General Purpose N-P-N Transistor Arrays CA3045 CA3046 each consis

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General Purpose N-P-N Transistor Arrays CA3045 CA3046 each consis

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CA3045, CA3046
General Purpose N-P-N Transistor Arrays
CA3045 CA3046 each consist five general purpose silicon n-p-n transistors common monolithic substrate. transistors internally connected form differentially connected pair. transistors CA3045 CA3046 well suited wide variety applications power systems through range. They used discrete transistors conventional circuits. However, addition, they provide very significant inherent integrated circuit advantages close electrical thermal matching.
March 1993 1994
Features
Matched Transistors: Matched ±5mV; Input Offset Current General Purpose Monolithic Transistors Operation From 120MHz Wide Operating Current Range Noise Figure 3.2dB Typical 1kHz Full Military Temperature Range -55oC +125oC
Applications
Three Isolated Transistors Differentially Connected Transistor Pair Power Applications Frequencies from Through Range Custom Designed Differential Amplifiers Temperature Compensated Amplifiers Application Note, AN5296 "Application CA3018 Integrated-Circuit Transistor Array" Suggested Applications
Ordering Information
PART NUMBER CA3045 CA3045F CA3046 CA3046M CA3046M96 TEMPERATURE RANGE -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC PACKAGE Lead Ceramic Sidebraze Lead Ceramic Lead Plastic Lead SOIC Lead SOIC*
Denotes Tape Reel
Pinout
CA3045, CA3046 (PDIP, CDIP, SOIC) VIEW
DIFFERENTIAL PAIR
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
341.2
6-15
Specifications CA3045, CA3046
Absolute Maximum Ratings
+25oC)
Operating Conditions
Operating Temperature Range -55oC +125oC Storage Temperature Range. .-65oC 150oC
Collector-to-Emitter Voltage (VCEO) Collector-to-Base Voltage (VCBO) Collector-to-Substrate Voltage (VCIO) (Note Emitter-to-Base Voltage (VEBO) Collector Current (IC) 50mA Power Dissipation CA3045 Each Transistor Total Pkg. +75oC. 300mW 750mW Above +75oC Derate Linearly 8mW/oC CA3046, CA3045F Each Transistor Total Pkg. +55oC. 300mW 750mW Above +55oC .Derate Linearly 6.67mW/oC Junction Temperature +175oC Junction Temperature (Plastic Package) +150oC Lead Temperature (Soldering Sec.). +300oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications +25oC, Characteristics apply each transistor CA3045 CA3046 specified.
LIMITS PARAMETERS STATIC CHARACTERISTICS Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current (Figure Collector Cutoff Current (Figure Static Forward Current Transfer Ratio (Static Beta) (Note (Figure V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICBO ICEO 10µA, 1mA, 10µA, 10µA, 10V, 10V, 10mA 10µA Input Offset Current Matched Pair |IIO1 IIO2| (Note (Figure Base-to-Emitter Voltage (Note (Figure 10mA Magnitude Input Offet Voltage Differential Pair |VBE1 VBE2| (Note (Figures Magnitude Input Offset Voltage Isolated Transistors |VBE3 VBE4|, |VBE4 VBE5|, |VBE5 VBE3| (Note Figures Temperature Coefficient Base-to-Emitter Voltage (Figure Collector-to-Emitter Saturation Voltage Temperature Coefficient: Magnitude Input Offset Voltage (Figure 0.002 Fig. 0.715 0.800 0.45 0.45 SYMBOL TEST CONDITIONS UNITS
-1.9
mV/oC
VCES
1mA, 10mA
0.23
µV/oC
6-16
Specifications CA3045, CA3046
Electrical Specifications +25oC, Characteristics apply each transistor CA3045 CA3046 specified. (Continued)
