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DCR1374SBA Phase Control Thyristor Replaces February 2001 ve


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DCR1374SBA
DCR1374SBA
Phase Control Thyristor
Replaces February 2001 version, DS4597-5.1 DS4597-5.2 July 2001
FEATURES
Double Side Cooling High Surge Capability Turn-on Losses
PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt
1800V 2694A 50000A 1000V/µs 1000A/µs
APPLICATIONS
High Voltage Power Converters Motor Control High Voltage Power Supplies
VOLTAGE RATINGS
Part Ordering Number Repetitive Peak Voltages VDRM VDRM 1800 1600 1400 1200 1000 Conditions
DCR1374SBA18 DCR1374SBA16 DCR1374SBA14 DCR1374SBA12 DCR1374SBA10 DCR1374SBA08
125°C, IDRM IRRM 150mA, VDRM, VRRM 10ms, VDSM VRSM VDRM VRRM 100V respectively
Outline type code: MU140 (See Package Details further information) Fig. Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select required part number shown Voltage Ratings selection table. example: DCR1374SBA16 Note: Please complete part number when ordering quote this number future correspondance relating your order.
www.dynexsemi.com
DCR1374SBA
CURRENT RATINGS
Tcase 60°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load 2694 4230 3682 Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load 1965 3086 2534
Tcase 80°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load 2084 3275 2770 Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load 1500 2350 1875
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DCR1374SBA
SURGE RATINGS
Symbol ITSM ITSM Parameter Surge (non-repetitive) on-state current fusing Surge (non-repetitive) on-state current fusing Test Conditions 10ms half sine, Tcase 125°C VRRM sine 10ms half sine, Tcase 125°C Max. 12.5 Units
THERMAL MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance junction case Test Conditions Double side cooled Single side cooled Anode Cathode Rth(c-h) Thermal resistance case heatsink Clamping force 40.0kN Double side Min. 36.0 Max. 0.013 0.021 0.034 0.003 0.006 44.0 Units
(with mounting compound) Single side Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Storage temperature range Clamping force
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DCR1374SBA
SURGE RATINGS
Symbol IRRM/IRRM dV/dt dI/dt Parameter Peak reverse off-state current Max. linear rate rise off-state voltage Rate rise on-state current Test Conditions VRRM/VDRM, Tcase 125°C VDRM, 125°C From VDRM 4600A Repetitive 50Hz Min. Max. 1000 1000 Units V/µs A/µs A/µs
Gate source 20V, Non-repetitive 0.5µs, 125°C VT(TO) Threshold voltage On-state slope resistance Delay time 125°C 125°C VDRM, gate source 30V, 0.5µs, 25°C Turn-off time 800A, 1ms, =125°C, 50V, dIRR/dt 20A/µs, VDRM, dVDR/dt 20V/µs linear Latching current Holding current 25°C, 25°C, VG-K
0.92 0.119
3001
Note Typical value
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DCR1374SBA
GATE TRIGGER CHARACTERISTICS RATINGS
Symbol VFGM VFGN VRGM IFGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM Tcase 25oC VDRM Tcase 25oC VDRM Tcase 125oC Anode positive with respect cathode Anode negative with respect cathode Anode positive with respect cathode table fig. Max. 0.25 0.25 Units
CURVES
8000 Measured under pulse conditions 125°C 7000
5000
Instantaneous on-state current,
4000
5000 4000 3000 2000 1000
Mean power dissipation
6000
3000
2000
1000
d.c. Half wave phase phase 1000 2000 3000 Mean on-state current IT(AV) 4000
Instantaneous on-state voltage,
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Power dissipation
VEQUATION
(IT) C.IT+D.IT
Where
0.4846543 8.508026 10-5 0.05408984 1.863019 10-3 these values valid 125°C 500A 8000A
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DCR1374SBA
10000 Conditions: 125°C 800A 100V Trapezoidal
Table gives pulse power Watts
Total stored charge (µC)
Gate trigger voltage,
Pulse width Pulse frequency 10ms
1000
125°C
dI/dt
limi
25°C
-40°C
Region certain triggering
0.001
Rate decay on-state current dI/dt (A/µs)
0.01 Gate trigger current
Fig.4 Stored charge
Fig.5 Gate characteristics
Peak half sine wave on-state current (kA)
Anode side cooled
Thermal impedance (°C/W)
0.01
Double side cooled
value (A2s 106)
0.001
Conduction
Effective thermal resistance Junction case °C/W Double side 0.0130 0.0141 0.0170 0.0200 Anode side 0.0210 0.0221 0.0250 0.0280
d.c. Halfwave phase 120° phase 0.0001 0.001 0.01
Cycles 50Hz
Time
Duration
Fig.6 Surge (non-repetitive) on-state current time (with VRRM Tcase 125°C) Fig.7 Maximum (limit) transient thermal impedance junction case (°C/W)
www.dynexsemi.com
DCR1374SBA
PACKAGE DETAILS
further package information, please contact Customer Services. dimensions unless stated otherwise. SCALE.
Hole approx both electrodes)
Cathode
Cathode
Gate
Anode
Nominal weight: 1100g Clamping force: 40kN ±10% Lead length: 420mm Lead terminal connector: ring Package outine type code: MU140
33.5
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POWER ASSEMBLY CAPABILITY
Power Assembly group provide support service those customers requiring more than basic semiconductor, developed flexible range heatsink clamping systems line with advances device voltages current capability semiconductors. offer extensive range liquid cooled assemblies covering full range circuit designs general today. Assembly group offers high quality engineering support dedicated designing units satisfy growing needs customers. Using latest methods team design applications engineers provide Power Assembly Complete Solution (PACs).
HEATSINKS
Power Assembly group proprietary range extruded aluminium heatsinks which have been designed optimise performance Dynex semiconductors. Data with respect natural, forced liquid cooling (with flow rates) available request. further information device clamps, heatsinks assemblies, please contact your nearest sales representative Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR Doddington Road, Lincoln. Lincolnshire. 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: (0)1522 502753 502901. Fax: (0)1522 500020 SALES OFFICES Benelux, Italy Switzerland: Tel: (0)1 Fax: (0)1 France: Tel: (0)2 Fax: (0)2 Germany, Northern Europe, Spain Rest World: Tel: (0)1522 502753 502901. Fax: (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) Tel: (949) 733-3005. Fax: (949) 733-2986. These offices supported Representatives Distributors many countries world-wide. Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION RESALE. PRODUCED UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets right hard corner front page, indicate product status. annotations follows:Target Information: This most tentative form information represents very preliminary specification. actual design work product been started. Preliminary Information: product design development. datasheet represents product understood details change. Advance Information: product design complete final characterisation volume production well hand. Annotation: product parameters fixed product available datasheet specification.
This publication issued provide information only which (unless agreed Company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. warranty guarantee express implied made regarding capability, performance suitability product service. Company reserves right alter without prior notice specification, design price product service. Information concerning possible methods provided guide only does constitute guarantee that such methods will satisfactory specific piece equipment. user's responsibility fully determine performance suitability equipment using such information ensure that publication data used date been superseded. These products suitable medical products whose failure perform result significant injury death user. products materials sold services provided subject Company's conditions sale, which available request. brand names product names used this publication trademarks, registered trademarks trade names their respective owners.
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