LIMIN CM400DY-66H HIGH POWER SWITCHING INSULATED TYPE H

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LIMIN CM400DY-66H HIGH POWER SWITCHING INSULATED TYPE H

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LIMIN
CM400DY-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM400DY-66H
400A VCES 3300V Insulated Type 2-elements pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25 57±0.25
NUTS
124±0.25
CIRCUIT DIAGRAM
E2(C1)
MOUNTING HOLES 24.5 53.6 61.5 39.5
NUTS 36.3 48.8
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
LABEL
Aug.1998
ation ecific chan fiits Notice parame
LIMIN
CM400DY-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS 25°C)
Symbol VCES VGES (Note (Note (Note Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight Short Short 25°C Pulse 25°C Pulse 25°C Conditions Ratings 3300 3470 +150 +125 6000 6.67 8.24 2.84 3.43 0.88 1.08 Unit
(Note (Note
Main terminal Base, minute Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Test conditions VCES, 40mA, VGES, 25°C 400A, 125°C 1650V, 400A, 1650V, 400A VGE1 VGE2 Resistive load switching operation 400A, 400A -800A IGBT part (Per module) FWDi part (Per module) Case fin, conductive grease applied (Per module)
Limits 4.40 4.80 3.30 0.016
5.72 1.00 2.00 2.00 1.00 4.29 1.20 0.036 0.072
Unit °C/W °C/W °C/W
(Note
VEC, trr, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. Junction temperature (Tj) should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998
ation ecific chan fiits tric Notice parame
LIMIN
CM400DY-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Tj=25°C
COLLECTOR CURRENT COLLECTOR CURRENT
TRANSFER CHARACTERISTICS (TYPICAL) VCE=10V 25°C 125°C
VGE=20V VGE=13V VGE=14V VGE=15V
VGE=12V VGE=11V
VGE=10V
VGE=9V VGE=8V VGE=7V
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj=25°C
VGE=15V
EMITTER CURRENT
25°C 125°C 1000
COLLECTOR CURRENT
EMITTER-COLLECTOR VOLTAGE
Aug.1998

LIMIN CM400DY-66H HIGH POWER SWITCHING INSULATED TYPE H

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