General Power Modules Transistors Mobile Phones 1996 File under D
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General Power Modules Transistors Mobile Phones
1996 File under Discrete Semiconductors, SC09
Philips Semiconductors
Power Modules Transistors Mobile Phones
QUALITY Total Quality Management Philips Semiconductors Quality Company, renowned high quality products service. keep alive this tradition constantly aiming towards ultimate standard, that zero defects. This guided Total Quality Management (TQM) system, basis which described following paragraphs. QUALITY ASSURANCE Based 9000 standards, customer standards such Ford MDQ. factories certified 9000 external inspectorates. PARTNERSHIPS WITH CUSTOMERS co-operations, design-in agreements, ship-to-stock, just-in-time self-qualification programmes, application support. PARTNERSHIPS WITH SUPPLIERS Ship-to-stock, statistical process control 9000 audits. QUALITY IMPROVEMENT PROGRAMME Continuous process system improvement, design improvement, complete statistical process control, realization final objective zero defects, logistics improvement ship-to-stock just-in-time agreements. Advanced quality planning During design development products processes, quality built-in advanced quality planning. Through failure-mode-and-effect analysis critical parameters detected measures taken ensure good performance these parameters. capability process steps also planned this phase. Product conformance assurance product conformance integral part quality assurance (QA) practice. This achieved Incoming material management through partnerships with suppliers. In-line quality assurance monitor process reproducibility during manufacture initiate necessary corrective action. Critical process steps 100% under statistical process control.
General
Acceptance tests finished products verify conformance with device specification. test results used quality feedback corrective actions. inspection test requirements detailed general quality specifications. Periodic inspections monitor measure conformance products. Product reliability With increasing complexity Original Equipment Manufacturer (OEM) equipment, component reliability must extremely high. research laboratories development departments study failure mechanisms semiconductors. Their studies result design rules process optimization highest built-in product reliability. Highly accelerated tests applied products reliability evaluation. Rejects from reliability tests from customer complaints submitted failure analysis, result corrective action. Customer responses quality improvement depends joint action with customer. need customer's inputs invite constructive comments aspects performance. Please contact local sales representative. Recognition high quality products services demonstrated many Quality Awards granted major customers international organizations. ELECTRON TYPE NUMBERING SYSTEM Basic type number This type designation code applies discrete semiconductor devices (not integrated circuits), multiples such devices, semiconductor chips Darlington transistors. FIRST LETTER first letter gives information about material active part device. Germanium other material with band Silicon other material with band Gallium arsenide (GaAs) other material with band more
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
Compound materials, e.g. cadmium sulphide. Version letter
General
SECOND LETTER second letter indicates function which device primarily designed. same letter used multi-chip devices with similar elements. following list power types defined j-mb power types j-mb K/W. Diode; signal, power Diode; variable capacitance Transistor; power, audio frequency Transistor; power, audio frequency Diode; tunnel Transistor; power, high frequency Multiple dissimilar devices/miscellaneous devices; e.g. oscillators. Also with special third letter; under Section "Serial number" Diode; magnetic sensitive Transistor; power, high frequency Photocoupler Radiation detector; e.g. high sensitivity photo-transistor; with special third letter Radiation generator; e.g. LED, laser; with special third letter Control switching device; e.g. thyristor, power; with special third letter Transistor; power, switching Control switching device; e.g. thyristor, power; with special third letter Transistor; power, switching Surface acoustic wave device Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference regulator, transient suppressor diode; with special third letter.
