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Diode Array CA3039 consists ultra-fast, capacitance diodes common


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CA3039
Diode Array
CA3039 consists ultra-fast, capacitance diodes common monolithic substrate. Integrated circuit construction assures excellent static dynamic matching diodes, making array extremely useful wide variety applications communication switching systems. Five diodes independently accessible, sixth shares common terminal with substrate. applications such balanced modulators ring modulators where capacitive balance important, substrate should returned potential which significantly more negative (with respect active diodes) than peak signal applied.
March 1993
Features
Matched Diodes Common Substrate Excellent Reverse Recovery Time Typical Matched Monolithic Construction Matched Within Diode Capacitance 0.65pF Typical
Applications
Ultra-Fast Capacitance Matched Diodes Applications Communications Switching Systems Balanced Modulators Demodulators Ring Modulators High Speed Diode Gates Analog Switches
Ordering Information
PART NUMBER CA3039 CA3039M CA3039M96 TEMPERATURE RANGE +125 +125 +125
PACKAGE Lead SOIC Lead SOIC*
Denotes Tape Reel
Pinouts
CA3039 (SOIC) VIEW CA3039 (TO-5 CAN) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
343.2
6-11
Specifications CA3039
Absolute Maximum Ratings
Inverse Voltage (PIV) for: 0.5V Diode-to-Substrate Voltage (VDI) .+20V, (Terminal Terminal Forward Current (IF) 25mA Recurrent Forward Current (IF) 100mA Forward Surge Current (IF(SURGE)) 100mA Power Dissipation Diode Unit 100mW Total Device 600mW +55oC .Derate Linearly 5.7mW/oC Junction Temperature +175oC Junction Temperature (Plastic Package) +150oC Lead Temperature (Soldering Sec.). +300oC
Operating Conditions
Operating Temperature Range -55oC +125oC Storage Temperature Range. -65oC +150oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications +25oC. Characteristics apply each diode unit, Unless Otherwise Specified
LIMITS PARAMETER Forward Voltage Drop (Figure SYMBOL TEST CONDITIONS 50µA 10mA Reverse Breakdown Voltage Reverse Breakdown Voltage Between Diode Unit Substrate Reverse (Leakage) Current (Figure Reverse (Leakage) Current Between Diode Unit Substrate (Figure Magnitude Diode Offset Voltage (Note (Figure Temperature Coefficient |VF1 VF2| (Figure V(BR)R V(BR)R -10µA -10µA -10V 0.65 0.73 0.76 0.81 0.016 0.022 0.69 0.78 0.80 0.90 UNITS µV/oC
Temperature Coefficient Forward Drop (Figure Forward Voltage Drop Anode-toSubstrate Diode (DS) Reverse Recovery Time Diode Resistance (Figure Diode Capacitance (Figure Diode-to-Substrate Capacitance (Figure NOTE:
-1.9
mV/oC
10mA, -10mA 1kHz, -2V,
0.65 0.65
Magnitude Diode Offset Voltage difference Forward Voltage Drops diode units.
6-12
CA3039 Typical Performance Curves
+25oC DIODE OFFSET VOLTAGE (mV) REVERSE CURRENT (nA)
FORWARD VOLTAGE
FORWARD VOLTAGE DROP (VF)
DIODE OFFSET
0.01
0.01
FORWARD CURRENT (mA)
0.001
TEMPERATURE (oC)
FIGURE FORWARD VOLTAGE DROP (ANY DIODE) DIODE OFFSET VOLTAGE FORWARD CURRENT
FIGURE REVERSE (LEAKAGE) CURRENT TEMPERATURE
-10V
(mV)
10mA 0.1mA
REVERSE CURRENT (nA)
0.01
0.001
DIODE OFFSET VOLTAGE
TEMPERATURE (oC)
TEMPERATURE (oC)
FIGURE REVERSE (LEAKAGE) CURRENT BETWEEN SUBSTRATE TEMPERATURE
FORWARD VOLTAGE
FIGURE DIODE OFFSET VOLTAGE (ANY DIODE) TEMPERATURE
1000 +25oC 1kHz
DIODE RESISTANCE
TEMPERATURE (oC)
0.01
FORWARD CURRENT (mA)
FIGURE FORWARD VOLTAGE DROP (ANY DIODE) TEMPERATURE
FIGURE DIODE RESISTANCE (ANY DIODE) FORWARD CURRENT
6-13
CA3039 Typical Performance Curves (Continued)
DIODE SUBSTRATE CAPACITANCE (pF) +25oC +25oC
DIODE CAPACITANCE (pF)
REVERSE VOLTAGE ACROSS DIODE REVERSE VOLTAGE BETWEEN TERMINALS SUBSTRATE (TERMINAL
FIGURE DIODE CAPACITANCE REVERSE VOLTAGE
FIGURE DIODE-TO-SUBSTRATE CAPACITANCE REVERSE VOLTAGE
6-14

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