ADE-208-437 7th. Edition December. 1996 Features on-resistance Ca

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ADE-208-437 7th. Edition December. 1996 Features on-resistance Ca

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HAT1025R
ADE-208-437 7th. Edition December. 1996 Features
on-resistance Capable gate drive drive current High density mounting
Outline
SOP-8
Source Gate Drain
MOS1
MOS2
HAT1025R
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Symbol VDSS VGSS ID(pulse)Note1 Ratings -4.5 -4.5 +150 Unit
Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Note2 Note3 Tstg
10µs, duty cycle Drive operation When using glass epoxy board (FR4 mm), Drive operation When using glass epoxy board (FR4 mm),
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltege drain current IGSS IDSS -0.5 0.065 0.09 -0.9 -1.5 0.095 0.15 -1.4 -4.5A, Note4 ±8V, -10V, -1mA -3A, Note4 -3A, -2.5V Note4 -3A, -10V Note4 -10V 1MHz -4V, -10V V(BR)GSS ±100 Symbol Unit Test Conditions -10mA, V(BR)DSS
Gate source cutoff voltage VGS(off) Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage td(on) td(off)
HAT1025R
Body-drain diode reverse recovery time Note: Pulse test -4.5A, diF/ =20A/µs
HAT1025R
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area -100
Test Condition When using glass epoxy board (FR4 40x40x1.6 mm),
Channel Dissipation
Drain Current
(°C)
Ambient Temperature
Operation Note -0.3 this area limited DS(on) -0.1 -0.03 shot Pulse Drive Operation -0.01 -0.1 -0.3 -100 Drain Source Voltage Note When using glass epoxy board (FR4 40x40x1.6
Typical Output Characteristics -3.5 Pulse Test
Typical Transfer Characteristics
-2.5
Drain Current
-1.5 Drain Source Voltage
Drain Current
Pulse Test Gate Source Voltage
HAT1025R
Drain Source Saturation Voltage Gate Source Voltage
Drain Source State Resistance DS(on)
-0.5
Drain Source Saturation Voltage DS(on)
Static Drain Source State Resistance Drain Current -2.5
-0.4
-0.3
-0.2 -0.5
0.05
-0.1
0.02 0.01 -0.2
Gate Source Voltage
-0.5 Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature 0.20
Forward Transfer Admittance Drain Current -0.2 Pulse Test -0.5 Drain Current
0.16
-0.5 -2.5
0.12
0.08 -0.5 0.04
Case Temperature (°C)
HAT1025R
Body-Drain Diode Reverse Recovery Time 10000 3000 1000 Crss Ciss Coss Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
-0.2 -0.5 Reverse Drain Current
Capacitance (pF)
Drain Source Voltage
Dynamic Input Characteristics
Switching Time (ns)
Switching Characteristics
d(off) d(on)
Drain Source Voltage
Gate Source Voltage
-4.5 Gate Charge (nc)
-0.2
duty -0.5 Drain Current
HAT1025R
Reverse Drain Current Souece Drain Voltage Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width Drive Operation) Normalized Transient Thermal Impedance
0.05
0.02 0.01
0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
1000
Pulse Width
HAT1025R
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
Normalized Transient Thermal Impedance
0.05
0.02 0.01
0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
1000
Pulse Width
HAT1025R
Package Dimensions
Unit:
1.75
0.25
1.27 0.51 0.25 1.27
0.15 0.25 Hitachi code EIAJ JEDEC FP-8DA MS-012AA

ADE-208-437 7th. Edition December. 1996 Features on-resistance Ca

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