Silicon Channel Power Power switching Synchronously Rectifier
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HAT2002F
Silicon Channel Power
Power switching Synchronously Rectifier
SOP-8
Features
on-resistance Capable gate drive drive current High density mounting
Ordering Information
Hitachi Code EIAJ Code JEDEC Code FP-8D SC-527-8A
Source Gate Drain
Table Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch** Tstg Ratings +150 Unit
duty cycle When using glass epoxy board
HAT2002F
Table Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Unit Test conditions ±100
0.03 0.04
0.05 0.06
Forward transfer admittance |yfs| Ciss Coss Crss td(on) td(off)
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Pulse Test
HAT2002F
Power Temperature Derating Test Condition When using glass epoxy board
Maximum Safe Operation Area
Channel Dissipation
Operation this area limited DS(on)
Drain Current
0.03 (°C) 0.01 Drain Source Voltage
Case Temperature
When using glass epoxy board
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
Drain Source Voltage
75°C
25°C -25°C
Gate Source Voltage
HAT2002F
Drain Source Saturation Voltage Gate Source Voltage DS(on) Pulse Test Drain Source State Resistance DS(on)
Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Voltage
ID=3A Gate Source Voltage
0.05
0.02 0.01
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.10 Pulse Test 0.08
Forward Transfer Admittance Drain Current
Pulse Test
0.06
0.04
0.02
Case Temperature (°C)
Drain Current
HAT2002F
Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) Capacitance (pF)
Typical Capacitance Drain Source Voltage 5000 2000 1000 Ciss Coss
Drain Source Voltage Crss
di/dt A/µs 25°C Reverse Drain Current
Dynamic Input Characteristics
1000
Switching Characteristics
duty Switching Time (ns)
Drain Source Voltage
ID=5A
Gate Source Voltage
d(on) d(off)
Gate Charge (nc)
Drain Current
HAT2002F
Reverse Drain Current Souece Drain Voltage Pulse Test Reverse Drain Current
Source Drain Voltage
Package Dimensions
Unit SOP-8
5.25 4.55
0.75
2.00
2.03
0.20 0.02
0.05
1.27 0.40
0.10 0.05
0.10 0.10
0.25 0.60 0.18
0.12 FP-8D Hitachi Code SC-527-8A EIAJ JEDEC
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