formerly General Semiconductor Surface Mount Glass Passivated Rec

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formerly General Semiconductor Surface Mount Glass Passivated Rec

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GF1A thru GF1M
formerly General Semiconductor
Surface Mount Glass Passivated Rectifier
DO-214BA (GF1)
0.066 (1.68) 0.040 (1.02)
ted* aten
Reverse Voltage 1000V Forward Current 1.0A
Mounting Layout
0.066 MIN. (1.68 MIN.) 0.094 MAX. (2.38 MAX.)
Dimensions inches (millimeters)
0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17)
Glass-plastic encapsulation technique covered Patent 3,996,602, brazen-lead assembly Patent 3,930,306 lead forming Patent 5,151,846
0.052 MIN. (1.32 MIN.) 0.220 (5.58)
0.118 (3.00) 0.100 (2.54)
0.108 (2.74) 0.098 (2.49)
Features
Plastic package Underwriters Laboratories Flammability Classification 94V-0 Ideal surface mount automotive applications High temperature metallurgically bonded construction Cavity-free glass passivated junction Capable meeting environmental standards MIL-S-19500 Built-in strain relief Easy pick place High temperature soldering guaranteed: 450°C/5 seconds terminals. Complete device submersible temperature 265°C seconds solder bath
0.060 (1.52) 0.030 (0.76)
0.006 (0.152) TYP. 0.226 (5.74) 0.196 (4.98)
0.114 (2.90) 0.094 (2.39)
Mechanical Data
Case: JEDEC DO-214BA, molded plastic over glass body Terminals: Solder plated, solderable MIL-STD-750, Method 2026 Polarity: Color band denotes cathode Mounting Position: Weight: 0.0048 0.120
Maximum Ratings Thermal Characteristics Ratings 25°C ambient temperature unless otherwise specified.
Parameter Device marking code Maximum repetitive peak reverse voltage Maximum voltage Maximum blocking voltage Maximum average forward rectified current 125°C Peak forward surge current 8.3ms single half sine-wave superimposed rated load (JEDEC Method) Typical thermal resistance(1) Operating junction storage temperature range VRRM VRMS IF(AV) IFSM TJ,TSTG Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit +175 1000 1000 °C/W
Electrical Characteristics
Parameter Maximum reverse current rated blocking voltage Typical reverse recovery time 0.5A, 1.0A, 0.25 Typical junction capacitance 4.0V, 1MHz
25°C unless otherwise noted)
Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit 1.10 1.20 25°C 125°C
Maximum instantaneous forward voltage 1.0A
Note: Thermal resistance from junction ambient from junction lead, P.C.B. mounted 0.2" (5.0 5.0mm) copper areas
Document Number 88617 08-Jul-02
www.vishay.com
GF1A thru GF1M
formerly General Semiconductor
Ratings Characteristic Curves 25°C unless otherwise noted)
Fig. Forward Current Derating Curve
Fig. Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current
max. 8.3ms Single Half Sine-Wave (JEDEC Method)
Average Forward Rectified Current
Resistive Inductive Load
P.C.B. Mounted 0.2" (5.0 5.0mm) Copper Areas
Lead Temperature (°C)
Number Cycles
Fig. Typical Instantaneous Forward Characteristics
Instantaneous Forward Current
Fig. Typical Reverse Characteristics
Instantaneous Reverse Leakage Current (mA)
100°C
Pulse Width 300µs Duty Cycle 25°C
25°C 0.01
0.01
Instantaneous Forward Voltage
Percent Rated Peak Reverse Voltage
Fig. Typical Junction Capacitance
Fig. Typical Transient Thermal Impedance
Transient Thermal Impedance (°C/W)
Junction Capacitance
25°C Vsig 50mVp-p
Mounted 0.27" (5.0 7.0mm) Copper Areas
0.01
Reverse Voltage www.vishay.com
Pulse Duration (sec.) Document Number 88617 08-Jul-02

formerly General Semiconductor Surface Mount Glass Passivated Rec

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