Process Data Sheet PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RE

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Process Data Sheet PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RE

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0.5-µm Intermediate-Profile, High-Current MesFET (IPHC)
Process Data Sheet
PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
0.5-µm amplifier transistors 0.5-µm switch transistors 0.5-µm diodes Device passivation High-Q passives capacitors resistors GaAs resistors metal layers bridges Substrate vias Operation Communications Space Military Power amplifiers Driver amplifiers amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers Digital analog phase shifters Digital analog attenuators Mixers down converters) Multipliers Switches Oscillators
UNDER
0.5-µm Process Cross Section
Applications
General Description
0.5-µm Intermediate-Profile, High-Current MesFET (IPHC) process cost-effective (2-metal-interconnect) depletion-mode ion-implant MesFET process generalpurpose high-power operation through GHz. IPHC process allows active switch, amplifier, diode integration. This process typically used amplifiers, switches, doublers, mixers VCO's various applications. Passives include thick-metal interconnect layers, precision resistors, GaAs resistors, capacitors, throughsubstrate vias. via-under-cap process aids size compaction offers excellent grounds higher frequencies.
West Renner Road Richardson, Texas 75080
Semiconductors Communications, Space Military www.TriQuint.com
Page 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications subject change.
0.5-µm Intermediate-Profile, High-Current MesFET (IPHC)
Process Data Sheet
0.5-µm IPHC MesFET Process Details Element Parameter Typical Value Units FETs Idss mA/mm capacitors Capacitors over vias resistors GaAs resistors Vias Substrate density sheet resistance sheet resistance thickness mS/mm pF/mm V/sq V/sq
Models Available (Noise) Gate Pitch (µm) Gate Fingers Sizes (µm)
Application Examples
Gain Block Amplifier TGA8300-SCC: TriQuint TGA8300-SCC GaAs monolithic distributed amplifier designed multi-octave general-purpose gain block. Power Amplifier TGA8014-SCC: TriQuint TGA8014-SCC two-stage GaAs monolithic medium-power amplifier which provides 11-dB nominal gain with typical power added efficiency output power 1-dB gain compression Watt.
West Renner Road Richardson, Texas 75080
Semiconductors Communications, Space Military www.TriQuint.com
Page 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications subject change.
0.5-µm Intermediate-Profile, High-Current MesFET (IPHC)
Process Data Sheet
Prototyping Development Process Status
Prototype Wafer Option (PWO) Customer-specific masks Customer schedule wafers delivered Backside process included (process control monitor) qualified wafers
0.5-µm Intermediate-Profile, High-Current MesFET (IPHC) fully released qualified Contact TriQuint visit more information quality reliability.
Device libraries circuit elements: FETs Thin-film implanted resistors Capacitors Inductors Agilent design MASC Library
Design Tools
GaAs design classes: Half-day introduction upon request 3-day technical training upon request TriQuint Texas facility
Training
Tiling GDSII stream files including (process control monitor) Design rule checking Layout versus schematic checking Engineering: On-wafer test On-wafer test Thermal analysis Yield enhancement Part qualification Failure analysis Space Qualification
Applications Services
Mask making Wafer thinning Wafer dicing Substrate vias die-sort testing die-sort testing Final visual inspection
Manufacturing Services
West Renner Road Richardson, Texas 75080
Semiconductors Communications, Space Military www.TriQuint.com
Page 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications subject change.

Process Data Sheet PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RE

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