General Purpose High Current N-P-N Transistor Array CA3083 versat

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General Purpose High Current N-P-N Transistor Array CA3083 versat

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CA3083
General Purpose High Current N-P-N Transistor Array
CA3083 versatile array five high current 100mA) n-p-n transistors common monolithic substrate. addition, these transistors matched current (i.e. 1mA) applications which offset parameters special importance. Independent connections each transistor plus separate terminal substrate permit maximum flexibility circuit design.
March 1993
Features
High 100mA 50mA) 0.7V Matched Pair (VBE Matched) ±5mV 1mA) 2.5µA Independent Transistors Plus Separate Substrate Connection
Applications
Signal Processing Switching Systems Operating from Lamp Relay Driver Differential Amplifier Temperature Compensated Amplifier Thyristor Firing Application Note AN5296 "Applications CA3018 Circuit Transistor Array" Suggested Applications
Ordering Information
PART NUMBER CA3083 CA3083F CA3083M CA3083M96 TEMPERATURE RANGE +125 +125 +125 +125
PACKAGE Lead Plastic Lead Ceramic Lead Narrow Body SOIC Lead Narrow Body SOIC*
Denotes Tape Reel
Pinout
CA3083 (PDIP, CDIP 150mil SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
481.2
6-24
Specifications CA3083
Absolute Maximum Ratings
+25oC)
Operating Conditions
Operating Temperature Range -55oC +125oC Storage Temperature Range. -65oC +150oC
following ratings apply each transistor device: Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Emitter-to-Base Voltage, VEBO Collector Current (IC) 100mA Base Current (IB) 20mA Power Dissipation Transistor 500mW Total Package 750mW +55oC Derate 6.67mW/oC Junction Temperature +175oC Junction Temperature (Plastic Package) +150oC Lead Temperature (Soldering Sec.). +300oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications +25oC. Equipment Design
LIMITS PARAMETERS EACH TRANSISTOR Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-Cutoff-Current Collector-Cutoff-Current Forward-Current Transfer Ratio (Note (Figure V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICEO ICBO 100µA, 1mA, 100µA, 500µA, 10V, 10V, 10mA 50mA Base-to-Emitter Voltage (Figure Collector-to-Emitter Saturation Voltage (Figures Gain Bandwidth Product 10mA 50mA, 10mA 0.65 0.74 0.40 0.85 0.70 SYMBOL TEST CONDITIONS UNITS
TRANSISTORS Differential Amplifier) Absolute Input Offset Voltage (Figure Absolute Input Offset Current (Figure NOTE: collector each transistor CA3083 isolated from substrate integral diode. substrate must connected voltage which more negative than collector voltage order maintain isolation between transistors provide normal transistor action. avoid undesired coupling between transistors, substrate terminal should maintained either signal (AC) ground. suitable bypass capacitor used establish signal ground. Actual forcing current emitter this test. |VIO| |IIO|
6-25
CA3083 Typical Performance Curves
FORWARD CURRENT TRANSFER RATIO +70oC +25oC BASE-TO-EMITTER VOLTAGE
+25oC +70oC
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE
COLLECTOR-TO-EMITTER SATURATION VOLTAGE +25oC COLLECTOR-TO-EMITTER SATURATION VOLTAGE
FIGURE
+70oC
MAXIMUM TYPICAL COLLECTOR CURRENT (mA)
MAXIMUM TYPICAL
COLLECTOR CURRENT (mA)
FIGURE +25oC
FIGURE +70oC
BASE-TO-EMITTER SATURATION VOLTAGE
ABSOLUTE INPUT OFFSET VOLTAGE (mV) +25oC
+25oC
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE
FIGURE (TRANSISTORS DIFFERENTIAL AMPLIFIER)
6-26
CA3083 Typical Performance Curves (Continued)
ABSOLUTE INPUT OFFSET CURRENT (µA) +25oC
COLLECTOR CURRENT (mA)
FIGURE (TRANSISTORS DIFFERENTIAL AMPLIFIER)
6-27

General Purpose High Current N-P-N Transistor Array CA3083 versat

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