AUTOMOTIVE MOSFET Logic Level Advanced Process Technology Ultra O
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94804A
AUTOMOTIVE MOSFET
Logic Level Advanced Process Technology Ultra On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed Tjmax
HEXFET® Power MOSFET
IRL1404Z IRL1404ZS IRL1404ZL
VDSS
RDS(on) 3.1mW
Description
Specifically designed Automotive applications, this HEXFET® Power MOSFET utilizes latest processing techniques achieve extremely on-resistance silicon area. Additional features this design 175°C junction operating temperature, fast switching speed improved repetitive avalanche rating These features combine make this design extremely efficient reliable device Automotive applications wide variety other applications.
TO-220AB IRL1404Z
D2Pak IRL1404ZS
TO-262 IRL1404ZL
2CTCOGVGT
7PKVU
2CTCOGVGT
7PKVU
Diu7gq
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2/2/04
IRL1404Z/S/L
6R8SS 6R8SS
Pggyqq
7puu
7puu
Notes: Repetitive rating; pulse width limited max. junction temperature. (See fig. 11). Limited TJmax, starting 25°C, 0.079mH, 25W, 75A, =10V. Part recommended above this value. Pulse width 1.0ms; duty cycle Coss eff. fixed capacitance that gives same charging time Coss while rising from VDSS
Limited TJmax Fig.12a, 12b, typical This value determined from sample failure population. 100% This only applied TO-220AB package. When mounted square (FR-4 G-10 Material).
recommended footprint soldering techniques refer application note #AN-994. tested this value production. repetitive avalanche performance.
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IRL1404Z/S/L
1000
Drain-to-Source Current
6ITTIG
Drain-to-Source Current
1000
6ITTIG
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
Typical Transfer Characteristics
Typical Forward Transconductance Drain Current
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IRL1404Z/S/L
SBIRT98
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRL1404Z/S/L
Maximum Drain Current Case Temperature
Normalized On-Resistance Temperature
(°C/W) (sec) 0.000213 0.185 0.241 0.001234 0.227 0.021750
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL1404Z/S/L
DRIVER
D.U.T
0.01:
12a. Unclamped Inductive Test Circuit
V(BR)DSS
BOTTOM
12b. Unclamped Inductive Waveforms
12c. Maximum Avalanche Energy Drain Current
Charge
13a. Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Current Sampling Resistors
13b. Gate Charge Test Circuit
Threshold Voltage Temperature
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IRL1404Z/S/L
Typical Avalanche Current vs.Pulsewidth
Single Pulse BOTTOM Duty Cycle
Notes Repetitive Avalanche Curves Figures (For further info, AN-1005 www.irf.com) Avalanche failures assumption: Purely thermal phenomenon failure occurs temperature excess jmax. This validated every part type. Safe operation Avalanche allowed long jmax exceeded. Equation below based circuit waveforms shown Figures 12a, 12b. (ave) Average power dissipation single avalanche pulse. Rated breakdown voltage (1.3 factor accounts voltage increase during avalanche). Allowable avalanche current. Allowable rise junction temperature, exceed jmax (assumed 25°C Figure 16). Average time avalanche. Duty cycle avalanche ZthJC(D, Transient thermal resistance, figure (ave) ZthJC 2DT/ (AR)
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Maximum Avalanche Energy Temperature
IRL1404Z/S/L
D.U.T
Driver Gate Drive
P.W.
Period
P.W. Period VGS=10V
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit N-Channel HEXFET® Power MOSFETs
Pulse Width Duty Factor
D.U.T.
18a. Switching Time Test Circuit
td(on) d(off)
18b. Switching Time Waveforms
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IRL1404Z/S/L
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405)
Dimensions shown millimeters (inches)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS GATE DRAIN SOURCE DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
1.40 (.055) 1.15 (.045) 2.54 (.100) NOTES:
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
@Y6HQG@) DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
Production
@Y6HQG@)
DIU@SI6UDPI6G S@8UDAD@S GPBP
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IRL1404Z/S/L
D2Pak Package Outline
Dimensions shown millimeters (inches)
D2Pak Part Marking Information
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
Production
A$"T A$"T
DIU@SI6UDPI6G S@8UDAD@S GPBP
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IRL1404Z/S/L
COLLECTOR
EMITTER
IGBT
GATE
Dimensions shown millimeters (inches)
TO-262 Part Marking Information
TO-262 Package Outline
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IRL1404Z/S/L
D2Pak Tape Reel Information
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
TO-220AB packages recommended Surface Mount Application.
Data specifications subject change without notice. This product been designed qualified Automotive [Q101] market. Qualification Standards found site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 2/04
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