High Frequency N-P-N Transistor Array CA3127* consists five gener
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CA3127
High Frequency N-P-N Transistor Array
CA3127* consists five general purpose silicon n-p-n transistors common monolithic substrate. Each completely isolated transistors exhibits noise value excess 1GHz, making CA3127 useful from 500MHz. Access provided each terminals individual transistors separate substrate connection been provided maximum application flexibility. monolithic construction CA3127 provides close electrical thermal matching five transistors.
Formerly Development Number TA6206.
March 1993
Features
Gain Bandwidth Product (fT). >1GHz Power Gain 30dB (Typ) 100MHz Noise Figure 3.5dB (Typ) 100MHz Five Independent Transistors Common Substrate
Applications
Amplifiers Multifunction Combinations RF/Mixer/Oscillator Sense Amplifiers Synchronous Detectors Mixers Converter Amplifiers Synthesizers Cascade Amplifiers
Ordering Information
PART NUMBER CA3127E CA3127F CA3127M CA3127M96 TEMPERATURE RANGE -55oC +125oC +125 -55oC +125oC +125
PACKAGE Lead Plastic Lead Ceramic Lead Narrow Body SOIC Lead Narrow Body SOIC*
Denotes Tape Reel.
Pinout
CA3127 (PDIP, CDIP, 150MIL SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
662.2
6-46
Specifications CA3127
Absolute Maximum Ratings
Power Dissipation, Transistor 85mW Total Package +75oC 425mW +75oC .Derate Linearly 6.67mW/oC following ratings apply each transistor device Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Collector Current, 20mA Junction Temperature +175oC Junction Temperature (Plastic Packages) +150oC Lead Temperature (Soldering Sec.). +300oC
Operating Conditions
Operating Temperature Range -55oC +125oC Storage Temperature Range. -65oC +150oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications
PARAMETERS
+25oC LIMITS TEST CONDITIONS 10µA, 1mA, 10µA, 10µA, 10V, 0.1mA 0.71 0.66 0.60 0.81 0.76 0.70 0.26 1.15 Fig. 0.91 0.86 0.80 0.50 mmho UNITS
SPECIFICATIONS (For Each Transistor) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown-Voltage Emitter-to-Base Breakdown Voltage (Note Collector-Cutoff-Current Collector-Cutoff-Current Forward-Current Transfer Ratio
Base-to-Emitter Voltage
0.1mA
Collector-to-Emitter Saturation Voltage Magnitude Difference Magnitude Difference SWITCHING SPECIFICATIONS Noise Figure Gain-Bandwidth Product Collector-to-Base Capacitance Collector-to-Substrate Capacitance Emitter-to-Base Capacitance Voltage Gain Power Gain Noise Figure Input Resistance Output Resistance Input Capacitance Output Capacitance Magnitude Forward Transadmittance NOTE:
10mA, Matched
100kHz, 500, 1MHz 1MHz 1MHz 10MHz, Cascode Configuration 100MHz, 12V, Common-Emitter Configuration 1mA,
collector each transistor CA3127 isolated from substrate integral diode. substrate (terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. When used zener reference voltage, device must subjected more than 0.1mJ energy from possible capacitance electrostatic discharge order prevent degradation junction. Maximum operating zener current should less than 10mA.
6-47
CA3127 Typical Performance Curves
+25oC RSOURCE 10Hz +25oC RSOURCE 10Hz 100Hz
NOISE FIGURE (dB)
100Hz
NOISE FIGURE (dB)
1kHz 10kHz
1kHz 10kHz 100kHz
100kHz 0.01 COLLECTOR CURRENT (mA) 0.01 COLLECTOR CURRENT (mA)
FIGURE NOISE FIGURE COLLECTOR CURRENT RSOURCE
FIGURE NOISE FIGURE COLLECTOR CURRENT RSOURCE
-55oC BASE-TO-EMITTER VOLTAGE +25oC
GAIN-BANDWIDTH PRODUCT (GHz)
+25oC
+125oC
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE GAIN-BANDWIDTH PRODUCT COLLECTOR CURRENT
FIGURE BASE-TO-EMITTER VOLTAGE COLLECTOR CURRENT
+25oC 1MHz 2.25 CAPACITANCE (pF) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25
CAPACITANCE (pF)
TRANSISTOR
TOTAL TOTAL TOTAL TOTAL
BIAS
0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65 0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35 0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40 0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25 0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35
BIAS VOLTAGE
FIGURE CAPACITANCE BIAS VOLTAGE
FIGURE TYPICAL CAPACITANCE VALUES 1MHz. THREE TERMINAL MEASUREMENT. GUARD TERMINALS EXCEPT THOSE UNDER TEST.
