N-P-N/P-N-P Transistor Array CA3096C, CA3096, CA3096A general pur
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CA3096
N-P-N/P-N-P Transistor Array
CA3096C, CA3096, CA3096A general purpose high voltage silicon transistor arrays. Each array consists five independent transistors (two p-n-p three n-p-n types) common substrate, which separate connection. Independent connections each transistor permit maximum flexibility circuit design. Types CA3096A, CA3096, CA3096C identical, except that CA3096A specifications include parameter matching greater stringency ICBO, ICEO, VCE(SAT). CA3096C relaxed version CA3096.
March 1993
Applications
Five-Independent Transistors Three N-P-N P-N-P Differential Amplifiers Amplifiers Sense Amplifiers Level Shifters Timers Lamp Relay Drivers Thyristor Firing Circuits Temperature Compensated Amplifiers Operational Amplifiers
CA3096A, CA3096, CA3096C Essential Differences
CHARACTERISTIC V(BR)CEO CA3096A CA3096 CA3096C
Ordering Information
PART NUMBER CA3096AE CA3096AM CA3096AM96 CA3096CE CA3096E CA3096M CA3096M96 TEMPERATURE RANGE -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC PACKAGE Lead Plastic Lead Narrow Body SOIC Lead Narrow Body SOIC* Lead Plastic Lead Plastic Lead Narrow Body SOIC Lead Narrow Body SOIC*
n-p-n p-n-p V(BR)CBO Min. n-p-n p-n-p
n-p-n p-n-p 100µA p-n-p ICBO (nA) Max.
150-500 20-200
150-500 20-200
100-670 15-200
Denotes Tape Reel
40-250
40-250
30-300
Pinout
CA3096, CA3096A, CA3096C (PDIP, SOIC) VIEW
n-p-n p-n-p ICEO (nA) Max. n-p-n p-n-p
-100
-100
SUBSTRATE
-100
1000 -1000
1000 -1000
Max.
n-p-n |VIO| (mV)Max. n-p-n p-n-p |IIO| (µA) Max. n-p-n p-n-p
0.25
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
595.2
6-33
Specifications CA3096, CA3096A, CA3096C
Absolute Maximum Ratings
N-P-N P-N-P Collector-to-Emitter Voltage, VCEO CA3096, CA3096A -40V CA3096C -24V Collector-to-Base Voltage, VCBO CA3096, CA3096A -40V CA3096C -24V Collector-to-Substrate Voltage, VCIO (Note CA3096, CA3096A CA3096C Emitter-to-Substrate Voltage, VEIO CA3096, CA3096A -40V CA3096C -24V Emitter-to-Base Voltage, VEBO CA3096, CA3096A -40V CA3096C -24V Collector Current, (All Types) .50mA -10mA Power Dissipation, +55oC) Device (Total) 750mW Each Transistor 200mW Above +55oC. .Derate Linearly 6.67mW/oC Junction Temperature (Plastic Packages) +150oC Lead Temperature (Soldering Sec.). +300oC
Operating Conditions
Operating Temperature Range -55oC +125oC Storage Temperature Range. -65oC +150oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Static Electrical Specifications
Equipment Design
+25C
LIMITS CA3096A PARAMETERS TEST CONDITIONS CA3096 CA3096C UNITS
EACH N-P-N TRANSISTOR ICBO 10V, =10V, =1mA, =10µA, 10µA, 10µA, 10µA =10mA, =1mA, 0.001 0.001 0.001
ICEO
0.006
0.006
1000
0.006
1000
V(BR)CEO V(BR)CBO
V(BR)CIO
V(BR)EBO
0.24
0.24
0.24
(Note (Note
0.69
0.78
0.69
0.78
0.69
0.78
6-34
Specifications CA3096, CA3096A, CA3096C
Static Electrical Specifications
Equipment Design LIMITS CA3096A PARAMETERS |VBE/T| (Note TEST CONDITIONS 1mA, CA3096 CA3096C UNITS mV/oC +25C (Continued)
EACH P-N-P TRANSISTOR ICBO -10V, -10V, -100µA, -10µA, -10µA, 10µA, -1mA, -100µA -100µA, -100µA, -1mA, |VBE/T| (Note -100µA, -0.006 -0.06 -100 -0.06 -100
ICEO
-0.12
-100
-0.12
-1000
-0.12
-1000
V(BR)CEO
V(BR)CBO
V(BR)EBO
-100
-100
V(BR)ElO
-0.16
-0.4
-0.16
-0.4
-0.16
-0.4
(Note
-0.5
-0.6
-0.7
-0.5
-0.6
-0.7
-0.5
-0.6
-0.7
(Note
mV/oC
ICBO ICEO V(BR)CEO V(BR)CBO V(BR)CIO
Collector-Cutoff Current Collector-Cutoff Current Collector-to-Emitter Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage
Emitter-to-Base Zener Voltage Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Forward-Current Transfer Ratio
|VBE/T| Magnitude Temperature Coefficient: (for each transistor)
V(BR)EBO NOTE:
Emitter-to-Base Breakdown Voltage
collector each transistor CA3096 isolated from substrate integral diode. substrate (terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. Actual forcing current emitter this test.
