Silicon Channel Power Power switching synchronously Rectifier

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Channel Power Power switching synchronously Rectifier

Datasheet Thumbnail

Top Searches for this datasheet

HAT2007F
Silicon Channel Power
Power switching synchronously Rectifier
SOP-8
Features
on-resistance Capable gate drive drive current High density mounting
Ordering Information
Hitachi Code EIAJ Code JEDEC Code FP-8D SC-527-8A
Source Gate Drain
Table Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch** Tstg Ratings +150 Unit
duty cycle When using glass epoxy board
HAT2007F
Table Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Unit Test conditions ±100
0.04 0.07
0.065 0.11
Forward transfer admittance |yfs| Ciss Coss Crss td(on) td(off)
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Pulse Test
HAT2007F
Power Temperature Derating Test Condition When using glass epoxy board
Drain Current
Maximum Safe Operation Area
Channel Dissipation
Operation this area limited DS(on)
(°C)
Ambient Temperature
0.03 0.01 shot Pulse Drain Source Voltage
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
HAT2007F
Drain Source Saturation Voltage Gate Source Voltage DS(on) Pulse Test Drain Source State Resistance DS(on)
Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Voltage
ID=5A Gate Source Voltage
0.05
0.02 0.01
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.20 Pulse Test 0.16
Forward Transfer Admittance Drain Current
0.12
IC=5A
0.08
0.04
Case Temperature (°C)
Pulse Test
Drain Current
HAT2007F
Reverse Recovery Time (ns)
Body-Drain Diode Reverse Recovery Time
Typical Capacitance Drain Source Voltage 10000 3000 1000 Ciss Coss Crss
di/dt A/µs 25°C Reverse Drain Current
Capacitance (pF)
Drain Source Voltage
Dynamic Input Characteristics
1000
Switching Characteristics
duty Switching Time (ns)
Drain Source Voltage
Gate Source Voltage
d(off)
Gate Charge (nc)
d(on)
Drain Current
HAT2007F
Reverse Drain Current Souece Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Package Dimensions
Unit SOP-8
5.25 4.55
0.75
2.00
2.03
0.20 0.02
0.05
1.27 0.40
0.10 0.05
0.10 0.10
0.25 0.60 0.18
0.12 FP-8D Hitachi Code SC-527-8A EIAJ JEDEC

Silicon Channel Power Power switching synchronously Rectifier

Top Searches for this datasheet

Other recent searches