formerly General Semiconductor Surface Mount Ultrafast Plastic Re

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formerly General Semiconductor Surface Mount Ultrafast Plastic Re

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ES1A thru ES1D
formerly General Semiconductor
Surface Mount Ultrafast Plastic Rectifiers
DO-214AC (SMA)
Cathode Band
Reverse Voltage Forward Current Reverse Recovery Time
Mounting Layout
0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54)
0.066 MIN. (1.68 MIN.)
0.094 MAX. (2.38 MAX.)
0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
0.052 MIN. (1.32 MIN.) 0.220 (5.58)
0.090 (2.29) 0.078 (1.98)
Dimensions inches (millimeters)
0.060 (1.52) 0.030 (0.76) 0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93)
Features
Plastic package Underwriters Laboratories Flammability Classification 94V-0 surface mount applications Glass passivated chip junctions profile package Easy pick place Ultrafast recovery times high efficiency forward voltage, power loss Built-in strain relief, ideal automated placement High temperature soldering guaranteed: 250°C/10 seconds terminals
Mechanical Data
Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable MIL-STD-750, Method 2026 Polarity: Color band denotes cathode Weight: 0.002 oz., 0.064
Maximum Ratings Thermal Characteristics Ratings 25°C ambient temperature unless otherwise specified.
Parameter Device marking code Maximum repetitive peak reverse voltage Maximum voltage Maximum blocking voltage Maximum average forward rectified current 120°C Peak forward surge current 8.3ms single half sine-wave superimposed rated load (JEDEC Method) Typical thermal resistance Operating junction storage temperature range Symbol VRRM VRMS IF(AV) IFSM TSTG ES1A ES1B +150 ES1C ES1D Unit °C/W
Electrical Characteristics
Ratings 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage 0.6A(2) 1.0A Maximum reverse current TA=25°C rated blocking voltage TA=100°C Max. reverse recovery time 0.5A, 1.0A, 0.25A Maximum reverse recovery time TJ=25°C 0.6A, 30V, di/dt 50A/µs, =10% TJ=100°C Maximum stored chargeTJ=25°C TA=25°C 0.6A, 30V, di/dt 50A/µs, =10% TA=100°C Typical junction capacitance 4.0V, 1MHz
Notes: Units mounted P.C.B. 5.0mm (0.013mm thick) land areas Pulse test: 300µs pulse width, duty cycle
0.865 0.920
Document Number 88586 16-Oct-02
www.vishay.com
ES1A thru ES1D
formerly General Semiconductor
Ratings Characteristic Curves 25°C unless otherwise noted)
Fig. Maximum Forward Current Derating Curve
Fig. Maximum Non-Repetitive Peak Forward Surge Current
Average Forward Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave (JEDEC Method) 120°C
Resistive Inductive Load P.C.B. Mounted 0.2" (5.0 5.0mm) Copper Areas
Lead Temperature (°C)
Number Cycles
Fig. Typical Instantaneous Forward Characteristics
Instantaneous Reverse Leakage Current (µA)
1000
Fig. Typical Reverse Leakage Characteristics
125°C
Instantaneous Forward Current
25°C Pulse Width 300µs Duty Cycle
85°C
25°C
0.01
0.01
Instantaneous Forward Voltage
Percent Rated Peak Reverse Voltage
Fig. Typical Junction Capacitance
1,000
Fig. Typical Thermal Impedance
Transient Thermal Impedance (°C/W)
Mounted 0.2" 7mm) Copper Areas
Junction Capacitance (pF)
25°C Vsig 50mVp-p
0.01
Reverse Voltage www.vishay.com
Pulse Duration (sec.) Document Number 88586 16-Oct-02

formerly General Semiconductor Surface Mount Ultrafast Plastic Re

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