General Purpose N-P-N Transistor Array CA3086 consists five gener

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CA3086
General Purpose N-P-N Transistor Array
CA3086 consists five general-purpose silicon n-p-n transistors common monolithic substrate. transistors internally connected form differentially connected pair. transistors CA3086 well suited wide variety applications low-power systems frequencies from 120MHz. They used discrete transistors conventional circuits. However, they also provide very significant inherent advantages unique integrated circuits, such compactness, ease physical handling thermal matching.
March 1993
Applications
Three Isolated Transistors Differentially Connected Transistor Pair Low-Power Applications from General-Purpose Signal Processing Systems Operating 190MHz Range Temperature Compensated Amplifiers Application Note, AN5296 "Application CA3018 Integrated-Circuit Transistor Array"' Suggested Applications
Ordering Information
PART NUMBER CA3086 CA3086M CA3086M96 CA3086F TEMPERATURE RANGE -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC PACKAGE Lead Plastic Lead SOIC Lead SOIC* Lead Ceramic
Denotes Tape Reel
Pinout
CA3086 (PDIP, CDIP, SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
483.2
6-28
Specifications CA3086
Absolute Maximum Ratings
Power Dissipation transistor 300mW Total package +55oC 750mW Above +55oC. .Derate linearly 6.67 mW/oC Junction Temperature +175oC Junction Temperature (Plastic Package) +150oC Lead Temperature (Soldering Sec.). +300oC following ratings apply each transistor device: Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Emitter-to-Base Voltage, VEBO Collector Current, 50mA
Operating Conditions
Ambient Temperature Range Operating. -55oC +125oC Storage -65oC +150oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications
+25oC, Equipment Design LIMITS TEST CONDITIONS 10µA, 1mA, 10µA, 10µA, 10V, 10V,
PARAMETERS Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-Cutoff Current (Figure Collector-Cutoff Current (Figure Forward-Current Transfer Ratio (Figure NOTE:
SYMBOLS V(BR)CBO V(BR)CEO V(BR)ClO V(BR)EBO ICBO ICEO
0.002 (Figure
UNITS
collector each transistor CA3086 isolated from substrate integral diode. substrate (terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. avoid undesirable coupling between transistors, substrate (terminal should maintained either signal (AC) ground. suitable bypass capacitor used establish signal ground.
Electrical Specifications
PARAMETERS
+25oC, Typical Values Intended Only Design Guidance TYPICAL VALUES 0.715 0.800 -1.9 0.23 mV/oC
SYMBOLS
TEST CONDITIONS 10mA 10µA
UNITS
Forward-Current Transfer Ratio (Figure Base-to-Emitter Voltage (Figure
10mA
Temperature Coefficient (Figure Collector-to-Emitter Saturation Voltage Noise Figure (Low Frequency)
VBE/T
1mA, 10mA 1kHz, 100µA,
3.25
6-29
Specifications CA3086
Electrical Specifications
PARAMETERS Low-Frequency, Small-Signal EquivalentCircuit Characteristics: Forward Current-Transfer Ratio (Figure Short-Circuit Input Impedance (Figure Open-Circuit Output Impedance (Figure Open-Circuit Reverse-Voltage Transfer Ratio (Figure Admittance Characteristics: Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure Gain-Bandwidth Product (Figure Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance CEBO CCBO CClO 1MHz,VCE j1.5 mmho +25oC, Typical Values Intended Only Design Guidance (Continued) TYPICAL VALUES
SYMBOLS
TEST CONDITIONS 1kHz,VCE
UNITS
µmho
15.6 10-4
j0.04 0.001 j0.03 Figure
mmho mmho
0.58
Typical Static Characteristics Each Transistor
COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA)
10-1
10-2 10-3 10-4 TEMPERATURE (oC)
10-1 10-2 10-3 AMBIENT TEMPERATURE (oC)
FIGURE ICBO TEMPERATURE
FIGURE ICEO TEMPERATURE
6-30
CA3086 Typical Static Characteristics Each Transistor (Continued)
STATIC FORWARD CURRENT TRANSFER RATIO (hFE) 0.01 EMITTER CURRENT (mA) +25oC BASE-TO-EMITTER VOLTAGE +25oC
0.01
EMITTER CURRENT (mA)
FIGURE
FIGURE
BASE-TO-EMITTER VOLTAGE NORMALIZED PARAMETERS
1kHz +25oC
0.5mA
3.5k 1.88 10-4 15.6µmho
AMBIENT TEMPERATURE (oC)
0.01
COLLECTOR CURRENT (mA)
FIGURE TEMPERATURE
FIGURE NORMALIZED hFE, hIE, hRE,
FORWARD TRANSFER CONDUCTANCE (gFE) SUSCEPTANCE (bFE) (mmhos)
INPUT CONDUCTANCE (gIE) SUSCEPTANCE (bIE) (mmhos)
COMMON EMITTER CIRCUIT, BASE INPUT +25oC,
COMMON EMITTER CIRCUIT, BASE INPUT +25oC,
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE FREQUENCY
FIGURE FREQUENCY
6-31
CA3086 Typical Static Characteristics Each Transistor (Continued)
OUTPUT CONDUCTANCE (gOE) SUSCEPTANCE (bOE) (mmhos) REVERSE TRANSFER CONDUCTANCE (gRE) SUSCEPTANCE (bRE) (mmhos) COMMON EMITTER CIRCUIT, BASE INPUT +25oC, COMMON EMITTER CIRCUIT, BASE INPUT +25oC, SMALL FREQUENCIES LESS THAN 500MHz
-0.5
-1.0
-1.5
-2.0 FREQUENCY (MHz) FREQUENCY (MHz)
FIGURE FREQUENCY
FIGURE FREQUENCY
GAIN BANDWIDTH PRODUCT (MHz)
+25oC 1000
COLLECTOR CURRENT (mA)
FIGURE
6-32

General Purpose N-P-N Transistor Array CA3086 consists five gener

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