VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70 25/70 IGBT, max. case operating temperature min. IEC-EN 60721-3-3 25/70 25/70 sin.; 1200 1200 +150 (125) 2500 40/125/56 2200
SKiM® IGBT Modules SKiM
Preliminary Data
Inverse Diode
Characteristics
V(BR)CES VGE(th) ICES IGES VCEsat VCE, VCES
min.
typ.
1,35 (2,1) (1,6) 1,67
max. Units
°C/W °C/W °C/W °C/W
VCES
Features channel, homogeneous planar IGBT Silicon structure with buffer layer (soft punch through) technology inductance case Fast soft inverse diodes Isolated (Direct Copper Bonded) ceramic plate Pressure contact technology thermal contacts Spring contact system attach driver control terminals Integrated temperature sensor Typical Applications Switched mode power supplies Three phase inverters motor speed control Switching (not linear use)
Cies Coes Cres resistance, terminal-chip; td(on) td(off) Eoff IRRM Rthjh RthjhD R'thjc R'thjcD ind. load RGon RGoff
Inverse Diode (125) (125) °C2) (125) °C2) IGBT diode IGBT diode
0,135 0,185 0,031 0,046
Thermal Characteristics unless otherwise specified GEoff Measured chip level mounting instructions Corresponding value. This value cannot measured. only given comparison. Controlled Axial Lifetime Technology
Temperature Sensor tolerance
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SKiM 350GD128DM.xls
Eoff
SKiM 350GD128DM.xls
Eoff
Fig. Turn-on /-off energy (IC)
Fig. Turn-on /-off energy (RG)
1000
SKiM 350GD128DM.xls
tp=16µs 100µs
pulse
SKiM 350GD128DM.xls
RGoff 1000
10ms
1000 10000 ICpuls/IC 1000 1200 1400
Fig. Maximum safe operating area (SOA) (VCE)
SKiM 350GD128DM.xls
Fig. Turn-off safe operating area (RBSOA)
SKiM 350GD128DM.xls
allowed numbers short circuits: <1000 time between short circuits: ICSC/IC
1000 1200 1400
Fig. Safe operating area short circuit (VCE)
Fig. Rated current temperature (THS)
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SKiM 350GD128DM.xls
SKiM 350GD128DM.xls
Fig. Typ. output characteristic,
Fig. Typ. output characteristic,
SKiM 350GD128DM.xls
Fig. Saturation characteristic (IGBT) Calculation elements equations
QGate 1000 1500 2000 800V
SKiM 350GD128DM.xls
Fig. Typ. transfer characteristic,
ICpuls
SKiM 350GD128DM.xls
Cies
Coes Cres
VCE10
Fig. Typ. gate charge characteristic
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Fig. Typ. capacitances
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1000
SKiM 350GD128DM.xls
tdoff
tdon
RGon RGoff ind. load
10000
SKiM 350GD128DM.xls
tdoff 1000
ind. load
tdon
Fig. Typ. switch times
Fig. Typ. switch times gate resistor
Tj=125°C, typ. Tj=25°C, typ.
SKiM 350GD128DM.xls
Fig. Typ. diode forward characteristic
SKiM 350GD128DM.xls
Fig. Diode turn-off energy dissipation pulse
SKiM 350GD128DM.xls
0,01 D=0,50 0,20 0,10 0,05 0,02 0,01 0,01
0,001
D=0,5 0,05 0,02 0,01 single pulse
0,0001 ZthJHS
0,001 ZthJHS
single pulse
0,00001 0,00001 0,0001
0,001
0,01
0,0001 0,00001 0,0001
0,001
0,01
Fig. Transient thermal impedance IGBT ZthJHS (tp);
Fig. Transient thermal impedance inverse diodes ZthJHS (tp);
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Dimensions Case outline circuit diagram
Mechanical Data
Symbol Conditions min.
heatsink, Units heatsink, Units terminals, Units terminals, Units (M5) (M6)
Values typ.
Units max.
5x9,81 lb.in. lb.in. m/s2
This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
This technical information specifies semiconductor devices promises characteristics. warranty guarantee expressed implied made regarding delivery, performance suitability.
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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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