Silicon Channel Power Power switching SOP-8 Features

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Silicon Channel Power Power switching SOP-8 Features

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HAT2008F
Silicon Channel Power
Power switching
SOP-8
Features
on-resistance Capable 2.5V gate drive drive current High density mounting
Ordering Information
Hitachi Cord EIAJ Cord JEDEC Cord FP-8D SC-527-8A
Source Gate Drain
Table Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch*** Pch** Tstg
MOS1
MOS2
Ratings +150
Unit
duty cycle Drive operation When using glass epoxy board Drive operation When using glass epoxy board
HAT2008F
Table Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Unit Test conditions ±200 ±6.5
0.055 0.075
=2.5V
0.07 0.11
Forward tramsfer admittance |yfs| Ciss Coss Crss td(on)
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Pulse Test
td(off)
HAT2008F
Power Temperature Derating Test Condition When using glass epoxy board
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on) 0.03 0.01 shot Pulse Drain Source Voltage
(°C)
Ambient Temperature
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
75°C
25°C -25°C
Drain Source Voltage
Gate Source Voltage
HAT2008F
Drain Source Saturation Voltage Gate Source Voltage DS(on) Pulse Test Drain Source State Resistance DS(on)
Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Voltage
ID=5A Gate Source Voltage
0.05
0.02 0.01
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.20 Pulse Test 0.16 IC=5A
Forward Transfer Admittance Drain Current
Pulse Test Drain Current
0.12
0.08
0.04
Case Temperature (°C)
HAT2008F
Body-Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) di/dt A/µs 25°C
Typical Capacitance Drain Source Voltage 10000 3000 1000 Ciss Coss Crss Drain Source Voltage
Reverse Drain Current
Capacitance (pF)
Dynamic Input Characteristics
Switching Characteristics
Switching Time (ns)
d(off)
Drain Source Voltage
Gate Source Voltage
d(on)
Gate Charge (nc)
duty Drain Current
HAT2008F
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Package Dimensions
SOP-8 5.25 4.55
Unit
0.75
2.00
2.03
0.20 0.02
0.05
1.27 0.40
0.10 0.05
0.10 0.10
0.25 0.60 0.18
0.12 FP-8D Hitachi Code SC-527-8A EIAJ JEDEC

Silicon Channel Power Power switching SOP-8 Features

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