LIMIN CM800HA-66H HIGH POWER SWITCHING INSULATED TYPE H

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LIMIN CM800HA-66H HIGH POWER SWITCHING INSULATED TYPE H

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ation ecific chan fiits Notice parame
LIMIN
CM800HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800HA-66H
800A VCES 3300V Insulated Type 1-element pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25 57±0.25 NUTS
124±0.25
CIRCUIT DIAGRAM
NUTS
10.35 10.65 48.8 61.5
MOUNTING HOLES
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998
ation ecific chan fiits Notice parame
LIMIN
CM800HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS 25°C)
Symbol VCES VGES (Note (Note (Note Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight Short Short 25°C Pulse 25°C Pulse 25°C Conditions Ratings 3300 1600 1600 6940 +150 +125 6000 6.67 8.24 2.84 3.43 0.88 1.08 Unit
(Note (Note
Main terminal Base, minute Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Test conditions VCES, 80mA, VGES, 25°C 800A, 125°C 1650V, 800A, 1650V, 800A VGE1 VGE2 3.75 Resistive load switching operation 800A, 800A -1600A IGBT part FWDi part Case fin, conductive grease applied
Limits 4.40 4.80 3.30 0.008
5.72 1.60 2.00 2.50 1.00 4.29 1.20 0.018 0.036
Unit °C/W °C/W °C/W
(Note
VEC, trr, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. Junction temperature (Tj) should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998
ation ecific chan fiits Notice parame
LIMIN
CM800HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25°C
COLLECTOR CURRENT COLLECTOR CURRENT
TRANSFER CHARACTERISTICS (TYPICAL) 1600 VCE=10V
1400 1200 1000 VGE=13V VGE=14V VGE=15V VGE=20V
VGE=12V VGE=11V
1400 1200 1000 25°C 125°C
VGE=10V
VGE=9V VGE=8V VGE=7V
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj=25°C
VGE=15V
EMITTER CURRENT
25°C 125°C 1200 1600 2000
COLLECTOR CURRENT
EMITTER-COLLECTOR VOLTAGE
Aug.1998

LIMIN CM800HA-66H HIGH POWER SWITCHING INSULATED TYPE H

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