Silicon Channel Power SOP-8 Power switching Features
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HAT2001F
Silicon Channel Power
SOP-8
Power switching
Features
on-resistance Capable of2.5V gate drive drive current High density mounting
Ordering Information
Hitachi Code EIAJ Code JEDEC Code FP-8D SC-527-8A
Source Gate Drain
Table Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch** Tstg
Ratings +150
Unit
duty cycle When using glass epoxy board
HAT2001F
Table Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Unit Test conditions ±200 ±6.5
0.035 0.045
0.045 0.06
Forward transfer admittance |yfs| Ciss Coss Crss td(on) td(off)
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Pulse Test 1250
HAT2001F
Power Temperature Derating Test Condition When using glass epoxy board
Drain Current
Maximum Safe Operation Area
Channel Dissipation
Operation this area limited DS(on)
(°C)
Ambient Temperature
0.03 0.01 shot Pulse Drain Source Voltage When using glass epoxy board
Typical Output Characteristics
Typical Transfer Characteristics Pulse Test
Drain Current
75°C 25°C -25°C
Drain Current
Drain Source Voltage
Gate Source Voltage
HAT2001F
Drain Source Saturation Voltage Gate Source Voltage DS(on) Pulse Test Drain Source State Resistance DS(on)
Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Voltage
ID=5A
0.05
Gate Source Voltage
0.02 0.01
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.10 Pulse Test 0.08
Forward Transfer Admittance Drain Current
0.06
Pulse Test Drain Current
0.04
0.02
Case Temperature (°C)
HAT2001F
Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) di/dt A/µs 25°C
Typical Capacitance Drain Source Voltage 10000 3000 Ciss 1000 Coss Crss
Capacitance (pF)
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
1000
Switching Characteristics
duty Switching Time (ns) d(off) d(on)
Drain Source Voltage
Gate Charge (nc)
Gate Source Voltage
Drain Current
HAT2001F
Reverse Drain Current Souece Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Package Dimensions
Unit SOP-8
5.25 4.55
0.75
2.00
2.03
0.20 0.02
0.05
1.27 0.40
0.10 0.05
0.10 0.10
0.25 0.60 0.18
0.12 FP-8D Hitachi Code SC-527-8A EIAJ JEDEC
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