ADE-208-457 5th. Edition June. 1996 Features on-resistance Capabl

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ADE-208-457 5th. Edition June. 1996 Features on-resistance Capabl

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HAT1026R
ADE-208-457 5th. Edition June. 1996 Features
on-resistance Capable gate drive drive current High density mounting
Outline
SOP-8
Source Gate Drain
HAT1026R
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Symbol VDSS VGSS ID(pulse)Note1 Ratings +150 Unit
Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Note2 Tstg
10µs, duty cycle When using glass epoxy board (FR4 mm),
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltege drain current IGSS IDSS -1.0 0.028 0.04 1700 1000 -0.9 -2.5 0.037 0.065 -1.4 -7A, ±16V, -10V, -1mA -4A, -10V Note3 -4A, Note3 -4A, -10V Note3 -10V 1MHz -4V, -10V V(BR)GSS ±100 Symbol Unit Test Conditions -10mA, V(BR)DSS
Gate source cutoff voltage VGS(off) Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test td(on) td(off)
-7A, diF/ =20A/µs
HAT1026R
Main Characteristics
Power Temperature Derating
-100
Maximum Safe Operation Area
Test Condition When using glass epoxy board (FR4 40x40x1.6 mm),
Channel Dissipation
Drain Current
-0.3 -0.1 -0.03
Operation this area limited DS(on) shot Pulse
(°C)
-0.01 -0.01 -0.03 -0.1 -0.3
Ambient Temperature
Drain Source Voltage
Note When using glass epoxy board (FR4 40x40x1.6
-100
Typical Output Characteristics -10V -4.5 Pulse Test
Typical Transfer Characteristics -25°C 25°C 75°C
Drain Current
Drain Current
-3.5
-2.5
Pulse Test Gate Source Voltage
Drain Source Voltage
HAT1026R
Drain Source Saturation Voltage Gate Source Voltage
DS(on)
Static Drain Source State Resistance Drain Current
Drain Source State Resistance DS(on)
-0.5
Pulse Test
Pulse Test
-0.4
Drain Source Voltage
-0.3
0.05
-0.2
0.02 0.01
-0.1
0.005
Gate Source Voltage
-0.2
-0.5 Drain Current
Static Drain Source State Resistance DS(on)
Pulse Test 0.08 0.06 0.04 0.02
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.10
Forward Transfer Admittance Drain Current
-0.2
Pulse Test -0.5 Drain Current
Case Temperature (°C)
HAT1026R
Body-Drain Diode Reverse Recovery Time 10000 3000 1000 Drain Source Voltage Crss Typical Capacitance Drain Source Voltage Ciss Coss
Reverse Recovery Time (ns)
di/dt A/µs 25°C
-0.1 -0.2 -0.5 Reverse Drain Current
Capacitance (pF)
Dynamic Input Characteristics
Switching Characteristics
Switching Time (ns)
1000 d(off) d(on) duty -0.5 Drain Current
Drain Source Voltage
Gate Source Voltage
-0.1 -0.2
Gate Charge (nc)
HAT1026R
Reverse Drain Current Souece Drain Voltage Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance
25°C
0.05
0.02 0.01
0.01
f(t) 83.3 °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
1000
Pulse Width
HAT1026R
Package Dimentions
Unit:
1.75
0.25
1.27 0.51 0.25 1.27
0.15 0.25 Hitachi Code FP-8DA EIAJ MS-012AA JEDEC

ADE-208-457 5th. Edition June. 1996 Features on-resistance Capabl

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