Silicon Channel Power Power switching SOP-8 Features
|
|
|
Top Searches for this datasheet
HAT2004F
Silicon Channel Power
Power switching
SOP-8
Features
on-resistance Capable 2.5V gate drive drive current High density mounting
Ordering Information
Hitachi Code EIAJ Code JEDEC Code FP-8D SC-527-8A
Source Gate Drain
Table Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch*** Pch** Tstg
MOS1
MOS2
Ratings +150
Unit
duty cycle Drive operation When using glass epoxy board Drive operation When using glass epoxy board
HAT2004F
Table Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Unit Test conditions ±200 ±6.5
0.055 0.07
=2.5V
0.07 0.09
Forward tramsfer admittance |yfs| Ciss Coss Crss td(on)*
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Pulse Test
td(off)*
HAT2004F
Power Temperature Derating Test Condition When using glass epoxy board
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on)
(°C)
Ambient Temperature
0.03 shot pulse 0.01 Drain Source Voltage Drive Operation When using glass epoxy board
Typical Output Characteristics
Typical Transfer Characteristics Pulse Test -25°C
25°C 75°C
Drain Current
Drain Current
Pulse Test Drain Source Voltage
Gate Source Voltage
HAT2004F
Drain Source Saturation Voltage Gate Source Voltage DS(on) Pulse Test Drain Source State Resistance DS(on)
Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Voltage
ID=2A
0.05
0.02 0.01
Gate Source Voltage
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.20 Pulse Test 0.16
Forward Transfer Admittance Drain Current
0.12
Pulse Test
0.08
0.04
Case Temperature (°C)
Drain Current
HAT2004F
Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns)
10000 3000 1000
Typical Capacitance Drain Source Voltage
Capacitance (pF)
Ciss Coss Crss
di/dt A/µs 25°C Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Switching Time (ns)
d(on) duty Drain Current d(off)
Drain Source Voltage
Gate Charge (nc)
Gate Source Voltage
HAT2004F
Reverse Drain Current Souece Drain Voltage Pulse Test Reverse Drain Current
Source Drain Voltage
Package Dimensions
SOP-8 5.25 4.55
Unit
0.75
2.00
2.03
0.20 0.02
0.05
1.27 0.40
0.10 0.05
0.10 0.10
0.25 0.60 0.18
0.12 FP-8D Hitachi Code SC-527-8A EIAJ JEDEC
Other recent searches
TS1G - TS1G TS1G Datasheet
2GSDG - 2GSDG 2GSDG Datasheet
TMS320VC5441 - TMS320VC5441 TMS320VC5441 Datasheet
MO-178 - MO-178 MO-178 Datasheet
MDR-4X08 - MDR-4X08 MDR-4X08 Datasheet
KSB1017 - KSB1017 KSB1017 Datasheet
KSD1408 - KSD1408 KSD1408 Datasheet
ICS345 - ICS345 ICS345 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
