CMOS SRAM Super Power Voltage Full CMOS Static Revision Hist

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CMOS SRAM Super Power Voltage Full CMOS Static Revision Hist

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K6F1016U4C Family
CMOS SRAM
Super Power Voltage Full CMOS Static
Revision History
Revision History
Initial Draft Finalize Changed 48-TBGA vertical dimension E1(Typical) 0.55mm 0.58mm E2(Typical) 0.35mm 0.32mm Revised Added Lead Free product(K6F1016U4C-AF55/AF70) PRODUCT LIST
Draft Date
2001
Remark
Preliminary
September 2001 Final
September 2003 Final
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer your questions about device. have questions, please contact SAMSUNG branch offices.
Revision September 2003
K6F1016U4C Family
CMOS SRAM
Super Power Voltage Full CMOS Static
FEATURES
GENERAL DESCRIPTION
K6F1016U4C families fabricated SAMSUNGs advanced full CMOS process technology. families support industrial temperature range ball Chip Scale Package user flexibility system design. families also support data retention voltage battery back-up operation with data retention current.
Process Technology: Full CMOS Organization: Power Supply Voltage: 2.7~3.3V Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00(Leaded Lead Free)
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Range Speed Standby (ISB1, Typ.) 0.5µA2) Operating (ICC1, Max) Type
K6F1016U4C-F
Industrial(-40~85°C)
2.7~3.3V
551)/70ns
48-TBGA-6.00x7.00
parameter measured with 30pF test load. Typical values measured VCC=3.0V, TA=25°C 100% tested.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit. Addresses Memory array 1024 rows columns
I/O9
I/O1 select
I/O10
I/O11
I/O2
I/O3
I/O12
I/O4
I/O13
I/O5
I/O1~I/O8
Data cont Data cont Data cont
Circuit Column select
I/O15
I/O14
I/O6
I/O7
I/O9~I/O16
I/O16
I/O8
Column Addresses
48-TBGA: View Name A0~A15 Function Chip Select Input Output Enable Input Write Enable Input Address Inputs Name Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8)
Control Logic
I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
-2Revision September 2003
K6F1016U4C Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F1016U4C-EF55 K6F1016U4C-EF70 K6F1016U4C-AF55 K6F1016U4C-AF70 Function
CMOS SRAM
48-TBGA(Leaded), 55ns, 3.0V 48-TBGA(Leaded), 70ns, 3.0V 48-TBGA(Lead Free), 55ns, 3.0V 48-TBGA(Lead Free), 70ns, 3.0V
FUNCTIONAL DESCRIPTION
I/O1~8 High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
I/O9~16 High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z
Mode Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Active Active Active Active Active Active Active Active
means dont care. (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT TSTG Ratings -0.2 VCC+0.3V -0.2 3.6V Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions longer than seconds affect reliability.
Revision September 2003
K6F1016U4C Family
RECOMMENDED OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input voltage
Note: TA=-40 85°C, otherwise specified. Overshoot: Vcc+2.0V case pulse width 20ns. Undershoot: -2.0V case pulse width 20ns. Overshoot undershoot sampled, 100% tested.
CMOS SRAM
Symbol -0.2
Vcc+0.22)
Unit
CAPACITANCE1)(f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current
Symbol
Test Conditions VIN=Vss CS=VIH OE=VIH WE=VIL LB=UB=VIH, VIO=Vss Cycle time=1µs, 100%duty, IIO=0mA, CS0.2V, LB0.2V or/and UB0.2V, VIN0.2V VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, LB=VIL UB=VIL, VIN=VIL IOL=2.1mA =-1.0mA Other input CSVcc-0.2V(CS controlled) LB=UBVcc-0.2V, CS0.2V(LB/UB controlled) 70ns 55ns
Typ1) Unit
ICC1
Average operating current ICC2 Output voltage Output high voltage Standby Current (CMOS) ISB1
Typical values measured VCC=3.0V, TA=25°C 100% tested.
Revision September 2003
K6F1016U4C Family
OPERATING CONDITIONS
TEST CONDITIONS (Test Load Input/Output Reference)
Input pulse level: 2.2V Input rising falling time: Input output reference voltage: 1.5V Output load (See right): 100pF+1TTL CL=30pF+1TTL
CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance R1=3070, R2=3150 V=2.8V
CHARACTERISTICS (Vcc=2.7~3.3V, Industrial product:TA=-40 85°C)
Speed Bins Parameter List Symbol Read Cycle Time Address Access Time Chip Select Output Output Enable Valid Output Access Time Read Chip Select Low-Z Output Enable Low-Z Output Output Enable Low-Z Output Chip Disable High-Z Output Disable High-Z Output Output Disable High-Z Output Output Hold from Address Change Write Cycle Time Chip Select Write Address Set-up Time Address Valid Write Valid Write Write Write Pulse Width Write Recovery Time Write Output High-Z Data Write Time Overlap Data Hold from Write Time Write Output Low-Z
parameter measured with 30pF test load.
55ns
70ns
Units
tBLZ tOLZ tBHZ tOHZ tWHZ
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CSVcc-0.2V1), VIN0V Vcc=1.5V, CSVcc-0.2V VIN0
Typ2)
Unit
data retention waveform
CSVcc-0.2V(CS controlled) LB=UBVcc-0.2V, CS0.2V(LB/UB controlled) Typical value measured TA=25°C 100% tested.
Revision September 2003
K6F1016U4C Family
TIMING DIAGRAMS
CMOS SRAM
TIMING WAVEFORM READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, or/and LB=VIL)
Address Data Previous Data Valid Data Valid
TIMING WAVEFORM READ CYCLE(2) (WE=VIH)
Address
tBHZ tOLZ tBLZ Data Valid tOHZ
Data
High-Z
NOTES (READ CYCLE) tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision September 2003
K6F1016U4C Family
TIMING WAVEFORM WRITE CYCLE(1) Controlled)
Address tCW(2) tWP(1) tAS(3) Data High-Z tWHZ Data Data Undefined Data Valid tWR(4)
CMOS SRAM
High-Z
TIMING WAVEFORM WRITE CYCLE(2) Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision September 2003
K6F1016U4C Family
TIMING WAVEFORM WRITE CYCLE(3) (UB, Controlled)
Address tCW(2) tAS(3) tWP(1) Data Data Valid tWR(4)
CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap(tWP) write begins when goes goes with asserting single byte operation simultaneously asserting double byte operation. write ends earliest transition when goes high goes high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends going high.
DATA RETENTION WAVE FORM
2.7V tSDR Data Retention Mode tRDR
2.2V CSVCC 0.2V LB=UBVcc-0.2V
LB/UB
Revision September 2003
K6F1016U4C Family
PACKAGE OUTLINE
BALL TAPE BALL GRID ARRAY(0.75mm ball pitch)
View Bottom View
CMOS SRAM
Units: millimeters
C1/2 Detail 0.32/Typ. 0.58/Typ. Notes. Bump counts: 48(8 column) Bump pitch: (x,y)=(0.75 0.75)(typ.) tolerence +/-0.050 unless otherwise specified. Typ: Typical coplanarity: 0.08(Max)
Side View
5.90 6.90 0.40 0.27
0.75 6.00 3.75 7.00 5.25 0.45 0.90 0.58 0.32
6.10 7.10 0.50 1.00 0.37 0.08
Revision September 2003

CMOS SRAM Super Power Voltage Full CMOS Static Revision Hist

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