METAL GATE SILICON GOLD METALLISED MULTI-PURPOSE SILICON DMOS 7.2
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D2211UK
METAL GATE SILICON
GOLD METALLISED MULTI-PURPOSE SILICON DMOS 7.2V 1GHz SINGLE ENDED
FEATURES
Source Gate Gate Source
DBC1 Package
Source Drain Drain Source
6.47 0.76 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13
SIMPLIFIED AMPLIFIER DESIGN SUITABLE BROAD BAND APPLICATIONS Crss
Tol. .003 .003 .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020
Tol. 0.08 0.08 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51
Inches .255 .030 .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005
NOISE HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
BVDSS BVGSS ID(sat) Tstg Semelab plc. Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
±20V 150°C 200°C
Document Number 2544 Issue
D2211UK
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance 12.5V 10mA 7.2V 1GHz 1MHz 1MHz 1MHz 12.5V 12.5V 0.8A 10mA 0.8A 1.44 20:1
Typ.
Max. Unit
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance Ciss Coss Crss
Pulse Test:
Pulse Duration Duty Cycle
THERMAL DATA
RTHj-case Thermal Resistance Junction Case Max. 2.5°C
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 2544 Issue
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