General Purpose Transistor Arrays CA3018 CA3018A consist four gen
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CA3018
General Purpose Transistor Arrays
CA3018 CA3018A consist four general purpose silicon n-p-n transistors common monolithic substrate. four transistors connected Darlington configuration. substrate connected separate terminal maximum flexibility. transistors CA3018 CA3018A well suited wide variety applications power systems through range. They used discrete transistors conventional circuits addition they provide advantages close electrical thermal matching inherent integrated circuit construction. CA3018A similar CA3018 features tighter control current gain, leakage, offset parameters making suitable more critical applications requiring premium performance.
March 1993
Features
Matched Monolithic General Purpose Transistors Matched .±10% Matched CA3018A ±2mV CA3018 ±5mV Operation From 120MHz Wide Operating Current Range CA3018A Performance Characteristics Controlled from 10µA 10mA Noise Figure 3.2dB Typical 1kHz Full Military Temperature Range +125
Applications
Isolated Transistors Darlington Connected Transistor Pair Power Applications Frequencies from through Range Custom Designed Differential Amplifiers
Ordering Information
PART NUMBER CA3018 TEMPERATURE RANGE -55oC +125oC -55oC +125oC PACKAGE
Temperature Compensated Amplifiers Application Note, AN5296 "Application CA3018 Integrated Circuit Transistor Array" Suggested Applications
CA3018A
Pinout
CA3018, CA3018A (TO-5 CAN) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
338.2
Specifications CA3018, CA3018A
Absolute Maximum Ratings +25oC)
CA3018 CA3018A Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Emitter-to-Base Voltage, VEBO Collector Current, 50mA 50mA Power Dissipation Transistor 300mW Total Package 450mW +85oC Derate 5mW/oC Junction Temperature +175oC Lead Temperature (Soldering Sec.). +300oC
Operating Conditions
Operating Temperature Range -55oC +125oC Storage Temperature Range. -65oC +150oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications +25oC
LIMITS CA3018 PARAMETERS STATIC CHARACTERISTICS Collector Cutoff Current (Figure Collector Cutoff Current (Figure Collector Cutoff Current Darlington Pair Collector-to-Emitter Breakdown Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Collector-to-Emitter Saturation Voltage Static Forward Current Transfer Ratio (Note (Figure ICBO ICEO ICEOD V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CIO VCES 10V, 10V, 10V, 1mA, 10µA, 10µA, 10µA, 1mA, 10mA 10mA 10µA Magnitude Static-Beta Ratio (Isolated Transistors (Figure Static Forward Current Transfer Ratio Darlington Pair (Figure Base-to-Emitter Voltage (Figure Input Offset Voltage (Figures hFED 100µA 10mA 0.002 Fig. 0.23 0.97 0.002 Fig. 0.23 0.97 SYMBOL TEST CONDITIONS CA3018A UNITS
1500
5400 0.715 0.800 0.48
2000 1000 0.600
5400 2800 0.715 0.800 0.48
0.800 0.900
Specifications CA3018, CA3018A
Electrical Specifications +25oC (Continued)
LIMITS CA3018 PARAMETERS Temperature Coefficient: Base-to-Emitter Voltage (Figure Base (Q3)-to-Emitter (Q4) Voltage Darlington Pair (Figure Temperature Coefficient: Base-to-Emitter Voltage Darlington Pair (Figure Temperature Coefficient: Magnitude Input Offset Voltage DYNAMIC CHARACTERISTICS Frequency Noise Figure (Figures Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure Short Circuit Input Impedance (Figure Open Circuit Output Impedance (Figure Open Circuit Reverse Voltage Transfer Ratio (Figure Admittance Characteristics Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure Gain Bandwidth Product (Figure Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance NOTE: collector each transistor CA3018 CA3018A isolated from substrate integral diode. substrate (Terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. Actual forcing current emitter this test. 1MHz, 1MHz, 1MHz, 1MHz, 0.58 j1.5 j0.04 0.001 j0.03 j1.5 j0.04 0.001 j0.03 mmho mmho mmho mmho 0.58 1kHz, 1kHz, 1kHz, 1kHz, 15.6 10-4 15.6 10-4 µmho 1kHz, 100µA, Source Resistance 3.25 3.25 SYMBOL TEST CONDITIONS -1.9 CA3018A -1.9 UNITS mV/oC
