SDM-08060-B1F 869-894 Class Power Amplifier Module Product F

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SDM-08060-B1F 869-894 Class Power Amplifier Module Product F

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SDM-08060-B1F power module impedance matched, single-stage, push-pull Class amplifier module suitable power amplifier driver output stage. drop-in, no-tune solution high power applications requiring high efficiency, excellent linearity, unit-to-unit repeatability.
SDM-08060-B1F
869-894 Class Power Amplifier Module
Product Features
+28V
Vds1
Balun RFin Balun
impedance Output P1dB Volt Operation High Gain: Typical High Efficiency
Application
+28V
Case Flange Ground
Base Station driver Repeater CDMA EDGE
Specifications
Parameter Frequency P1dB Gain Gain Flatness Efficiency Delay Phase Linearity Description: Test Conditions Zout 28.0V, IDQ1=300mA, IDQ2=300mA TFlange Frequency Operation Output Power Compression, Gain CDMA Output (Single Carrier IS-95), 881MHz Peak Peak Gain Variation, 894MHz Drain Efficiency PEP, 880MHz 881MHz Input Return Loss Output Power, 894MHz Order Product, PEP, 880MHz 881MHz Signal Delay from Deviation from Linear Phase (Peak Peak) Unit Min. Typ. Max.
information provided herein believed reliable press time. Sirenza Microdevices assumes responsibility inaccuracies ommisions. Sirenza Microdevices assumes responsibility this information, such information shall entirely user's risk. Prices specifications subject change without notice. patent rights licenses circuits described herein implied granted third party. Sirenza Microdevices does authorize warrant Sirenza Microdevices product life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. worldwide rights reserved.
Technology Court, Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com EDS-104208
SDM-08060-B1F 869-894
Description
2,4,7,9 6,10 Flange Function Ground Input Output Description This gate bias each half amplifier module. Module Topside ground. Module input. This internally connected ground. apply voltages leads. Care must taken protect against video transients that damage active devices. This drain feed amplifier module. Note Module output. This internally connected ground. apply voltages leads. Care must taken protect against video transients that damage active devices. Exposed area bottom side package needs mechanically attached ground plane board optimum thermal performance. mounting instructions recommendation.
Simplified Device Schematic
Case Flange Ground
Absolute Maximum Ratings
Parameters Drain Voltage (VDD) Input Power Load Impedance Continuous Operation Without Damage Control (Gate) Voltage, Output Device Channel Temperature Operating Temperature Range Storage Temperature Range Value +200 +100
Note
Internal decoupling included bias leads. additional bypass elements required, however some applications require energy storage drain leads accommodate time-varying waveforms.
Note
Gate voltage must applied coincident with after application drain voltage prevent potentially destructiveoscillations. Bias voltages should never applied module unless terminated ohms both input output.
Note
corresponding specific will vary from module module vary between sides dual module much ±0.10 volts. This normal die-to-die variation threshold voltage LDMOS transistors.
Unit VSWR
Note
Since gate bias LDMOS transistor changes with device temperature, necessary supply with thermal compensation operation over wide temperature range required.
Operation this device beyond these limits cause permanent damage. reliable continuous operation typical setup values specified table page one.
Note
This module designed have it's leads hand soldered adjacent PCB. maximum soldering iron temperature should exceed 700° soldering iron should direct contact with lead longer than seconds. Refer note AN054 (www.sirenza.com) further installation instructions.
Caution: Sensitive
Appropriate precaution handling, packaging testing devices must observed.
Technology Court, Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com EDS-104208
SDM-08060-B1F 869-894
Quality Specifications
Parameter Unit Typical
Rating MTTF
Human Body Model 85oC Leadframe, 200oC Channel Thermal Resistance (Junction Case)
2000
Typical Performance Curves
Tone Gain, Efficiency, IMDs, Frequency Vdd=28V, Idq=600mA, Pout=60W PEP, Delta
Gain (dB), Efficiency Gain Efficiency IMD3 IMD5 IMD7
Gain (dB), Efficiency
Tone Gain, Efficiency, IMDs Pout Vdd=28V, Idq=600mA, Freq=881 MHz, Delta
Gain Efficiency IMD3 IMD5 IMD7
IMDs (dBc)
IMDs (dBc) (dB)
Frequency (MHz)
Pout PEP)
Gain, Efficiency, Frequency Vdd=28V, Idq=600mA, Pout=60W
Gain, Efficiency Pout Vdd=28V, Idq=600mA, Freq=881
Gain (dB), Efficiency Frequency (MHz) Gain Efficiency
Gain (dB)
Gain Efficiency Pout PEP) Efficiency
(dB) IMDs (dBc)
(dB)
Gain, Efficiency, Supply Voltage Pout=60W, Idq=600mA, Freq=881
Tone Gain, Efficiency, IRL, IMDs Supply Voltage Pout=60W PEP, Idq=600mA, Freq=881 MHz, Delta
Gain (dB), Efficiency (Volts) Gain Efficiency
(dB)
Gain (dB), Efficiency
(Volts)
Gain Efficiency
Technology Court, Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com EDS-104208
SDM-08060-B1F 869-894
Typical Performance Curves (cont'd)
Gain Pout various Vds=28V, Freq=881
Pout varrious Vds=28V, Freq=881 MHz, Delta
Idq=800mA Idq=700mA Gain (dB)
Gain (dB)
Idq=.4A Idq=.5A Idq=.6A Idq=.7A Idq=.8A
Idq=600mA Idq=500mA Idq=400mA
Pout
Pout PEP)
Note:
Evaluation test fixture information available Sirenza Website, referred SDM-EVAL.
Package Outline Drawing
11029
Technology Court, Broomfield, 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-104208

SDM-08060-B1F 869-894 Class Power Amplifier Module Product F

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