BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specif

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BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specif

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BF992; BF992R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data April 1991 File under Discrete Semiconductors, SC07 1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
APPLICATIONS applications such television tuners tuners with supply voltage. device also suitable professional communications equipment. DESCRIPTION Depletion type field-effect transistor plastic micro-miniature SOT143 SOT143R package with source substrate interconnected. transistors protected against excessive input voltage surges integrated back-to-back diodes between gates source. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
view Marking code: M92.
handbook, halfpage
BF992; BF992R
MAM039
Fig.1
Simplified outline (SOT143) symbol; BF992.
handbook, halfpage
PINNING SYMBOL source drain gate gate
view Marking code: M52.
DESCRIPTION
MAM040
Fig.2
Simplified outline (SOT143R) symbol; BF992R.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s 1996 PARAMETER drain-source voltage (DC) drain current (DC) total power dissipation forward transfer admittance input capacitance gate reverse transfer capacitance noise figure operating junction temperature Tamb kHz; VG2-S MHz; VG2-S MHz; VG2-S VG2-S CONDITIONS TYP. MAX. UNIT
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL ±IG1 ±IG2 Ptot Tstg Note Device mounted ceramic substrate, PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature Tamb Fig.3; note CONDITIONS
BF992; BF992R
MIN.
MAX. +150
UNIT
MLA198
handbook, halfpage
Ptot (mW)
Tamb
BF992. BF992R.
Fig.3 Power derating curves.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF992 BF992R Note Device mounted ceramic substrate, STATIC CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S IG1-SS VG1-S IG2-SS VG2-S VG1-S VG2-S VG1-S VG1-S VG2-S PARAMETER thermal resistance from junction ambient free CONDITIONS note
BF992; BF992R
VALUE
UNIT
MIN.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage ±V(BR)G2-SS gate 2-source breakdown voltage -V(P)G1-S -V(P)G2-S ±IG1-SS ±IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage gate cut-off current gate cut-off current
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance reverse transfer capacitance noise figure MHz; CONDITIONS MIN. TYP. MAX. UNIT
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF992; BF992R
handbook, halfpage
MGE797
(mA)
handbook, halfpage
MGE799
4V3V VG2-S
VG1-S
(mA)
-0.1 -0.2 -0.3
-0.4 -0.5 -0.6
VG1-S
VG2-S
Fig.4 Output characteristics; typical values.
Fig.5 Transfer characteristics; typical values.
handbook, halfpage
MGE798
handbook, halfpage
MGE800
|yfs| (mS)
(mS)
VG2-S
VG2-S (mA)
VG1-S
Fig.6
Forward transfer admittance function drain current; typical values.
Fig.7
Forward transfer admittance function gate 1-source voltage; typical values.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF992; BF992R
handbook, halfpage (mS)
MGE794
MGE793
handbook, halfpage
(mS)
10-1 10-1
10-2
(MHz)
10-2 (MHz)
VG2-S Tamb
VG2-S Tamb
Fig.8
Input admittance function frequency; typical values.
Fig.9
Output admittance function frequency; typical values.
handbook, halfpage
MGE795
(mS)
handbook, halfpage
MGE796
(µS)
-brs
-bfs
(MHz)
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.10 Forward transfer admittance function frequency; typical values.
Fig.11 Reverse transfer admittance function frequency; typical values.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
PACKAGE OUTLINES
BF992; BF992R
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.12 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090
0.48 0.38
0.88 0.78
MBC844
VIEW
Dimensions
Fig.13 SOT143R.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF992; BF992R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996

BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specif

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