6-35
Specifications CA3096, CA3096A, CA3096C
Static Electrical Specifications
Equipment Design LIMITS CA3096A PARAMETERS SYMBOL TEST CONDITIONS UNITS +25oC (CA3096A Only)
TRANSISTORS DIFFERENTIAL AMPLIFIER) Absolute Input Offset Voltage Absolute Input Offset Current Absolute Input Offset Voltage Temperature Coefficient |VIO| |IIO| 0.07 µV/oC
TRANSISTORS DIFFERENTIAL AMPLIFIER) Absolute Input Offset Voltage Absolute Input Offset Current Absolute Input Offset Voltage Temperature Coefficient |VIO| |IIO| +25oC -5V, -100µA 0.15 0.54 µV/oC
Dynamic Electrical Specifications
Typical Values Intended Only Design Guidance TYPICAL VALUES
PARAMETERS EACH N-P-N TRANSISTOR Noise Figure (Low Frequency) Low-Frequency, Input Resistance Low-Frequency Output Resistance Admittance Characteristics Forward Transfer Admittance
SYMBOL
TEST CONDITIONS
UNITS
1kHz, 1mA, 1.0kHz, 1.0kHz,
1MHz, 1MHz, 1MHz, 1MHz, 1MHz, 1MHz, 1.0mA
-j13 j3.1 0.76 j2.4 0.75 0.46
mmho mmho mmho mmho mmho mmho
Input Admittance
Output Admittance
Gain-Bandwidth Product
Emitter-To-Base Capacitance Collector-To-Base Capacitance Collector-To-Substrate Capacitance
6-36
Specifications CA3096, CA3096A, CA3096C
Dynamic Electrical Specifications
+25oC
Typical Values Intended Only Design Guidance TYPICAL VALUES
PARAMETERS EACH P-N-P TRANSISTOR Noise Figure (Low Frequency) Low-Frequency Input Resistance Low-Frequency Output Resistance Gain-Bandwidth Product Emitter-To-Base Capacitance Collector-To-Base Capacitance Base-To-Substrate Capacitance
SYMBOL
TEST CONDITIONS
UNITS
1kHz, 100µA, 1kHz, 100µA 1kHz, 100µA 100µA
0.85 2.25 3.05
Metallization Mask Layout
CA3096H
37-45 (0.940-1.143)
4-10 (0.102-0.254) 37-45 (0.940-1.143)
Dimensions parentheses millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch). photographs dimensions represent chip when part wafer. When wafer into chips, cleavage angles instead with respect face chip. Therefore, isolated chip actually mils (0.17mm) larger both dimensions.
