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5120 8-Bit Line Memory (FIFO) REJ03F0251-0200 Rev.2.00 2007
Top Searches for this datasheetM66257FP 5120 8-Bit Line Memory (FIFO) REJ03F0251-0200 Rev.2.00 2007 M66257FP high-speed line memory with FIFO (First First Out) structure 5120-word 8-bit double configuration which uses high-performance silicon gate CMOS process technology. allows simultaneous output 1-line delay data 2-line delay data, most suitable data correction over multiple lines. separate clock, enable reset signals write read, most suitable buffer memory between devices with different data processing throughput. Features Memory configuration: 5120 words bits (dynamic memory) High-speed cycle: (Min) High-speed access: (Max) Output hold: (Min) Fully independent, asynchronous write read operations Output: states 1-line delay Q07: Q17: 2-line delay Application Digital photocopiers, high-speed facsimile, laser beam printers. Block Diagram Data input Data output Data output Input buffer Output buffer Read address counter Write address counter Read control circuit Write control circuit Write enable input WRES Write reset input Write clock input Read enable input Memory array 5120-word 8-bit configuration 1-line delay data only memory/ 2-line delay data only memory RRES Read reset input Read clock input REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Arrangement M66257FP Data output RRES WRES Read enable input Read reset input Read clock input Write enable input Write reset input Write clock input Data input (Top view) Outline: PRSP0036GA-A (36P2R-A) REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Absolute Maximum Ratings 70°C, unless otherwise noted) Item Supply voltage Input voltage Output voltage Power dissipation Storage temperature Symbol Tstg Ratings -0.5 +7.0 -0.5 -0.5 Unit Conditions value based 25°C Recommended Operating Conditions Item Supply voltage Supply voltage Operating ambient temperature Symbol Topr Unit Electrical Characteristics 70°C, 10%, unless otherwise noted) Item input voltage input voltage output voltage output voltage input current Symbol 0.55 Unit Test Conditions WRES, WCK, RRES, RCK, WRES, WCK, RRES, RCK, input current -1.0 state output current state output current Operating mean current dissipation Input capacitance state output capacitance IOZH IOZL -5.0 VCC, GND, Output open tWCK, tRCK REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Function When write enable input "L", contents data inputs written into 1-line delay data only memory synchronization with rise edge write clock input WCK. this time, write address counter 1-line delay data only memory also incremented simultaneously. write functions given below also performed synchronization with rise edge WCK. When "H", write operation 1-line delay data only memory inhibited write address counter 1-line delay data only memory stopped. When write reset input WRES "L", write address counter 1-line delay data only memory initialized. When read enable input "L", contents 1-line delay data only memory output data outputs those 2-line delay data only memory data outputs synchronization with rise read clock input RCK. this time, read address counters 1-line 2-line delay data only memories also incremented simultaneously. Moreover, data written into 2-line delay data only memory synchronization with rise edge RCK. this time, write address 2-line delay data only memory incremented. read functions given below also performed synchronization with rise edge RCK. When "H", read operation from both 1-line delay data only memory 2-line delay data only memory inhibited read address counter each memory stopped. outputs high impedance state. Moreover, write operation 2-line delay data only memory inhibited write address counter 2-line delay data only memory stopped. When read reset input RRES "L", read address counter 1-line delay data only memory, write address counter read address counter 2-line delay data only memory initialized. REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Switching Characteristics 