HM5116400B Series 4,194,304-word 4-bit Dynamic Random Access Memo

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HM5116400B Series 4,194,304-word 4-bit Dynamic Random Access Memo

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ADE-203-367
HM5116400B Series
4,194,304-word 4-bit Dynamic Random Access Memory
Rev. Mar. 1996
Hitachi HM5116400B CMOS dynamic organized 4,194,304-word 4-bit. employs most advanced CMOS technology high performance power. HM5116400B offers Fast Page Mode high speed access mode.
Ordering Information
Type HM5116400BS-6 HM5116400BS-7 HM5116400BS-8 HM5116400BLS-6 HM5116400BLS-7 HM5116400BLS-8 HM5116400BTS-6 HM5116400BTS-7 HM5116400BTS-8 HM5116400BLTS-6 HM5116400BLTS-7 HM5116400BLTS-8 Access time Package 300-mil 26-pin plastic TSOP (TTP-26/24DA) 300-mil 26-pin plastic (CP-26/24DB)
Feature
Single (±10%) High speed Access time: ns/70 ns/80 (max) power dissipation Active mode: mW/385 mW/358 (max) Standby mode: (max) 0.83 (max)(L-version) Fast page mode capability Long refresh period 4096 refresh cycles: (L-version) variations refresh RAS-only refresh CAS-before-RAS refresh Hidden refresh Battery backup operation (L-version) Test function 16-bit parallel test mode
This specification fully compatible with 16-Mbit DRAM specifications from TEXAS INSTRUMENTS.
HM5116400B Series
Block Diagram
Buffer Buffer
Column decoder driver
Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. cell cell cell cell cell cell cell cell cell cell cell cell cell cell cell cell array array array array array array array array array array array array array array array array
Peripheral circuit
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Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp.
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Selector
Selector Selector decoder driver
decoder driver
Selector
Column decoder driver
Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. 256k memory Sense amp. cell cell cell cell cell cell cell cell cell cell cell cell cell cell cell cell array array array array array array array array array array array array array array array array
decoder driver
Selector
Selector Buffer Selector decoder driver
Buffer
Selector Address
HM5116400B Series
Characteristics +70°C, ±10%,
HM5116400B Parameter Operating current*1, Symbol ICC1 ICC2
Unit Test conditions interface RAS, Dout High-Z CMOS interface RAS, Dout High-Z CMOS interface RAS, Dout High-Z Dout enable CMOS interface Dout High-Z refresh: 31.3 tRAS Vout Dout disable High Iout Iout
Standby current
Standby current (L-version)
ICC2
RAS-only refresh current*2 ICC3 Standby current*1 ICC5
CAS-before-RAS refresh current Fast page mode current*1, Battery back current
ICC6 ICC7 ICC10
Input leakage current Output leakage current Output high voltage Output voltage
Notes depends output load condition when device selected. specified output open condition. Address changed once less while VIL. Address changed once less while VIH.
HM5116400B Series
Read, Write, Read-Modify-Write Refresh Cycles (Common parameters)
HM5116400B Parameter Random read write cycle time precharge time precharge time pulse width pulse width address setup time Symbol tRAS tCAS tASR 10000 10000 10000 10000 10000 10000 Unit Notes
address hold time tRAH Column address setup time Column address hold time tASC tCAH
delay time tRCD column address tRAD delay time hold time hold time tRSH tCSH
precharge tCRP time delay time delay time from Transition time (rise fall) tOED tDZC delay time from tDZO
HM5116400B Series
Write Cycle
HM5116400B Parameter Write command setup time Write command hold time Write command pulse width Write command lead time Write command lead time Data-in setup time Data-in hold time Symbol tWCS tWCH tRWL tCWL Unit Notes
Read-Modify-Write Cycle
HM5116400B Parameter Read-modify-write cycle time delay time delay time Symbol tRWC tRWD tCWD Unit Notes
Column address tAWD delay time hold time from tOEH
HM5116400B Series
Test Mode Cycle
HM5116400B Parameter Test mode setup time Test mode hold time Symbol tWTS tWTH Unit Notes
Refresh
Parameter Refresh period Refresh period (L-version) Symbol tREF tREF Unit Notes 4096 cycles 4096 cycles
HM5116400B Series
Timing Waveforms*22
Read Cycle
Address
Column
High-Z
Dout Dout
Notes:
(min) (max), (min) (max))
Invalid Dout
HM5116400B Series
Delayed Write Cycle
Address
Column
High-Z
Dout High-Z* Invalid Dout
HM5116400B Series
RAS-Only Refresh Cycle
Address Dout High-Z
Refresh Address (RA0 RA11)
CAS-Before-RAS Refresh Cycle
Address
Dout
High-Z
HM5116400B Series
Fast Page Mode Read Cycle
RASP CPRH
Address Column Column Column
tRCS High-Z High-Z tRCH tRCH
High-Z
Dout Dout Dout Dout
HM5116400B Series
Fast Page Mode Delayed Write Cycle
RASP
Address Column Column Column
Dout
High-Z*
Invalid Dout Invalid Dout Invalid Dout
HM5116400B Series
Test Mode Cycle
Cycle** Test Mode Cycle *,** Reset Cycle Normal Mode
RAS-only refresh Address, Din,
Test Mode Cycle
Address High-Z
Dout
HM5116400B Series
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission.
Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor product. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales office when planning products MEDICAL APPLICATIONS.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tokyo (03) 3270-2111 (03) 3270-5109
further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 415-589-8300 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher StraBe D-85622 Feldkirchen Munchen 089-9 80-0 089-9 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Wihtebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom 0628-585000 0628-778322 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Habour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong 27359218 27306071 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 535-2100 535-1533

HM5116400B Series 4,194,304-word 4-bit Dynamic Random Access Memo

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