Silicon Channel Power with Schottky Barrier Diode High Speed Power Swi

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Silicon Channel Power with Schottky Barrier Diode High Speed Power Swi

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RJK0384DPA
Silicon Channel Power with Schottky Barrier Diode High Speed Power Switching
REJ03G1724-0101 Preliminary Rev.1.01 2008
on-resistance Capable gate drive High density mounting Pb-free Halogen-free
Outline
WPAK
S1/D2
MOS1
MOS2
Absolute Maximum Ratings
25°C)
Ratings Item Drain source voltage Gate source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)Note1 Note Note3 Tstg
Note
MOS1 12.1 +150
MOS2 32.4 +150
Unit
Notes: duty cycle Value 25°C, Tc=25°C
REJ03G1724-0101 Rev.1.01 2008 Page
RJK0384DPA
Electrical Characteristics
MOS1 25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 1010 0.84 ±0.1 11.1 16.8 1.10 Unit Test Conditions Note4 Note4 Note4 1MHz 1.33 Note4 diF/ A/µs
REJ03G1724-0101 Rev.1.01 2008 Page
RJK0384DPA MOS2 25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Schottky Barrier diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 2400 0.39 ±0.1 Unit Test Conditions Note4 Note4 Note4 1MHz 0.47 Note4 diF/ A/µs
REJ03G1724-0101 Rev.1.01 2008 Page
RJK0384DPA
Package Dimensions
Package Name WPAK-DV(2) JEITA Package Code RENESAS Code PWSN0008DD-A Previous Code WPAK-DV(2) MASS[Typ.] 0.075g
0.8Max
+0.1 -0.3
+0.1 -0.2
(0.06) (0.06)
(0.50)
(1.25) (0.40) 0.45 (0.30) (0.30)
(0.30)
(3.20)
(1.30) (0.30)
0.15
0.635Max
1.27Typ
0.2Typ
4.21Typ
0.05Max 0Min Stand-off
Ordering Information
Part RJK0384DPA-00-J0 Quantity 2500 Taping Shipping Container
REJ03G1724-0101 Rev.1.01 2008 Page
0.15
(0.55)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Silicon Channel Power with Schottky Barrier Diode High Speed Power Swi

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