N-Channel Power MOSFET High-Speed Switching REJ03G1594-0200 Rev.2

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N-Channel Power MOSFET High-Speed Switching REJ03G1594-0200 Rev.2

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RJK1536DPN
N-Channel Power MOSFET High-Speed Switching
REJ03G1594-0200 Rev.2.00 2008
VDSS RDS(on) (Max)
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
Gate Drain Source Drain
Application
Motor control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: Value 25°C STch 25°C, 150°C, Symbol VDSS VGSS (pulse) (pulse) Note2 Note1 ch-c Tstg Ratings +150 Unit °C/W
REJ03G1594-0200 Rev.2.00 2008 Page
RJK1536DPN
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state voltage Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) RDS(on) Ciss Coss Crss td(on) td(off) 0.60 5000 ±0.1 0.75 Unit Test conditions Note3 Note3 Note3 diF/dt A/µs
REJ03G1594-0200 Rev.2.00 2008 Page
RJK1536DPN
Main Characteristics
Power Temperature Derating
1000
Maximum Safe Operation Area
25°C
Channel Dissipation
Drain Current
Operation 25°C)
(1shot)
0.01
Operation this area limited RDS(on)
1000
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
Pulse Test
75°C
25°C -25°C
Drain Source Voltage
Gate Source Voltage
Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Drain Source State Resistance Gate Source Voltage
Drain Source State Resistance RDS(on)
Pulse Test
Pulse Test
Gate Source Voltage
Drain Current
REJ03G1594-0200 Rev.2.00 2008 Page
RJK1536DPN
Drain Source State Resistance Temperature
Pulse Test
Forward Transfer Admittance Drain Current
Forward Transfer Admittance |yfs|
Drain Source State Resistance RDS(on)
1000
-25°C
25°C 75°C
Pulse Test
Case Temperature (°C)
Drain Current
Body-Drain Diode Reverse Recovery Time
Typical Capacitance Drain Source Voltage
10000
Ciss
Reverse Recovery Time (ns)
1000
Capacitance (pF)
1000
Coss Crss
25°C
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Drain Source Voltage
Switching Time (ns)
Gate Source Voltage
1000
duty
td(off)
td(on)
Gate Charge (nC)
Drain Current
REJ03G1594-0200 Rev.2.00 2008 Page
RJK1536DPN
Reverse Drain Current Source Drain Voltage
Avalanche Current vs.Case Temperature
Avalanche Current
Pulse Test
Reverse Drain Current
Source Drain Voltage
Case Temperature (°C)
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
0.05
0.02
c(t) 1.00°C/W, 25°C
0.03
0.01
Pulse Width
Switching Time Test Circuit
Monitor D.U.T. td(on) Vout Monitor Vout
Waveform
td(off)
REJ03G1594-0200 Rev.2.00 2008 Page
RJK1536DPN
Package Dimensions
Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB TO-220ABV MASS[Typ.] 1.8g
Unit:
11.5
2.79
10.16
+0.2 -0.1
+0.1 -0.08
4.44 1.26 0.15
18.5
15.0
1.27
0.76
14.0
2.54
2.54
Ordering Information
Part RJK1536DPN-00-02 Quantity (Sack) Shipping Container
REJ03G1594-0200 Rev.2.00 2008 Page
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 3518-3399 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
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2008. Renesas Technology Corp., rights reserved. Printed Japan.
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N-Channel Power MOSFET High-Speed Switching REJ03G1594-0200 Rev.2

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