CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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K6F4008R2D Family
CMOS SRAM
512K Super Power Voltage Full CMOS Static
Revision History
Revision History
Initial Draft Finalized Errata correction Change tWP: 50ns 70ns product Change tWHZ: 20ns 70ns product Errata correction Removed Compatible'from Features
Draft Date
March 2000 2000
Remark
Preliminary Final
1.01
October 2001
Final
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer your questions about device. have questions, please contact SAMSUNG branch offices.
Revision 1.01 October 2001
K6F4008R2D Family
FEATURES
CMOS SRAM
GENERAL DESCRIPTION
K6F4008R2D families fabricated SAMSUNGs advanced full CMOS process technology. families support industrial temperature range Chip Scale Package user flexibility system design. families also supports data retention voltage battery back-up operation with data retention current.
512K Super Power Voltage Full CMOS Static
Process Technology: Full CMOS Organization: 512K Power Supply Voltage: 1.65~2.2V Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-FBGA-6.10x8.50
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Range Speed Standby (ISB1, Typ.) 0.5µA Operating (ICC1, Max) Type
K6F4008R2D-F
Industrial(-40~85°C)
1.65~2.2V
701)/85ns
48-FBGA-6.10x8.50
parameter measured with 30pF test load.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
I/O5 I/O6
I/O1 I/O2
select Memory array 1024 rows columns
48(36)-FBGA
I/O7 I/O8
I/O3 I/O4
Data cont
Circuit Column select
Data cont
Name
Function
Name
Function
CS1, Chip Select Inputs A0~A18 Output Enable Input Write Enable Input Address Inputs
I/O1~I/O8 Data Inputs/Outputs Power Ground
Control logic
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
-2Revision 1.01 October 2001
K6F4008R2D Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F4008R2D-FF70 K6F4008R2D-FF85 Function
CMOS SRAM
48-FBGA, 70ns, 1.8/2.0V 48-FBGA, 85ns, 1.8/2.0V
FUNCTIONAL DESCRIPTION
High-Z High-Z High-Z Dout
Mode Deselected Deselected Output Disabled Read Write
Power Standby Standby Active Active Active
means dont care (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT TSTG Ratings -0.2 VCC+0.3V -0.2 2.6V Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions extended periods affect reliability.
Revision 1.01 October 2001
K6F4008R2D Family
RECOMMENDED OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input voltage
Note: TA=-40 85°C, otherwise specified. Overshoot: Vcc+1.0V case pulse width 20ns. Undershoot: -1.0V case pulse width 20ns. Overshoot undershoot sampled, 100% tested.
CMOS SRAM
Symbol
1.65 -0.2
1.8/2.0
Vcc+0.2
Unit
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Operating power supply
Symbol
Test Conditions VIN=Vss CS1=VIH, CS2=VIL OE=VIH WE=VIL, VIO=Vss IIO=0mA, CS1=VIL, CS2=VIH, WE=VIH, VIN=VIH Cycle time=1µs, 100%duty, IIO=0mA, CS10.2V, CS2Vcc-0.2V, VIN0.2V VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, VIN=VIL 0.1mA -0.1mA CS1=VIH, 2=VIL, Other inputs=V CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) CS20.2V(CS2 controlled), Other inputs=0~Vcc
Unit
ICC1
Average operating current ICC2 Output voltage Output high voltage Standby Current(TTL) Standby Current (CMOS) ISB1
Super power product=4µA with special handling.
Revision 1.01 October 2001
K6F4008R2D Family
OPERATING CONDITIONS
TEST CONDITIONS(Test Load Test Input/Output Reference)
Input pulse level: Vcc-0.2V Input rising falling time: Input output reference voltage:0.9V Output load (See right): L=100pF+1TTL CL=30pF+1TTL
CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance R1=3070, =3150 V=1.8V
CHARACTERISTICS(Vcc=1.65~2.2V, Industrial product: TA=-40 85°C)
Speed Bins Parameter List Symbol Read Cycle Time Address Access Time Chip Select Output Output Enable Valid Output Read Chip Select Low-Z Output Output Enable Low-Z Output Chip Disable High-Z Output Output Disable High-Z Output Output Hold from Address Change Write Cycle Time Chip Select Write Address Set-up Time Address Valid Write Write Write Pulse Width Write Recovery Time Write Output High-Z Data Write Time Overlap Data Hold from Write Time Write Output Low-Z
parameter measured with 30pF test load.
70ns
85ns
Units
tOLZ tOHZ tWHZ
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CS1Vcc-0.2V
Unit
Vcc=1.2V, CS1Vcc-0.2V1) data retention waveform
CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) CS20.2V (CS2 controlled). Super power product=2µA with special handling.
Revision 1.01 October 2001
K6F4008R2D Family
TIMING DIAGRAMS
TIMING WAVEFORM READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)
Address Data Previous Data Valid
CMOS SRAM
Data Valid
TIMING WAVEFORM READ CYCLE(2) (WE=VIH)
Address tCO1 tHZ(1,2) tCO2
tOLZ Data Valid tOHZ
Data
NOTES (READ CYCLE)
High-Z
tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision 1.01 October 2001
K6F4008R2D Family
TIMING WAVEFORM WRITE CYCLE(1)
Controlled)
CMOS SRAM
Address tCW(2) tCW(2) tWP(1) tAS(3) Data tWHZ Data Data Undefined Data Valid tWR(4)
TIMING WAVEFORM WRITE CYCLE(2) (CS1
Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision 1.01 October 2001
K6F4008R2D Family
TIMING WAVEFORM WRITE CYCLE(3) (CS2 Controlled)
Address tAS(3) tCW(2) tWP(1) Data Data Valid tCW(2) tWR(4)
CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap high write begins latest transition among goes low, going high going write earliest transition among going high, going going high, measured from begining write write. measured from going going high write. measured from address valid beginning write. measured from write address change. tWR1 applied case write ends going high tWR2 applied case write ends going low.
DATA RETENTION WAVE FORM
controlled
1.65V tSDR Data Retention Mode tRDR
1.4V CS1VCC 0.2V
controlled
1.65V tSDR
Data Retention Mode
tRDR
0.4V 20.2V
Revision 1.01 October 2001
K6F4008R2D Family
PACKAGE DIMENSIONS
BALL FINE PITCH BGA(0.75mm ball pitch)
View Bottom View
CMOS SRAM
Units: millimeters
INDEX MARK 0.50 0.50
C1/2 Detail 0.25/Typ. 0.85/Typ. Notes. Bump counts: 48(8 column) Bump pitch: (x,y)=(0.75 0.75)(typ.) tolerence +/-0.050 unless otherwise specified. Typ: Typical coplanarity: 0.08(Max)
Side View
6.00 8.40 0.30 0.20
0.75 6.10 3.75 8.50 5.25 0.35 1.10 0.85 0.25
6.20 8.60 0.40 1.20 0.30 0.08
Revision 1.01 October 2001
0.30

CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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