letter added basic type number indicate minor electrical mechanical variants basic type. RATING SYSTEMS rating systems described those recommended publication number 134. Definitions terms used ELECTRONIC DEVICE electronic tube valve, transistor other semiconductor device. This definition excludes inductors, capacitors, resistors similar components. CHARACTERISTIC characteristic inherent measurable property device. Such property electrical, mechanical, thermal, hydraulic, electro-magnetic nuclear, expressed value stated recognized conditions. characteristic also related values, usually shown graphical form. BOGEY ELECTRONIC DEVICE electronic device whose characteristics have published nominal values type. bogey electronic device particular application obtained considering only those characteristics that directly related application. RATING value that establishes either limiting capability limiting condition electronic device. determined specified values environment operation, stated suitable terms. Limiting conditions either maxima minima. RATING SYSTEM principles upon which ratings established which determine their interpretation. rating system indicates division responsibility between device manufacturer circuit designer, with object ensuring that working conditions exceed ratings. Absolute maximum rating system Absolute maximum ratings limiting values operating environmental conditions applicable electronic
SERIAL NUMBER number comprises three figures running from devices primarily intended consumer equipment, letter etc.) figures running from devices primarily intended industrial professional equipment.(1)
When supply these serial numbers exhausted, serial number expanded three figures industrial types four figures consumer types.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
device specified type, defined published data, which should exceeded under worst probable conditions. These values chosen device manufacturer provide acceptable serviceability device, taking responsibility equipment variations, environmental variations, effects changes operating conditions variations characteristics device under consideration other electronic devices equipment. equipment manufacturer should design that, initially throughout life device, absolute maximum value intended service exceeded with device, under worst probable operating conditions with respect supply voltage variation, equipment component variation, equipment control adjustment, load variations, signal variation, environmental conditions, variations characteristics device under consideration other electronic devices equipment. Design maximum rating system Design maximum ratings limiting values operating environmental conditions applicable bogey electronic device specified type defined published data, should exceeded under worst probable conditions. These values chosen device manufacturer provide acceptable serviceability device, taking responsibility effects changes operating conditions variations characteristics electronic device under consideration. equipment manufacturer should design that, initially throughout life device, design maximum value intended service exceeded with bogey electronic device, under worst probable operating conditions with respect supply voltage variation, equipment component variation, variation characteristics other devices equipment, equipment control adjustment, load variation, signal variation environmental conditions. Design centre rating system Design centre ratings limiting values operating environmental conditions applicable bogey electronic device specified type defined published data, should exceeded under normal conditions. These values chosen device manufacturer provide acceptable serviceability device average 1996
General
applications, taking responsibility normal changes operating conditions rated supply voltage variation, equipment component variation, equipment control adjustment, load variation, signal variation, environmental conditions, variations characteristics electronic devices. equipment manufacturer should design that, initially, design centre value intended service exceeded with bogey electronic device equipment operating stated normal supply voltage. LETTER SYMBOLS letter symbols transistors detailed this section based publication number 148. Basic letters representation currents, voltages powers, lower-case letter symbols used indicate instantaneous values that vary with time. other values represented upper-case letters. Electrical parameters(1) external circuits circuits which device forms only part represented upper-case letters. Lower-case letters used representation electrical parameters inherent device. Inductances capacitances always represented upper-case letters. following list basic letter symbols used with semiconductor devices: Susceptance (imaginary part admittance) Capacitance Conductance (real part admittance) Hybrid parameter Current Inductance Power Resistance (real part impedance) Voltage Reactance (imaginary part impedance) Admittance Impedance.
purpose this publication, term `electrical parameters' applies four-pole matrix parameters, elements electrical equivalent circuits, electrical impedances admittances, inductances capacitances.
Philips Semiconductors
Power Modules Transistors Mobile Phones
Subscripts Upper-case subscripts used indication Continuous (DC) values (without signal), e.g. Instantaneous total values, e.g. Average total values, e.g. IB(AV) Peak total values, e.g. Root-mean-square total values, e.g. IB(RMS). Lower-case subscripts used indication values applying varying component alone: Instantaneous values, e.g. Root-mean-square values, e.g. Ib(rms) Peak values, e.g. Average values, e.g. Ib(av). following list subscripts used with basic letter symbols semiconductor devices: (AV), (av) (BO) (BR) case j-mb (min) (max) anode ambient average value base breakover breakdown case collector controllable drain emitter fall, forward forward transfer) gate holding heatsink input junction ambient junction mounting base cathode load peak value minimum maximum mounting base first subscript: reverse reverse transfer), rise. second subscript: SUPPLY VOLTAGES CURRENTS TRANSISTOR VOLTAGES (OV)
General
repetitive, recovery. third subscript: with specified resistance between terminal mentioned reference terminal Overload Pulse Turn-off first subscript: reverse reverse transfer), rise. second subscript: repetitive, recovery. third subscript: with specified resistance between terminal mentioned reference terminal first subscript: series, source, storage, stray, switching. second subscript: surge (non-repetitive). third subscript: short circuit between terminal mentioned reference terminal Storage Thermal Threshold Total Working Specified circuit Reference regulator (zener) Input (four-pole matrix) Output (four-pole matrix).
