General Purpose High Current N-P-N Transistor Arrays CA3081 CA308
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CA3081, CA3082
General Purpose High Current N-P-N Transistor Arrays
CA3081 CA3082 consist seven high current 100mA) silicon n-p-n transistors common monolithic substrate. CA3081 connected common emitter configuration CA3082 connected common collector configuration. CA3081 CA3082 capable directly driving seven segment displays, light emitting diode (LED) displays. These types also well suited variety other drive applications, including relay control thyristor firing.
March 1993 1994
Features
CA3081 Common Emitter Array CA3082 Common Collector Array Directly Drive Seven Segment Incandescent Displays Light Emitting Diode (LED) Display Transistors Permit Wide Range Applications Either Common Emitter (CA3081) Common Collector (CA3082) Configuration High 100mA VCESAT 50mA)
Ordering Information
PART NUMBER CA3081 CA3081F TEMPERATURE RANGE -55oC +125oC -55oC +125oC -55oC +125oC +125 -55oC +125oC +125 -55oC +125oC +125
PACKAGE Lead Plastic Lead Ceramic Lead Narrow Body SOIC Lead Narrow Body SOIC* Lead Plastic Lead Ceramic Lead Narrow Body SOIC Lead Narrow Body SOIC*
Applications
Drivers Incandescent Display Devices Displays Relay Control Thyristor Firing
CA3081M CA3081M96 CA3082 CA3082F CA3082M CA3082M96
Denotes Tape Reel
Pinouts
CA3081 COMMON EMITTER CONFIGURATION (PDIP, CDIP, SOIC) VIEW
SUBSTRATE
CA3082 COMMON COLLECTOR CONFIGURATION (PDIP, CDIP, SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
480.2
6-21
Specifications CA3081, CA3082
Absolute Maximum Ratings +25oC)
Collector-to-Emitter Voltage (VCEO) Collector-to-Base Voltage (VCBO) Collector-to-Substrate Voltage (VCIO) (Note Emitter-to-Base Voltage (VEBO) Collector Current (IC) 100mA Base Current (IB) 20mA Power Dissipation Transistor 500mW Total Package 750mW Above +55oC. .Derate Linearly 6.67mW/oC Junction Temperature +175oC Junction Temperature (Plastic Package) +150oC Lead Temperature (Soldering Sec.). +300oC
Operating Conditions
Operating Temperature Range -55oC +125oC Storage Temperature Range. -65oC +150oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications
PARAMETERS
Equipment Design +25oC LIMIT SYMBOL V(BR)CBO V(BR)CIO V(BR)CEO V(BR)EBO VBESAT VCESAT 30mA, 50mA, 50mA, ICEO ICBO 10V, 10V, 0.27 TEST CONDITIONS 500µA, 500µA, 1mA, 500µA 0.5V, 30mA 0.8V, 50mA 30mA, 0.87 UNITS
Collector-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Forward Current Transfer Ratio
Base-to-Emitter Saturation Voltage (Figure Collector-to-Emitter Saturation Voltage CA3081, CA3082 CA3081 (Figure CA3082 (Figure Collector Cutoff Current Collector Cutoff Current NOTE:
collector each transistor CA3081 CA3082 isolated from substrate integral diode. substrate must connected voltage which more negative than collector voltage order maintain isolation between transistors provide normal transistor action. avoid undesired coupling between transistors, substrate terminal should maintained either signal (AC) ground. suitable bypass capacitor used establish signal ground.
Typical Performance Curves
FORWARD CURRENT TRANSFER RATIO (hFE) BASE-TO-EMITTER SATURATION VOLTAGE +25oC
+70oC
+25oC
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE FORWARD CURRENT TRANSFER RATIO COLLECTOR CURRENT
FIGURE BASE-TO-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT
6-22
CA3081, CA3082 Typical Performance Curves (Continued)
COLLECTOR-TO-EMITTER SATURATION VOLTAGE COLLECTOR-TO-EMITTER SATURATION VOLTAGE +25oC +70oC
MAXIMUM
MAXIMUM
TYPICAL
TYPICAL
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE COLLECTOR-TO-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT +25oC
FIGURE COLLECTOR-TO-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT +70oC
Typical Read Driver Applications
CA3082 (COMMON COLLECTOR)
LIGHT EMITTING DIODE (LED) 40736R
Resistance determined relationship:
SEGMENT INCANDESCENT DISPLAY (DR2000 SERIES EQUIVALENT) FROM DECODER CA3081 (COMMON EMITTER)
0forV
Where: Input Pulse Voltage Forward Voltage Drop Across Diode FIGURE SCHEMATIC DIAGRAM SHOWING TRANSISTOR CA3081 DRIVING SEGMENT INCANDESCENT DISPLAY FIGURE SCHEMATIC DIAGRAM SHOWING TRANSISTOR CA3082 DRIVING LIGHT EMITTING DIODE (LED)
6-23
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