Silicon Channel Power High Speed Power Switching REJ03G1571-0100

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Silicon Channel Power High Speed Power Switching REJ03G1571-0100

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RJM0306JSP
Silicon Channel Power High Speed Power Switching
REJ03G1571-0100 Rev.1.00 2007
elements each channels incorporated (suitable H-bridge circuit) High density mounting on-resistance Capable gate drive High temperature leakage guarantee Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV>
MOS4 MOS3 MOS1 MOS2 Element MOS1 (Nch) MOS4 (Pch) MOS1 (Nch) MOS1 (Nch) MOS2 (Nch) MOS2 (Nch) MOS2 (Nch) MOS3 (Pch) MOS3 (Pch) MOS3 (Pch) MOS4 (Pch) MOS4 (Pch) Drain Gate Source Gate Source Gate Electrode Drain Gate
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: Symbol VDSS VGSS (pulse)Note IAPNote EARNote PchNote PchNote Tstg Value MOS1, (Nch) MOS3, (Pch) -3.5 -3.5 1.22 1.22 +150 Unit
duty cycle Drive operation: When using glass epoxy board (FR4 mm), Drive operation: When using glass epoxy board (FR4 mm), Value 25°C,
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP
Electrical Characteristics
MOS1, (Nch) 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Static drain source state resistance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IDSS IGSS VGS(off) RDS(on) RDS(on) RDS(on) Ciss Coss Crss td(on) td(off) 0.88 1.15 Unit Test Conditions ±100 125°C ANote5, ANote5, ANote5, 0Note5 3.5A, diF/dt A/µs
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP MOS3, (Pch) 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Static drain source state resistance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IDSS IGSS VGS(off) RDS(on) RDS(on) RDS(on) Ciss Coss Crss td(on) td(off) -1.0 -0.92 -2.5 -1.2 Unit Test Conditions ±100 125°C -2.0 ANote5, -2.0 ANote5, -4.5 -2.0 ANote5, -4.0 -3.5 -2.0 -3.5 0Note5 -3.5 diF/dt A/µs
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP
Main Characteristics
MOS1, (Nch)
Maximum Safe Operation Area
Typical Output Characteristics
Drain Current
Drain Current
Operation
this area limited (on)
ote6
0.01 0.001
25°C shot Pulse
Pulse Test
Drain Source Voltage
Note When using glass epoxy board (FR4
Drain Source Voltage Static Drain Source State Resistance Drain Current
Drain Source State Resistance (on)
1000
Typical Transfer Characteristics
0.01 0.001 0.0001 0.00001
Pulse Test
Drain Current
150°C 25°C -40°C
Pulse Test
Gate Source Voltage
Static Drain Source State Resistance Temperature
Pulse Test 1000
Drain Current
Typical Capacitance Drain Source Voltage
Ciss
Static Drain Source State Resistance (on)
Capacitance (pF)
Coss
Crss
Case Temperature (°C)
Drain Source Voltage
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP MOS1, (Nch)
Reverse Drain Current Source Drain Voltage
Gate Source Voltage
Dynamic Input Characteristics
Drain Source Voltage
Reverse Drain Current
Pulse Test
Gate Charge (nc)
Maximum Avalanche Energy Channel Temperature Derating
Repetitive Avalanche Energy (mJ)
Source Drain Voltage
duty
Channel Temperature (°C)
Avalanche Test Circuit
Monitor Monitor
Avalanche Waveform
IAP2 VDSS VDSS
(BR)DSS
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP MOS1, (Nch)
Switching Time Test Circuit
Monitor D.U.T.
Switching Time Waveform
Vout Monitor td(on) td(off) Vout
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP MOS3, (Pch)
Maximum Safe Operation Area
-100
Typical Output Characteristics
-4.5 Pulse Test -5.0 -4.0
Drain Current
-0.1 -0.01
Drain Current
-3.0 -2.5
Operation this area limited (on) 25°C shot Pulse
ote6
-0.001 -0.1
-100
Drain Source Voltage
Note When using glass epoxy board (FR4
Drain Source Voltage Static Drain Source State Resistance Drain Current
Drain Source State Resistance (on)
10000
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
-0.1 -0.01 -0.001
1000
-4.5
150°C 25°C -40°C
-0.0001
-0.00001
-0.1
Gate Source Voltage Static Drain Source State Resistance Temperature
1000
Drain Current
Typical Capacitance Drain Source Voltage
Static Drain Source State Resistance (on)
-4.5
Capacitance (pF)
Ciss
Coss Crss
Pulse Test
Case Temperature (°C)
Drain Source Voltage
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP MOS3, (Pch)
Reverse Drain Current Source Drain Voltage
Gate Source Voltage
Dynamic Input Characteristics
Drain Source Voltage
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0
-3.5
Gate Charge (nc)
Source Drain Voltage
Maximum Avalanche Energy Channel Temperature Derating
Repetitive Avalanche Energy (mJ)
duty
Channel Temperature (°C)
Avalanche Test Circuit
Monitor Monitor
Avalanche Waveform
VDSS VDSS
IAP2
V(BR)DSS
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP MOS3, (Pch)
Switching Time Test Circuit
Monitor D.U.T. Vout td(on) Vout Monitor
Switching Time Waveform
td(off)
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP Common
Power Temperature Derating
Test Condition: When using glass epoxy board (FR4 mm),
Channel Dissipation
Case Temperature
(°C)
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
0.05 0.02
0.01
f(t) 125°C/W, 25°C When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
10000
Pulse Width
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
0.05
0.02
0.01
0.01
f(t) 210°C/W, 25°C When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
10000
Pulse Width
REJ03G1571-0100 Rev.1.00 2007 Page
RJM0306JSP
Package Dimensions
Package Name SOP-8
JEITA Package Code P-SOP8-3.95 4.9-1.27
RENESAS Code PRSP0008DD-D
Previous Code FP-8DAV
MASS[Typ.] 0.085g
Index mark
Terminal cross section
(Ni/Pd/Au plating)
NOTE) DIMENSIONS "*1(Nom)" "*2" INCLUDE MOLD FLASH. DIMENSION "*3" DOES INCLUDE TRIM OFFSET.
Reference Dimension Millimeters Symbol
4.90 3.95
0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25
Detail
5.80 6.10 6.20 1.27 0.25 0.75 0.40 0.60 1.27 1.08
Ordering Information
Part RJM0306JSP-00-J0 2500 Quantity Taping Shipping Container
REJ03G1571-0100 Rev.1.00 2007 Page
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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2007. Renesas Technology Corp., rights reserved. Printed Japan.
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Silicon Channel Power High Speed Power Switching REJ03G1571-0100

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