LIMIN CM600DY-34H HIGH POWER SWITCHING INSULATED TYPE H

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LIMIN CM600DY-34H HIGH POWER SWITCHING INSULATED TYPE H

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ation ecific chan fiits Notice parame
LIMIN
CM600DY-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM600DY-34H
600A VCES 1700V Insulated Type 2-elements pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25
57±0.25
NUTS
124±0.25
CIRCUIT DIAGRAM
NUTS
55.2
MOUNTING HOLES
11.5
31.5
11.85
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb.1999
LABEL
tion. cifica chang fins subje limit Notice parame
LIMIN
CM600DY-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol VCES VGES (Note (Note (Note Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight Short Short 25°C Pulse 25°C Pulse 25°C Conditions Ratings 1700 1200 1200 6250 +150 +125 4000 6.67 13.00 2.84 6.00 0.88 2.00 Unit
(Note (Note
Main terminal Base, minute Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Test conditions VCES, 60mA, VGES, 25°C 600A, 125°C 850V, 600A, 850V, 600A VGE1 VGE2 Resistive load switching operation 600A, 600A -1200A IGBT part (Per module) FWDi part (Per module) Case fin, conductive grease applied (Per module)
Limits 2.75 3.30 10.0 2.40 0.016
3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.020 0.064
Unit °C/W °C/W °C/W
(Note
VEC, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. Junction temperature should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb.1999

LIMIN CM600DY-34H HIGH POWER SWITCHING INSULATED TYPE H

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