Product Description SDM-09060-B1F power module impedance matched, sing

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Product Description SDM-09060-B1F power module impedance matched, sing

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SDM-09060-B1F
Product Description SDM-09060-B1F power module impedance matched, single-stage, push-pull Class amplifier module suitable power amplifier driver output stage. drop-in, no-tune solution high power applications requiring high efficiency, excellent linearity, unit-to-unit repeatability. 925-960 Class Power Amplifier Module
+28V
Vds1
Balun RFin Balun
impedance Output P1dB negative supply required High Gain: Typical High Efficiency Protection: JEDEC Class (2000V HBM)
Applications
+28V
Case Flange Ground Specifications Symbol Frequency P1dB Gain Gain Flatness Efficiency Delay Phase Linearity
Base Station driver Repeater CDMA EDGE
Parameters Frequency Operation Output Power Compression, Gain PEP, 942MHz 943MHz Peak-to-Peak Gain Variation, PEP, 960MHz Drain Efficiency PEP, 942MHz 943MHz Input Return Loss Output Power, 960MHz Order Product, PEP, 942MHz 943MHz Signal Delay from Deviation from Linear Phase (Peak-to-Peak)
Units
Min.
Typ.
Max.
Test Conditions Zout 28.0V, IDQ1 IDQ2 =300mA, TFlange
information provided herein believed reliable press time. Sirenza Microdevices assumes responsibility inaccuracies ommisions. Sirenza Microdevices assumes responsibility this information, such information shall entirely user's risk. Prices specifications subject change without notice. patent rights licenses circuits described herein implied granted third party. Sirenza Microdevices does authorize warrant Sirenza Microdevices product life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. worldwide rights reserved.
Technology Court, Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com EDS-104211
SDM-09060-B1F 925-960 Power Module
Description Function 2,4,7,9 Flange VGS1 Ground Input VGS2 Output Ground Module Topside ground. Module input. This internally connected ground. apply voltages leads. Care must taken protect against video transients that damage active devices. LDMOS gate bias. VGSTH VDC. Notes LDMOS drain bias. Note Module output. This internally connected ground. apply voltages leads. Care must taken protect against video transients that damage active devices. LDMOS drain bias. Note Baseplate provides electrical ground thermal transfer path device. Proper mounting assures optimal performance highest reliability. Sirenza applications note AN-054 Detailed Installation Instructions Power Modules.
Description LDMOS gate bias. VGSTH VDC. Notes
Simplified Device Schematic
+28V
Note Internal decoupling included bias leads. additional bypass elements required, however some applications require energy storage leads accommodate modulated signals. Note Gate voltage must applied leads simultaneously with after application drain voltage prevent potentially destructive oscillations. Bias voltages should never applied module unless properly terminated both input output. Note required corresponding specific will vary from module module differ between VGS1 VGS2 same module much ±0.10 volts normal die-to-die variation threshold voltage. LDMOS transistors. Note threshold voltage (VGSTH) LDMOS transistors varies with device temperature. External temperature compensation required. Sirenza application notes AN-067 LDMOS Bias Temperature Compensation. Note This module designed have it's leads hand soldered adjacent PCB. maximum soldering iron temperature should exceed 700° soldering iron should direct contact with lead longer than seconds. Refer note AN054 (www.sirenza.com) further installation instructions. http://www.sirenza.com EDS-104211
Balun
Balun
+28V
Absolute Maximum Ratings
Parameters Drain Voltage (VDD) Input Power Load Impedance Continuous Operation Without Damage Control (Gate) Voltage, Output Device Channel Temperature Operating Temperature Range Storage Temperature Range Value +200 +100 Unit VSWR
Operation this device beyond these limits cause permanent damage. reliable continuous operation typical setup values specified table page one. Caution: Sensitive
Appropriate precaution handling, packaging testing devices must observed.
Technology Court Broomfield, 80021
Phone: (800) SMI-MMIC
SDM-09060-B1F 925-960 Power Module
Quality Specifications Parameter Rating MTTF Human Body Model 85oC Leadframe, 200oC Channel Thermal Resistance (Junction-to-Case) Unit Hours Typical 2000
Package Outline Drawing
Note:
Evaluation test fixture information available Sirenza Website, referred SDM-EVAL.
Technology Court Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com EDS-104211

Product Description SDM-09060-B1F power module impedance matched, sing

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