IRF9540NS/L Advanced Process Technology Surface Mount (IRF9540S)

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IRF9540NS/L Advanced Process Technology Surface Mount (IRF9540S)

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91483D
IRF9540NS/L
Advanced Process Technology Surface Mount (IRF9540S) Low-profile through-hole (IRF9540L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description
HEXFET® Power MOSFET
VDSS -100V RDS(on) 0.117
-23A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. D2Pak surface mount power package capable accommodating sizes HEX-4. provides highest power capability lowest possible on-resistance existing surface mount package. D2Pak suitable high current applications because internal connection resistance dissipate 2.0W typical surface mount application. through-hole version (IRF9540L) available lowprofile applications.
TO-262
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C dv/dt TSTG Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
0.91 -5.0 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient Mounted,steady-state)**
Typ.
Max.
Units
°C/W
4/3/02
IRF9540NS/L
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance V(BR)DSS IDSS IGSS td(on) td(off) Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -100 -2.0 Typ. -0.11 1300 Max. Units Conditions -250µA V/°C Reference 25°C, -1mA 0.117 -10V, -11A -4.0 VGS, -250µA -50V, -11A -100V, -250 -80V, 150°C -100 -20V -11A -80V -10V, Fig. -50V -11A 4.2, Fig. Between lead, center contact -25V 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. -1.6 25°C, -11A, 25°C, -11A 1200 di/dt -100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited Starting 25°C, 7.1mH
max. junction temperature. fig.
Pulse width 300µs; duty cycle
Uses IRF9540N data test conditions
-11A. (See Figure
175°C When mounted square (FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994.
-11A, di/dt -470A/µs, V(BR)DSS,
IRF9540NS/L
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
-4.5V 20µs PULSE WIDTH 175°C
-4.5V
20µs PULSE WIDTH 25°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
25°C 175°C
DS(on) Drain-to-Source Resistance (Normalized)
-19A
Drain-to-Source Current
-25V 20µs PULSE WIDTH
-10V
-VGS Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRF9540NS/L
3000
2500
-VGS Gate-to-Source Voltage
1MHz SHORTED
-11A -80V -50V -20V
Capacitance (pF)
2000
Ciss
1500
Coss
1000
Crss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED DS(on)
Drain Current
175°C 25°C
100µs
25°C 175°C Single Pulse
10ms
1000
-VSD Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRF9540NS/L
Drain Current
D.U.T.
-10V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF9540NS/L
Single Pulse Avalanche Energy (mJ)
1200
1000
BOTTOM
-4.7A -8.1A -11A
D.U.T
DRIVER
-20V
0.01
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
V(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
D.U.T.
-10V
IRF9540NS/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity D.U.T P-Channel
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD]
5.0V Logic Level Drive Devices P-Channel HEXFETS
IRF9540NS/L
D2Pak Package Outline
D2Pak Part Marking Information
THIS IRF530S WITH CODE 8024 EMBLED 2000 SEMBLY LINE INTERNATIONAL RECTIFIER LOGO EMBLY CODE PART NUMBER F530S CODE YEAR 2000 WEEK LINE
IRF9540NS/L
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: IRL3103L CODE 1789 EMBLED 1997 EMBLY LINE ERNATIONAL RECTIFIER LOGO SEMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
IRF9540NS/L
D2Pak Tape Reel Information
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.4/02

IRF9540NS/L Advanced Process Technology Surface Mount (IRF9540S)

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