6-37
CA3096, CA3096A, CA3096C Typical Performance Curves
COLLECTOR CUT-OFF CURRENT (pA)
ZENER CURRENT (mA)
10-1
10-2
ZENER VOLTAGE
10-1 -100
TEMPERATURE (oC)
FIGURE BASE-TO-EMITTER ZENER CHARACTERISTIC (N-P-N)
FIGURE COLLECTOR CUT-OFF CURRENT (ICEO) TEMPERATURE (N-P-N)
FORWARD CURRENT TRANSFER RATIO
COLLECTOR CUT-OFF CURRENT (pA)
+85oC +25oC -40oC
10-1
10-2
0.01
TEMPERATURE (oC)
COLLECTOR CURRENT (mA)
FIGURE COLLECTOR CUT-OFF CURRENT (ICBO) TEMPERATURE (N-P-N)
FIGURE TRANSISTOR (N-P-N) COLLECTOR CURRENT
BASE EMITTER VOLTAGE BASE EMITTER VOLTAGE 10mA, 1.67mV/oC 5mA, 1.77mV/oC 1mA, 1.90mV/oC 100µA, 2.05mV/oC
0.01
COLLECTOR CURRENT (mA)
TEMPERATURE (oC)
FIGURE (N-P-N) COLLECTOR CURRENT
FIGURE (N-P-N) TEMPERATURE
6-38
CA3096, CA3096A, CA3096C Typical Performance Curves
COLLECTOR EMITTER SATURATION VOLTAGE
(Continued)
+25oC -40oC COLLECTOR CUT-OFF CURRENT (pA) +85oC
-10V
-15V
COLLECTOR CURRENT (mA) TEMPERATURE (oC)
FIGURE (N-P-N) COLLECTOR CURRENT
FIGURE COLLECTOR CUT-OFF CURRENT (ICEO) TEMPERATURE (P-N-P)
FORWARD CURRENT TRANSFER RATIO 0.01 COLLECTOR CURRENT (mA)
COLLECTOR CUT-OFF CURRENT (pA) -15V -10V
TEMPERATURE (oC)
FIGURE COLLECTOR CUT-OFF CURRENT (ICBO) TEMPERATURE (P-N-P)
FORWARD CURRENT TRANSFER RATIO 100µA 10µA
FIGURE TRANSISTOR (P-N-P) COLLECTOR CURRENT
BASE EMITTER VOLTAGE
0.01
TEMPERATURE (oC)
COLLECTOR CURRENT (mA)
FIGURE TRANSISTOR (P-N-P) TEMPERATURE
FIGURE (P-N-P) COLLECTOR CURRENT
6-39
CA3096, CA3096A, CA3096C Typical Performance Curves
(Continued)
MAGNITUDE INPUT OFFSET VOLTAGE (mV) 0.01 COLLECTOR CURRENT (mA)
BASE EMITTER VOLTAGE
5mA, VBE/T 0.97mV/oC 1mA, -1.84mV/oC
100µA, -2.2mV/oC
TEMPERATURE (oC)
FIGURE (P-N-P) TEMPERATURE
FIGURE MAGNITUDE INPUT OFFSET VOLTAGE |VIO| COLLECTOR CURRENT N-P-N TRANSISTOR
RSOURCE
MAGNITUDE INPUT OFFSET VOLTAGE (mV)
NOISE FIGURE (dB)
100µA 10µA
0.01
COLLECTOR CURRENT (mA)
0.01
FREQUENCY (kHz)
FIGURE MAGNITUDE INPUT OFFSET VOLTAGE |VIO| COLLECTOR CURRENT P-N-P TRANSISTOR
RSOURCE NOISE FIGURE (dB) 0.01 100µA 10µA
FIGURE NOISE FIGURE FREQUENCY N-P-N TRANSISTORS
NOISE FIGURE (dB)
RSOURCE
10µA 100µA
FREQUENCY (kHz)
0.01
FREQUENCY (kHz)
FIGURE NOISE FIGURE FREQUENCY N-P-N TRANSISTORS
FIGURE NOISE FIGURE FREQUENCY N-P-N TRANSISTORS
6-40
CA3096, CA3096A, CA3096C Typical Performance Curves
NOISE FIGURE (dB) 100µA 10µA 10µA 0.01 100µA
(Continued)
GAIN-BANDWIDTH PRODUCT (MHz) RSOURCE 100k RSOURCE
FREQUENCY (kHz)
COLLECTOR CURRENT (mA)
FIGURE NOISE FIGURE FREQUENCY N-P-N TRANSISTORS
