Silicon N-channel junction (Tr1) Silicon epitaxial planer transistor (

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Silicon N-channel junction (Tr1) Silicon epitaxial planer transistor (

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XP08081 (XP8081)
Silicon N-channel junction (Tr1) Silicon epitaxial planer transistor (Tr2)
analog switching (Tr1)/switching (Tr2)
(0.425)
0.2±0.05
0.12+0.05 -0.02
1.25±0.10 2.1±0.1
Features
elements incorporated into package. Reduction mounting area assembly cost half.
(0.65) (0.65) 1.3±0.1 2.0±0.1
Basic Part Number Element
0.9±0.1
Absolute Maximum Ratings
Parameter Gate drain voltage Drain current Gate current Collector base voltage Collector emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VGDS VCBO VCEO Tstg
(Ta=25°C)
Ratings +150 Unit
Drain (Tr1) Emitter (Tr2) Source (Tr1) Base (Tr2) Collector (Tr2) Gate (Tr1) EIAJ SC-88 SMini6-G1 Package
Marking Symbol: Internal Connection
Note) Part number Parenthesis shows conventional part number.
0.9+0.2 -0.1
2SK1103+UNR1213(UN1213) (transistors with built-in resistor)
0.2±0.1
XP08081
(Ta=25°C)
Symbol VGDS IDSS IGSS VGSC RDS(on) Ciss Crss Coss Conditions -10µA, 10V, -30V, 10V, 10µA 10V, 1mA, 1kHz 10mV, 10V, 1MHz 10V, 1MHz 10V, 1MHz -1.0 Unit
Electrical Characteristics
Parameter
Gate drain voltage Drain current Gate cutoff current Gate source cutoff voltage Mutual conductance Drain resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance
Parameter Symbol VCBO VCEO ICBO ICEO IEBO VCE(sat) R1/R2 Conditions 10µA, 2mA, 50V, 50V, 10V, 10mA, 0.3mA 0.5V, 3.5V, 10V, -1mA, 200MHz -30% +30% 0.25 Unit
Collector base voltage Collector emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector emitter saturation voltage Output voltage high level Output voltage level Transition frequency Input resistance Resistance ratio
Common characteristics chart
Ta=25°C
XP08081
Total power dissipation (mW)
VGS=0V
Drain current (mA)
Drain current (mA)
Ta=-25°C 25°C
-0.1V -0.2V -0.3V -0.4V
75°C
-1.2
-1.0
-0.8 -0.6 -0.4 -0.2
Ambient temperature (°C)
Drain source voltage
Gate source voltage
Common source short-circuit input capacitance, Common source reverse transfer capacitance, Ciss, Crss, Coss (pF) Common source short-circuit output capacitance
Ciss, Crss, Coss
VDS=10V Ta=25°C
Forward transfer admittance |Yfs| (mS)
Forward transfer admittance |Yfs| (mS)
VDS=10V Ta=25°C
VGS=0 f=1MHz Ta=25°C
IDSS=10mA
IDSS=10mA
Ciss
Coss Crss
-1.6
-1.2 -0.8 -0.4
Gate source voltage
Drain current (mA)
Drain source voltage
Characteristics charts
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=10 Ta=25°C
VCE=10V
Collector current (mA)
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
25°C 0.03 0.01 -25°C Ta=75°C
Forward current transfer ratio
IB=1.0mA
Ta=75°C 25°C -25°C
0.2mA
0.1mA
1000
Collector emitter voltage
Collector current (mA)
Collector current (mA)
XP08081
VO=5V Ta=25°C VO=0.2V Ta=25°C
Collector output capacitance (pF)
f=1MHz IE=0 Ta=25°C
10000 3000
Output current (µA)
Input voltage
1000
0.03 0.01
Collector base voltage
Input voltage
Output current (mA)
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2001

Silicon N-channel junction (Tr1) Silicon epitaxial planer transistor (

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