VBED (V9-1)
10mA
1.46 1.32
1.10
1.46 1.32
1.60 1.50
mV/oC
-6V,
µV/oC
Figure
CA3018, CA3018A Typical Performance Curves
COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA)
10-1
10-2 10-3
10-1 10-2 10-3
10-4 AMBIENT TEMPERATURE (oC)
AMBIENT TEMPERATURE (oC)
FIGURE TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT TEMPERATURE
0.01
FIGURE TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT TEMPERATURE
STATIC FORWARD CURRENT TRANSFER RATIO DARLINGTON PAIR (hFED)
+25oC
8000 7000 6000 5000 4000 3000 2000 1000
STATIC FORWARD CURRENT TRANSFER RATIO (hFE)
+25oC
BETA RATIO
EMITTER CURRENT (mA)
EMITTER CURRENT (mA)
FIGURE TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO BETA RATIO TRANSISTORS EMITTER CURRENT
BASE-TO-EMITTER VOLTAGE
FIGURE TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO DARLINGTON CONNECTED TRANSISTORS EMITTER CURRENT
BASE-TO-EMITTER VOLTAGE
+25oC
INPUT OFFSET VOLTAGE (mV)
0.5mA
|VBE1 VBE2| 0.01
EMITTER CURRENT (mA)
AMBIENT TEMPERATURE (oC)
FIGURE TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTIC INPUT OFFSET VOLTAGE EMITTER CURRENT
FIGURE TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC EACH TRANSISTOR TEMPERATURE
CA3018, CA3018A Typical Performance Curves (Continued)
OFFSET VOLTAGE (mV) 0.75 0.50 0.25 0.1mA AMBIENT TEMPERATURE (oC) EMITTER CURRENT (mA) BASE-TO-EMITTER VOLTAGE DARLINGTON PAIR 10mA +25oC
FIGURE TYPICAL OFFSET VOLTAGE CHARACTERISTIC TEMPERATURE
FIGURE8. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC DARLINGTON PAIR EMITTER CURRENT
+25oC
BASE-TO-EMITTER VOLTAGE DARLINGTON PAIR
NOISE FIGURE (dB)
1.75 1.50 0.5mA 1.25
0.1kHz 1kHz
10kHz
0.75 0.01 COLLECTOR CURRENT (mA) AMBIENT TEMPERATURE (oC)
FIGURE9. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC DARLINGTON PAIR TEMPERATURE
1000 +25oC
FIGURE NOISE FIGURE COLLECTOR CURRENT,
NOISE FIGURE (dB)
NOISE FIGURE (dB)
10000 +25oC
0.1kHz 1kHz
0.1kHz 1kHz 10kHz
10kHz
0.01
COLLECTOR CURRENT (mA)
0.01
COLLECTOR CURRENT (mA)
FIGURE NOISE FIGURE COLLECTOR CURRENT,
FIGURE NOISE FIGURE COLLECTOR CURRENT,
CA3018, CA3018A Typical Performance Curves (Continued)
FORWARD TRANSFER CONDUCTANCE (gFE) SUSCEPTANCE (bFE) (mmhos) 1kHz +25oC COMMON EMITTER CIRCUIT, BASE INPUT +25oC,
NORMALIZED PARAMETERS
3.5k 1.88 10-4 15.6µmho
COLLECTOR CURRENT (mA)
0.01
FREQUENCY (MHz)
FIGURE PARAMETERS COLLECTOR CURRENT
INPUT CONDUCTANCE (gIE) SUSCEPTANCE (bIE) (mmhos)
FIGURE FORWARD TRANSFER ADMITTANCE (YFE)
OUTPUT CONDUCTANCE (gOE) SUSCEPTANCE (bOE) (mmhos) COMMON EMITTER CIRCUIT, BASE INPUT +25oC,
COMMON EMITTER CIRCUIT, BASE INPUT +25oC,
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE INPUT ADMITTANCE (YIE)
REVERSE TRANSFER CONDUCTANCE (gRE) SUSCEPTANCE (bRE) (mmhos) COMMON EMITTER CIRCUIT, BASE INPUT +25oC, SMALL FREQUENCIES LESS THAN 500MHz
FIGURE OUTPUT ADMITTANCE (YOE)
GAIN BANDWIDTH PRODUCT (MHz)
+25oC 1000 COLLECTOR CURRENT (mA)
-0.5
-1.0
-1.5
-2.0
FREQUENCY (MHz)
FIGURE REVERSE TRANSFER ADMITTANCE (YRE)
FIGURE TYPICAL GAIN BANDWIDTH PRODUCT (fT) COLLECTOR CURRENT
6-10
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