FIGURE GAIN-BANDWIDTH PRODUCT COLLECTOR CURRENT (N-P-N)
CAPACITANCE (pF) INPUT RESISTANCE
1000
1kHz
N-P-N P-N-P
0.01
BIAS VOLTAGE
COLLECTOR CURRENT (mA)
FIGURE CAPACITANCE BIAS VOLTAGE (N-P-N)
FIGURE INPUT RESISTANCE COLLECTOR CURRENT
FORWARD TRANSFER CONDUCTANCE (gFE) FORWARD TRANSFER SUSCEPTANCE (bFE) (mmho)
1kHz
OUTPUT RESISTANCE
P-N-P
N-P-N
100µA 100µA
0.01
FREQUENCY (MHz)
COLLECTOR CURRENT (mA)
FIGURE OUTPUT RESISTANCE COLLECTOR CURRENT
FIGURE FORWARD TRANSCONDUCTANCE FREQUENCY
6-41
CA3096, CA3096A, CA3096C Typical Performance Curves
10mA OUTPUT CONDUCTANCE (gOE) OUTPUT SUSCEPTANCE (bOE) (mmho) INPUT CONDUCTANCE (gIE) INPUT SUSCEPTANCE (bIE) (mmho)
(Continued)
10mA 100µA 10µA
100µA
100µA
100µA 10µA FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE INPUT ADMITTANCE FREQUENCY
RSOURCE
FIGURE OUTPUT ADMITTANCE FREQUENCY
RSOURCE
NOISE FIGURE (dB)
NOISE FIGURE (dB)
10µA 100µA
10µA 100µA
0.01
FREQUENCY (kHz)
0.01
FREQUENCY (kHz)
FIGURE NOISE FIGURE FREQUENCY (P-N-P)
RSOURCE GAIN-BANDWIDTH PRODUCT (MHz)
FIGURE NOISE FIGURE FREQUENCY (P-N-P)
NOISE FIGURE (dB)
10µA 0.01
100µA
FREQUENCY (kHz)
COLLECTOR CURRENT (mA)
FIGURE NOISE FIGURE FREQUENCY (P-N-P)
FIGURE GAIN-BANDWIDTH PRODUCT COLLECTOR CURRENT (P-N-P)
6-42
CA3096, CA3096A, CA3096C Typical Performance Curves
(Continued)
CAPACITANCE (pF)
BIAS VOLTAGE
FIGURE CAPACITANCE BIAS VOLTAGE (P-N-P)
Typical Applications
(SUBSTRATE) 0.1µF NOTE: 10kHz 44003 OUTPUT OUTPUT VOLTAGE 0.1µF CENTER FREQUENCY: 1kHz
FREQUENCY DEVIATION (kHz)
FIGURE FREQUENCY COMPARATOR USING CA3096
FIGURE FREQUENCY COMPARATOR CHARACTERISTICS
SENSOR 120V 6.8k 5.1k 100µF 5.1k
T2300B
LOAD
FIGURE LINE-OPERATED LEVEL SWITCH USING CA3096A CA3096
6-43
CA3096, CA3096A, CA3096C Typical Applications (Continued)
40841 MOSFET
OUTPUT 3.9k
TIME DELAY CHANGES SUPPLY VOLTAGE CHANGE ±10%
FIGURE ONE-MINUTE TIMER USING CA3096A MOSFET
36mV
FIGURE CA3096A SMALL-SIGNAL ZERO VOLTAGE DETECTOR HAVING NOISE IMMUNITY
1.5V 1.5M
LAMP 2158D EQUIVALENT
500k
(SUBSTRATE)
FIGURE TEN-SECOND TIMER OPERATED FROM 1.5V SUPPLY USING CA3096
6-44
CA3096, CA3096A, CA3096C Typical Applications (Continued)
100k INPUT 100k 100k
6.2k
6.2k OUTPUT
NOTES:
operated with either dual supply single supply. Wide-input common mode range -5V. bias current: <1µA.
FIGURE CASCADE DIFFERENTIAL AMPLIFIERS USING CA3096A
VOLTAGE GAIN (dB)
FREQUENCY (kHz) 1000
FIGURE GAIN-FREQUENCY CHARACTERISTICS
6-45
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