(RMS), (rms) Root-mean-square value
Applications examples TRANSISTOR CURRENTS first subscript indicates terminal carrying current (conventional current flow from external circuit into terminal positive). Examples: ibm.
voltage indicated first subscripts: first identifies terminal which voltage measured second reference terminal circuit node. second subscript omitted when there possibility confusion. Examples: VBE, vBE, vbe, Vbem.
Supply voltages supply currents indicated repeating appropriate terminal subscript.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
Examples: VCC; IEE. reference terminal indicated third subscript. Example: VCCE. DEVICES WITH MORE THAN TERMINAL SAME KIND device more than terminal same kind, subscript formed appropriate letter terminal, followed number. Hyphens used avoid confusion multiple subscripts. Examples: VB2-E Continuous (DC) current flowing into second base terminal Continuous (DC) voltage between terminals second base emitter.
General
Small-signal value input impedance. more than subscript used, subscripts which choice style allowed, subscripts chosen upper-case lower-case. Examples: hFE, yRE, hfe. FOUR-POLE MATRIX PARAMETERS first letter subscript double numeric subscript) indicates input, output, forward transfer reverse transfer. Examples: h11), h22), h21), h12). further subscript used identification circuit configuration. When confusion possible, this further subscript omitted. Examples: h21e), h21E). DISTINCTION BETWEEN REAL IMAGINARY PARTS necessary distinguish between real imaginary parts electrical parameters, additional subscripts used. basic symbols real imaginary parts exist, these used. Examples: jXi, jbfe. such symbols exist suitable, notation shown following examples used. Examples:
MULTIPLE DEVICES multiple unit devices, subscripts modified number preceding letter subscript. Hyphens used avoid confusion multiple subscripts. Examples: V1C-2C Continuous (DC) current flowing into collector terminal second unit Continuous (DC) voltage between collector terminals first second units.
ELECTRICAL PARAMETERS upper-case variant subscript used designation static (DC) values. Examples: Static value forward current transfer common-emitter configuration current gain) value external emitter resistance.
(hib) etc. real part (hib) etc. imaginary part hib.
static value slope line from origin operating point appropriate characteristic curve, i.e. quotient appropriate electrical quantities operating point. lower-case variant subscript used designation small-signal values. Examples: Small-signal value short-circuit forward current transfer ratio common-emitter configuration
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
TAPE REEL PACKING Packing types Table Packing quantities reel TAPE WIDTH (mm) REEL SIZE (mm) QUANTITY REEL 2500 3000
General
PACKAGE SOT96 (SO8) SOT223 SOT321A SOT321B Note
12NC (note ends with: .118 .115 .135 .135
12NC Philips twelve-digit ordering code.
direction unreeling
MBE546
dimensions Table Tolerance over pitches: ±0.2
Fig.1 Specification tape (SOT96).
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
General
direction unreeling
MEA467
dimensions Table Tolerance over pitches: ±0.2
Fig.2 Specification tape (SOT223).
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
Table Tape dimensions DIMENSION (Figs Overall dimensions Sprocket holes; note Relative placement compartment Compartment Cover tape; note Carrier tape Notes Tolerance over pitches ±0.2 cover tape shall overlap tape sprocket holes. 12.0 <0.2 <0.3 ±0.2 <9.5 <0.1 ±0.1 ±0.05 1.75 +0.1/-0 ±0.1 ±0.1 12.0 <2.4 >0.75 ±0.2 CARRIER TAPE
General
TOLERANCE
Compartment dimensions depend package size. Maximum clearance between device compartment minimum clearance ensures that device totally restrained within compartment. >1.5 <15° ±0.1
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
General
handbook, full pagewidth
1.75
0.25 0.05
40.4 22.30
direction unreeling
MBH494
Fig.3 Specification tape (SOT321A).
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
General
handbook, full pagewidth
1.75
0.25 0.05
40.4 22.30
direction unreeling
MBH498
Fig.4 Specification tape (SOT321B).
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
handbook, full pagewidth
General
trailer
leader fixing tape
MEA942
dimensions Table
Fig.5 Reel specification.