70°C, 10%, unless otherwise noted) Item Access time Output hold time Output enable time Output disable time Symbol tOEN tODIS Unit Timing Conditions 70°C, 10%, unless otherwise noted) Item Write clock (WCK) cycle Write clock (WCK) pulse width Write clock (WCK) pulse width Read clock (RCK) cycle Read clock (RCK) pulse width Read clock (RCK) pulse width Input data setup time Input data hold time Reset setup time Reset hold time Reset nonselect setup time Reset nonselect hold time setup time hold time nonselect setup time nonselect hold time setup time hold time nonselect setup time nonselect hold time Input pulse rise/fall time Data hold time* Symbol tWCK tWCKH tWCKL tRCK tRCKH tRCKL tRESS tRESH tNRESS tNRESH tWES tWEH tNWES tNWEH tRES tREH tNRES tNREH Unit Notes: Reset after power turned 1-line access, following should satisfied: level period 5120 tWCK WRES level period level period 5120 tRCK RRES level period REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Test Circuit tAC, tOEN, tODIS Input pulse level: Input pulse rise/fall time: Decision voltage input: Decision voltage output: (However, tODIS (LZ) output amplitude tODIS (HZ) that decision) load capacitance includes floating capacitance connection input capacitance probe. Parameter tODIS (LZ) tODIS (HZ) tOEN (ZL) tOEN (ZH) Closed Open Closed Open Open Closed Open Closed tODIS/tOEN Test Condition tODIS (HZ) tODIS (LZ) tOEN (ZL) tOEN (ZH) REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Operating Timing Write Cycle Cycle Cycle Cycle Disable cycle Cycle Cycle tWCK tWCKH tWCKL tWEH tNWES tNWEH tWES WRES Write Reset Cycle Cycle Cycle Reset cycle Cycle Cycle Cycle tWCK tNRESH tRESS tRESH tNRESS WRES REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Read Cycle Cycle Cycle Cycle Disable cycle Cycle Cycle tRCK tRCKH tRCKL tREH tNRES tNREH tRES tODIS tOEN HIGH-Z RRES Read Reset Cycle Cycle Cycle Reset cycle Cycle Cycle Cycle tRCK tNRESH tRESS tRESH tNRESS RRES REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Note Stop cycle cycle cycle Disable cycle tWCK tNWES Period writing data into memory Period writing data into memory WRES Input data cycle read rising edge after cycle. Writing operation starts period cycle ends rising edge after cycle. stop reading write data cycle, input rising edge cycle. When cycle next cycle disable cycle, input cycle required after disable cycle well. REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Shortest Read Data Written Cycle (Cycle read side should started after cycle write side) When start cycle read side earlier than cycle write side, output cycle becomes invalid. figure shown below, read cycle invalid. Cycle Cycle Cycle Cycle Cycle Cycle Cycle Invalid Longest Read Data Written Cycle 1-line Delay (Cycle <1>* read side should started when cycle <2>* write started) Output cycle <1>* read until start reading side cycle start writing side cycle <2>* overlap each other. Cycle <1>* Cycle <2>* Cycle <2>* <1>* <1>* <2>* <2>* <2>* Cycle <0>* Cycle <1>* Cycle <1>* <0>* <0>* <1>* <1>* <1>* Note: <0>*, <1>* <2>* indicates line value. REJ03F0251-0200 Rev.2.00 2007 Page M66257FP Application Example Laplacian Filter Circuit Correction Resolution Secondary Scanning Direction Line image data M66257 Line image data Adder 1-line delay Corrected image data Subtractor 2-line delay Secondary scanning direction Primary scanning direction Line Line Line Laplacian coefficient REJ03F0251-0200 Rev.2.00 2007 Page Adder Line image data M66257FP Package Dimensions JEITA Package Code P-SSOP36-8.4x15-0.80 RENESAS Code PRSP0036GA-A Previous Code 36P2R-A MASS[Typ.] 0.5g NOTE) DIMENSIONS "*1" "*2" INCLUDE MOLD FLASH. DIMENSION "*3" DOES INCLUDE TRIM OFFSET. Index mark Reference Symbol Dimension Millimeters Detail 14.8 15.0 15.2 0.05 0.35 0.13 0.15 11.63 11.93 12.23 0.65 0.95 0.15 REJ03F0251-0200 Rev.2.00 2007 Page Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: This document provided reference purposes only that Renesas customers select appropriate Renesas products their use. 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