Dual IGBTMODU-Series Module Amperes/1200 Volts Measured Poin
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CM50DU-24H
Dual IGBTMODU-Series Module
Amperes/1200 Volts
Measured Point
3-M5 Nuts
C2E1
Mounting Holes (6.5 Dia.)
0.110
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistors halfbridge configuration with each transistor having reverse-connected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete module number desire from table i.e. CM50DU-24H 1200V (VCES), Ampere Dual IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
C2E1
Outline Drawing Circuit Diagram Dimensions Inches 3.15±0.01 1.89 0.94 0.28 0.67 0.91 0.91 0.43 0.71 0.16 Millimeters 94.0 80.0±0.25 48.0 24.0 17.0 23.0 23.0 11.0 18.0 Dimensions Inches 0.47 0.53 0.63 0.98 Millimeters 12.0 13.5 16.0 25.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5 0.83 0.16 0.51 21.2 13.0
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMODU-Series Module Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C, 150°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM50DU-24H 1200 100* 100* 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 5mA, 50A, 15V, 25°C 50A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage** 600V, 50A, 50A, Min. Typ. 2.85 Max. Units Volts Volts Volts Volts
**Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 600V, 50A, VGE1 VGE2 15V, Resistive Load Switching Operation 50A, diE/dt -100A/µs 50A, diE/dt -100A/µs 10V, Test Conditions Min. Typ. 0.28 Max. Units
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
**Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions IGBT Module FWDi Module Module, Thermal Grease Applied Min. Typ. 0.035 Max. 0.31 Units °C/W °C/W °C/W
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMODU-Series Module Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
COLLECTOR CURRENT, (AMPERES)
25°C 125°C 25°C 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
1MHz
100A
EMITTER CURRENT, (AMPERES)
Cies
Coes Cres
10-1
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-2 10-1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt -100A/µsec 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
REVERSE RECOVERY TIME, trr, (ns)
600V ±15V 125°C td(off)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME, (ns)
400V 600V
td(on)
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
GATE CHARGE, (nC)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMODU-Series Module Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
10-3
10-2
10-1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3
10-2
10-1
Single Pulse 25°C Unit Base Rth(j-c) 0.31°C/W
Single Pulse 25°C Unit Base Rth(j-c) 0.7°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3
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