions optimum electrical results, attach temperature should exceed 300C Reference Standard packaged part (for design) IRG4PF50W (When available) Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Mechanical Dwg. Number Minimum Street Width Reject Size Location Recommended Storage Environment:
Outline
8/29/01

IRG4CF50WB IRG4CF50WB IGBT Wafer Form Size Warp Speed Wafer

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