LIMITS PARAMETERS DYNAMIC CHARACTERISTICS Frequency Noise Figure (Figure Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure Short Circuit Input Impedance (Figure Open Circuit Output Impedance (Figure Open Circuit Reverse Voltage Transfer Ratio (Figure Admittance Characteristics Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure Gain Bandwidth Product (Figure Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance NOTE: collector each transistor CA3045 CA3046 isolated from substrate integral diode. substrate (Terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. Actual forcing current emitter this test. 1kHz, 1kHz, 1kHz, 1kHz, j1.5 j0.04 0.001 j0.03 Fig. 0.58 1kHz, 1kHz, 1kHz, 1kHz, 15.6
SYMBOL
TEST CONDITIONS
UNITS
1kHz, 100µA, Source Resistance
3.25
µmho
Typical Performance Curves
COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) 10-1
10-2 10-3
10-1 10-2 10-3
10-4 AMBIENT TEMPERATURE (oC)
AMBIENT TEMPERATURE (oC)
FIGURE TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT TEMPERATURE EACH TRANSISTOR
FIGURE TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT TEMPERATURE EACH TRANSISTOR
6-17
CA3045, CA3046 Typical Performance Curves (Continued)
STATIC FORWARD CURRENT TRANSFER RATIO (hFE)
+25oC
BETA RATIO INPUT OFFSET CURRENT (µA)
+25oC
0.01
0.01
0.01
EMITTER CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO BETA RATIO EMITTER CURRENT
+25oC
FIGURE TYPICAL INPUT OFFSET CURRENT MATCHED TRANSISTOR PAIR Q1Q2 COLLECTOR CURRENT
BASE-TO-EMITTER VOLTAGE INPUT OFFSET VOLTAGE (mV) 0.5mA
BASE-TO-EMITTER VOLTAGE
INPUT OFFSET VOLTAGE
0.01
EMITTER CURRENT (mA)
TEMPERATURE (oC)
FIGURE TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTICS INPUT OFFSET VOLTAGE DIFFERENTIAL PAIR PAIRED ISOLATED TRANSISTORS EMITTER CURRENT
4.00 INPUT OFFSET VOLTAGE (mV) 10mA
FIGURE TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC TEMPERATURE EACH TRANSISTOR
NOISE FIGURE (dB)
+25oC
3.00 2.00 0.75 0.50 0.25 0.1mA
0.1kHz 1kHz 10kHz
TEMPERATURE (oC)
0.01
COLLECTOR CURRENT (mA)
FIGURE TYPICAL INPUT OFFSET VOLTAGE CHARACTERISTICS DIFFERENTIAL PAIR PAIRED ISOLATED TRANSISTORS TEMPERATURE
FIGURE TYPICAL NOISE FIGURE COLLECTOR CURRENT
6-18
CA3045, CA3046 Typical Performance Curves (Continued)
1000 +25oC NOISE FIGURE (dB) 10000 +25oC
NOISE FIGURE (dB)
0.1kHz 1kHz
0.1kHz 1kHz 10kHz
10kHz
0.01
COLLECTOR CURRENT (mA)
0.01
COLLECTOR CURRENT (mA)
FIGURE TYPICAL NOISE FIGURE COLLECTOR CURRENT
FIGURE TYPICAL NOISE FIGURE COLLECTOR CURRENT
FORWARD TRANSFER CONDUCTANCE (gFE) SUSCEPTANCE (bFE) (mmhos)
1kHz +25oC
NORMALIZED PARAMETERS
3.5k 1.88 10-4 15.6µmho
COMMON EMITTER CIRCUIT, BASE INPUT +25oC,
0.01 COLLECTOR CURRENT (mA)
FREQUENCY (MHz)
FIGURE TYPICAL NORMALIZED FORWARD CURRENT TRANSFER RATIO, SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO COLLECTOR CURRENT
FIGURE TYPICAL FORWARD TRANSFER ADMITTANCE FREQUENCY
COMMON EMITTER CIRCUIT, BASE INPUT INPUT CONDUCTANCE (gIE) SUSCEPTANCE (bIE) (mmhos) OUTPUT CONDUCTANCE (gOE) SUSCEPTANCE (bOE) (mmhos) +25oC,
COMMON EMITTER CIRCUIT, BASE INPUT +25oC,
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE TYPICAL INPUT ADMITTANCE FREQUENCY
FIGURE TYPICAL OUTPUT ADMITTANCE FREQUENCY
6-19
CA3045, CA3046 Typical Performance Curves (Continued)
REVERSE TRANSFER CONDUCTANCE (gRE) SUSCEPTANCE (bRE) (mmhos) COMMON EMITTER CIRCUIT, BASE INPUT +25oC, SMALL FREQUENCIES LESS THAN 500MHz +25oC
GAIN BANDWIDTH PRODUCT (MHz)
1000
-0.5
-1.0
-1.5
-2.0
FREQUENCY (MHz)
COLLECTOR CURRENT (mA)
FIGURE TYPICAL REVERSE TRANSFER ADMITTANCE FREQUENCY
FIGURE TYPICAL GAIN BANDWIDTH PRODUCT COLLECTOR CURRENT
6-20

General Purpose N-P-N Transistor Arrays CA3045 CA3046 each consis

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