Silicon Channel Power Power switching SOP-8 Features

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Silicon Channel Power Power switching SOP-8 Features

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HAT2010F
Silicon Channel Power
Power switching
SOP-8
Features
on-resistance Capable gate drive drive current High density mounting
Ordering Information
Hitachi Code EIAJ Code JEDEC Code FP-8D SC-527-8A
Source Gate Drain
Table Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch*** Pch** Tstg
MOS1
MOS2
Ratings +150
Unit
duty cycle Drive operation When using glass epoxy board Drive operation When using glass epoxy board
HAT2010F
Table Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Unit Test conditions ±100
0.06 0.075
0.09 0.13
Forward tramsfer admittance |yfs| Ciss Coss Crss td(on)
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Pulse Test
td(off)
HAT2010F
Power Temperature Derating Test Condition When using glass epoxy board
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on)
(°C)
Ambient Temperature
0.03 0.01 shot Pulse Drain Source Voltage Drive Operation When using glass epoxy board
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics 75°C -25°C 25°C
Drain Current
Drain Current
Drain Source Voltage
Pulse Test Gate Source Voltage
HAT2010F
Drain Source Saturation Voltage Gate Source Voltage DS(on) Drain Source State Resistance DS(on) Pulse Test
Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Voltage
ID=2A Gate Source Voltage
0.05
0.02 0.01
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.20 Pulse Test 0.16
Forward Transfer Admittance Drain Current
0.12
Pulse Test Drain Current
0.08
0.04
Case Temperature (°C)
HAT2010F
Reverse Recovery Time (ns)
Body-Drain Diode Reverse Recovery Time
Typical Capacitance Drain Source Voltage 10000 3000 1000 Ciss Coss Crss Drain Source Voltage
di/dt A/µs 25°C Reverse Drain Current
Capacitance (pF)
Dynamic Input Characteristics
2000 1000 Switching Time (ns)
Switching Characteristics duty d(off) d(on)
Gate Charge (nc)
Drain Source Voltage
Gate Source Voltage
Drain Current
HAT2010F
Reverse Drain Current Souece Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Package Dimensions
SOP-8
Unit
5.25 4.55
0.75
2.00
2.03
0.20 0.02
0.05
1.27 0.40
0.10 0.05
0.10 0.10
0.25 0.60 0.18
0.12 FP-8D Hitachi Code SC-527-8A EIAJ JEDEC

Silicon Channel Power Power switching SOP-8 Features

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