Single IGBTMODU-Series Module Amperes/1200 Volts NUTS N

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Single IGBTMODU-Series Module Amperes/1200 Volts NUTS N

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CM600HU-24H
Single IGBTMODU-Series Module
Amperes/1200 Volts
NUTS
NUTS Mounting Holes
Measured Point
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistor single configuration with reverseconnected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies
Outline Drawing Circuit Diagram Dimensions Inches 4.33 3.66±0.01 3.15 2.44±0.01 0.53 0.37 0.57 Millimeters 110.0 93.0±0.25 80.0 62.0±0.25 13.5 14.5 Dimensions Inches 0.96 0.22 1.14 0.85 1.34 +0.04/-0.02 0.26 Dia. Millimeters 24.5 29.0 21.5 +1.0/-0.5 Dia.
Ordering Information: Example: Select complete module number desire from table i.e. CM600HU-24H 1200V (VCES), Ampere Single IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
1.02 +0.04/-0.02 +1.0/-0.5
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24H Single IGBTMODU-Series Module Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current 150°C) Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Mounting Torque, Terminal Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM600HU-24H 1200 1200* 1200* 3100 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 60mA, 600A, 15V, 25°C 600A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage* 600V, 600A, 600A, Min. Typ. 2.85 2250 Max. Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating.
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 600V, 600A, VGE1 VGE2 15V, Resistive Load Switching Operation 600A, diE/dt -1200A/µs 600A, diE/dt -1200A/µs 10V, Test Conditions Min. Typ. Max. 31.5 Units
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions IGBT Module FWDi Module Module, Thermal Grease Applied Min. Typ. 0.015 Max. 0.04 0.06 Units °C/W °C/W °C/W
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24H Single IGBTMODU-Series Module Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
1200
25°C 125°C 25°C 125°C
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1200
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, (AMPERES)
1200A
Cies
600A
Coes
Cres 1MHz
240A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-1 10-1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt -1200A/µsec 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
td(off)
REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
600A 400V
600V
SWITCHING TIME, (ns)
td(on)
600V ±15V 125°C
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
1600 2400 3200
GATE CHARGE, (nC)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24H Single IGBTMODU-Series Module Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
10-3
10-2
10-1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3
10-2
10-1
Single Pulse 25°C Unit Base Rth(j-c) 0.04°C/W
Single Pulse 25°C Unit Base Rth(j-c) 0.06°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3

Single IGBTMODU-Series Module Amperes/1200 Volts NUTS N

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