6-48
CA3127 Typical Performance Curves (Continued)
VOLTAGE GAIN (dB) VOLTAGE GAIN (dB) FREQUENCY (MHz) 1000 0.2mA 0.5mA +25oC, TEST CIRCUIT FIGURE +25oC, TEST CIRCUIT FIGURE FREQUENCY (MHz) 1000 0.5mA 0.2mA
FIGURE VOLTAGE GAIN FREQUENCY
FIGURE VOLTAGE GAIN FREQUENCY
FORWARD CURRENT TRANSFER RATIO
INPUT CONDUCTANCE (g11) SUSCEPTANCE (b11) (mmho)
+25oC
+25oC,
COLLECTOR CURRENT (mA)
FREQUENCY (MHz) 1000
FIGURE FORWARD-CURRENT TRANSFER RATIO (hFE) COLLECTOR CURRENT
FIGURE INPUT ADMITTANCE (Y11) FREQUENCY
OUTPUT CONDUCTANCE (g22) (mmho) OUTPUT SUSCEPTANCE (b22) (mmho) +25oC 200MHz COLLECTOR CURRENT (mA) FREQUENCY (MHz) 1000 +25oC
INPUT CONDUCTANCE (g11)
FIGURE INPUT ADMITTANCE (Y11) COLLECTOR CURRENT
SUSCEPTANCE (b11) (mmho)
FIGURE OUTPUT ADMITTANCE (Y22) FREQUENCY
6-49
CA3127 Typical Performance Curves (Continued)
OUTPUT CONDUCTANCE (g22) (mmho) PHASE-ANGLE FORWARD TRANSADMITTANCE (|21|) (DEGREES) PHASE-ANGLE REVERSE TRANSADMITTANCE (|12|) (DEGREES) OUTPUT SUSCEPTANCE (b22) (mmho) +25oC 200MHz 0.400 0.375 0.350 0.325 0.300 0.275 0.250 0.225 0.200 0.175 COLLECTOR CURRENT (mA) +25oC 200MHz
MAGNITUDE FORWARD TRANSADMITTANCE (|Y21|) (mmho)
|Y21|
-100 COLLECTOR CURRENT (mA)
FIGURE OUTPUT ADMITTANCE (Y22) COLLECTOR CURRENT
+25oC
FIGURE FORWARD TRANSADMITTANCE (Y21) COLLECTOR CURRENT
+25oC 200MHz
MAGNITUDE FORWARD TRANSADMITTANCE (|Y21|) (mmho)
MAGNITUDE REVERSE TRANSADMITTANCE (|Y12|) (mmho)
PHASE-ANGLE FORWARD TRANSADMITTANCE (|21|) (DEGREES)
-100 |Y12| -110 -120 -130 -140 -150 COLLECTOR CURRENT (mA)
|Y21|
0.21
FREQUENCY (MHz)
-100 1000
FIGURE FORWARD TRANSADMITTANCE (Y21) FREQUENCY
+25oC |Y12| -110 -115 -120 1000 -100 -105
FIGURE REVERSE TRANSADMITTANCE (Y12) COLLECTOR CURRENT
PHASE-ANGLE REVERSE TRANSADMITTANCE (|12|) (DEGREES) BIAS-CURRENT
MAGNITUDE REVERSE TRANSADMITTANCE (|Y12|) (mmho)
0.01
0.01µF 0.01 470pF 470pF
FREQUENCY (MHz)
FIGURE REVERSE TRANSADMITTANCE (Y12) FREQUENCY
FIGURE VOLTAGE-GAIN TEST CIRCUIT USING CURRENTMIRROR BIASING
6-50
CA3127 Typical Performance Curves (Continued)
SHIELD 1000pF 0.3µH 1.8pF OHMITE Z144 1000 1000 +12V 1000 1000 TEST POINT
0.47µH
This circuit chosen because conveniently represents close approximation performance properly unilateralized single transistor this type. current-mirror configuration facilitates simplified biasing. cascode circuit implies that transistors cannot used individually.
*E.F. JOHNSON NUMBER 160-104-1
EQUIVALENT
FIGURE 100MHz POWER-GAIN NOISE-FIGURE TEST CIRCUIT
GENERAL RADIO 1021-P1 100MHz GENERATOR
ATTN
100MHz TEST
BOONTON R.F. VOLTMETER
VOLT POWER SUPPLY
POWER GAIN SET-UP
NOISE SOURCE HEWLETT PACKARD HP343A
100MHz TEST
100MHz POST AMPLIFIER
NOISE FIGURE METER HEWLETT PACKARD HP342A
VOLT POWER SUPPLY
VOLT POWER SUPPLY
NOISE FIGURE SET-UP FIGURE BLOCK DIAGRAMS POWER-GAIN NOISE-FIGURE TEST SET-UPS
6-51
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