Trench Gate Design Single IGBTMODAmperes/600 Volts TYP) TYP.

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Trench Gate Design Single IGBTMODAmperes/600 Volts TYP) TYP.

Datasheet Thumbnail

Top Searches for this datasheet

CM600HU-12F
Trench Gate Design Single IGBTMODAmperes/600 Volts
TYP)
TYP.)
TYP)
MEASURING POINT
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistor single configuration with reverse-connected super-fast recovery freewheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Battery Powered Supplies
Outline Drawing Circuit Diagram Dimensions Inches 4.21 2.44 Millimeters 107.0 62.0 Dimensions Inches 1.02 1.14 0.26 0.49 Millimeters 26.0 29.0 12.55
1.34 +0.04/-0.02 34.0 +1.0/-0.5 3.66±0.01 1.88±0.01 0.37 0.39 0.53 93.0±0.25 48.0±0.25 10.0 13.5
Ordering Information: Example: Select complete module number desire from table i.e. CM600HU-12F 600V (VCES), Ampere Single IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
1.02 +0.04/-0.02 26.0 +1.0/-0.5 0.81 20.5
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12F Trench Gate Design Single IGBTMOD600 Amperes/600 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current 150°C) Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Mounting Torque, Terminal Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM600HU-12F 1200* 1200* 1420 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VCES, 60mA, 600A, 15V, 25°C 600A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage** 300V, 600A, 600A, Min. Typ. 3720 Max. Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12F Trench Gate Design Single IGBTMOD600 Amperes/600 Volts
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 300V, 600A, VGE1 VGE2 15V, Inductive Load Switching Operation 600A 10V, Test Conditions Min. Typ. 11.7 Max. Units
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions IGBT, Reference Point Outline Drawing Thermal Resistance, Junction Case FWDi, Reference Point Outline Drawing Thermal Resistance, Junction Case IGBT, Reference Point Under Chip Contact Thermal Resistance Module, Thermal Grease Applied 0.02 °C/W
Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. 0.088
Units °C/W °C/W °C/W
0.12
0.04
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12F Trench Gate Design Single IGBTMOD600 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
1000
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
25°C 125°C
25°C
1200A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
600A 240A
1000 1200
COLLECTOR-CURRENT, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
EMITTER CURRENT, (AMPERES)
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
td(off) td(on)
SWITCHING TIME, (ns)
Cies
300V ±15V 125°C Inductive Load
Coes Cres
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT FWDi)
REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-3
10-2
10-1
600A
200V 300V
Unit Base Rth(j-c) 0.088°C/W (IGBT) Rth(j-c) 0.12°C/W (FWDi) Single Pulse 25°C
300V ±15V 25°C Inductive Load
10-1
10-1
10-2
10-2
EMITTER CURRENT, (AMPERES)
1000 2000 3000 4000 5000
GATE CHARGE, (nC)
10-3 10-5
TIME,
10-4
10-3 10-3

Trench Gate Design Single IGBTMODAmperes/600 Volts TYP) TYP.

Top Searches for this datasheet

Other recent searches