REJ03G1491-0100 Rev.1.00 2006 on-resistance leakage current High

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REJ03G1491-0100 Rev.1.00 2006 on-resistance leakage current High

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RJK5013DPK
REJ03G1491-0100 Rev.1.00 2006
on-resistance leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
Gate Drain (Flange) Source
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 IAPNote3 EARNote3 Note2 ch-c Tstg Ratings 0.88 1.25 +150 Unit °C/W
Rev.1.00 2006 page
RJK5013DPK
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) 0.385 1450 ±0.1 0.465 Unit Test conditions Note4 35.7 Note4 diF/dt A/µs
Rev.1.00 2006 page
RJK5013DPK
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P TO-3PV MASS[Typ.] 5.0g
Unit:
15.6
14.9
19.9
18.0
5.45
5.45
Ordering Information
Part Name RJK5013DPK-00-T0 Quantity (Tube) Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.1.00 2006 page
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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REJ03G1491-0100 Rev.1.00 2006 on-resistance leakage current High

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