Trench Gate Design IGBTMODAmperes/1200 Volts CONNECTED CONNECTED

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Trench Gate Design IGBTMODAmperes/1200 Volts CONNECTED CONNECTED

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CM50TJ-24F
Trench Gate Design IGBTMODAmperes/1200 Volts
CONNECTED CONNECTED
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistors three phase bridge configuration, with each transistor having reverseconnected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Battery Powered Supplies Ordering Information: Example: Select complete module number desire from table i.e. CM50TJ-24F 1200V (VCES), Ampere SixIGBT IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Outline Drawing Circuit Diagram Dimensions Inches 4.78 2.42 0.67 4.33±0.01 3.00 0.75 0.60 0.15 2.26 1.97±0.01 1.07 Millimeters 121.5 61.5 17.0 110.0±0.25 76.2 19.05 15.24 3.81 57.5 50.0±0.25 27.0 Dimensions Inches 0.15 0.75 0.15 3.00 0.60 0.45 0.04 0.22 0.12 0.81 3.72 4.62 Millimeters 3.81 19.05 3.81 76.2 15.24 1.15 20.5 94.5 118.11
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TJ-24F Trench Gate Design IGBTMOD50 Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current 150°C) Emitter Current 25°C)** Peak Emitter Current** Maximum Collector Dissipation 150°C) 25°C) Mounting Torque, Mounting Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM50TJ-24F 1200 100* 100* 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb Grams Volts
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 5mA, 50A, 15V, 25°C 50A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage** 600V, 50A, 50A, Min. Typ. Max. Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TJ-24F Trench Gate Design IGBTMOD50 Amperes/1200 Volts
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 600V, 50A, VGE1 VGE2 15V, Inductive Load Switching Operation 10V, 1MHz Test Conditions Min. Typ. Max. 0.85 0.80 Units
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(j-c)'D Test Conditions IGBT Module, Reference Point Outline Drawing Thermal Resistance, Junction Case FWDi Module, Reference Point Outline drawing Thermal Resistance, Junction Case IGBT Module, Reference Point Under Chip Thermal Resistance, Junction Case FWDi Module, Reference Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Module, Thermal Grease Applied 0.13 °C/W
Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. 0.57
Units °C/W °C/W °C/W °C/W
0.96
0.34
0.45
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TJ-24F Trench Gate Design IGBTMOD50 Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
25°C 125°C
25°C
100A
COLLECTOR-CURRENT, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, (AMPERES)
600V ±15V 125°C Inductive Load td(off)
SWITCHING TIME, (ns)
Cies
td(on)
Coes Cres
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT FWDi)
REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-3
10-2
10-1
600V
Rth(j-c) 0.57°C/W (IGBT) Under Chip 0.34°C/W Rth(j-c) 0.96°C/W (FWDi)
600V ±15V 25°C Inductive Load
400V
10-1
10-1
10-2
EMITTER CURRENT, (AMPERES)
Unit Base Single Pulse 25°C
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
GATE CHARGE, (nC)

Trench Gate Design IGBTMODAmperes/1200 Volts CONNECTED CONNECTED

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