AO4421 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4421 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4421 P-Channel Enhancement Mode Field Effect Transistor
AO4421 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch applications. Standard Product AO4412 Pb-free (meets ROHS Sony specifications). AO4421L Green Product ordering option. AO4421 AO4421L electrically identical.
-60V -6.2 (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -6.2
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4421, AO4421L
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6.2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-48V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6.2A TJ=125°C -0.74 -4.2 2900 ±100 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz
2417 46.5
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-10V, VDS=-30V, ID=-6.2A
22.7 12.7
VGS=-10V, VDS=-30V, RL=4.7, RGEN=3
IF=-6.2A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AO4421, AO4421L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: P-CHANNEL
-10V -VDS (Volts) On-Region Characteristics Normalized On-Resistance VGS=-4.5V RDS(ON) 2.00 1.80 1.60 1.40 1.20 1.00 0.80 Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 ID=-6.2A 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 1.0E-05 1.0E-06 -VGS (Volts) Figure On-Resistance Gate-Source Voltage -VSD (Volts) Figure Body-Diode Characteristics 125°C VGS=-4.5V ID=-5A VGS=-10V ID=-6.2A VGS=-3V -4.5V -3.5V -ID(A) 125°C 25°C -VGS(Volts) Figure Transfer Characteristics VDS=-5V
VGS=-10V
Figure On-Resistance Drain Current Gate Voltage RDS(ON)
Alpha Omega Semiconductor, Ltd.
AO4421, AO4421L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: P-CHANNEL
-VGS (Volts) (nC) Figure Gate-Charge Characteristics -VDS (Volts) Figure Capacitance Characteristics VDS=-30V ID=-6.2A Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss Crss Ciss
100.0 TJ(Max)=150°C, TA=25°C RDS(ON) limited 0.1s 100µs 10ms 10µs Power
TJ(Max)=150°C TA=25°C
(Amps)
10.0
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.

AO4421 uses advanced trench technology provide excellent RDS(ON), ultr

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