Table
Reel dimensions CARRIER TAPE TOLERANCE CARRIER TAPE +2/-0 ±1.5 ±1.5 TOLERANCE
DIMENSION (see Fig.5) Flange slot Note
180(1) 12.4
±0.5 +0.5/-0.1 18.0+0.2 ±1.5 +0.15/-0.2 ±0.2 ±0.5
44.4
12.75
120°
120°
Large reel diameter depends individual package (286 350). 1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
MOUNTING SOLDERING Introduction This chapter gives overview mounting soldering methods which applied transistors, modules, Flange mounted modules, which present this handbook. Surface mounting techniques transistors reflow soldering recommended. modules only reflow soldering allowed. Surface mounting techniques complex this chapter provides only simplified overview subject. Reflow soldering SOLDER PASTE Most reflow soldering techniques utilize paste that mixture flux solder. solder paste applied substrate before components placed. sufficient viscosity hold components place and, therefore, application adhesive required. Drying solder paste preheating increases viscosity prevents tendency components become displaced during soldering process. Preheating also minimizes thermal shock drives flux solvents.
General
transfer
picks droplet solder paste from reservoir transfers surface substrate component. multi-pin arrangement with pins positioned match substrate possible this speeds process time. REFLOW TECHNIQUES
Thermal conduction
prepared substrates carried conveyor belt, first through preheating stage then through soldering stage. Heat transferred substrate conduction through belt. Figure shows theoretical time/temperature relationship thermal conduction reflow soldering. This method particularly suited thick film substrates often combined with infrared heating.
MBC938
Screen printing
This best high-volume production method solder paste application. emulsion-coated, fine mesh screen with apertures etched emulsion coincide with surfaces soldered placed over substrate. squeegee passed across screen force solder paste through apertures substrate. layer thickness screened solder paste usually between
Stencilling
this method stencil with etched holes pass paste used. thickness stencil determines amount amount solder paste that deposited substrate. This method also suited high-volume work.
Fig.6
Theoretical time temperature curve typical thermal conductive reflow cycle.
Dispensing
computer-controlled pressure syringe dispenses small doses paste where required. This method mainly suitable small production runs laboratory use.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
Infrared
General
MBC937
infrared oven several heating elements giving broad spectrum infrared radiation, normally above below closed loop belt system. There separate zones preheating, soldering cooling. Dwell time soldering zone kept short possible prevent damage components substrate. typical heating profile shown Fig.7. This reflow method often applied double-sided prints.
Vapour phase
substrate immersed vapours suitable boiling liquid. vapours transfer latent heat condensation substrate solder reflow takes place. Temperature controlled precisely boiling point liquid given pressure. Some systems employ vapour zones, above other. elevator tray, suspended from hoist mechanism passes substrate vertically through first vapour zone into secondary soldering zone then hoists vapour cooled. theoretical time/temperature relationship this method shown Fig.8.
preheating max. soldering cooling
Fig.7
Typical temperature profile infrared oven operating belt speed 0.41 min.
MBC939
free cooling removal phase time soldering zone
entering phase soldering zone time soldering zone
Fig.8
Theoretical time temperature curve relationship dual vapour reflow soldering.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
transistors Soldering footprints transistors included this handbook follows: SOT143/SOT143R FOOTPRINTS
General
handbook, full pagewidth
3.25 0.60 (3x) 0.50 (3x) solder lands 0.60 (4x) 2.70 1.30 3.00 occupied area solder paste solder resist
0.90 1.00 2.50 Dimensions Placement accuracy: ±0.25
MSA441
Fig.9 Reflow soldering footprint SOT143; typical dimensions.
handbook, full pagewidth
4.45 1.20 (3x) solder lands solder resist occupied area
1.15 4.00 4.60
preferred transport direction during soldering
MSA422
1.00 3.40
Dimensions Placement accuracy: ±0.25
Fig.10 Wave soldering footprint SOT143; typical dimensions.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
SOT223 FOOTPRINTS
General
handbook, full pagewidth
7.00 3.85 3.60 3.50 0.30 solder lands 1.20 (4x) solder resist occupied area solder paste
7.40
3.90 4.80 7.65
1.20 (3x) 1.30 (3x) 5.90 6.15
MSA443
Dimensions Placement accuracy: ±0.25
Fig.11 Reflow soldering footprint SOT223; typical dimensions.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
General
handbook, full pagewidth
8.90 6.70 solder lands solder resist occupied area
4.30 8.10 8.70
preferred transport direction during soldering 1.90 (2x) 1.10 7.30
MSA424
Dimensions Placement accuracy: ±0.25
Fig.12 Wave soldering footprint SOT223; typical dimensions.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
SOT343 FOOTPRINTS
General
handbook, full pagewidth
2.50 0.60 (3x) 0.50 (3x) 0.55 (4x) 1.30 2.40 2.70 solder paste solder lands solder resist occupied area
MSA430
0.70 0.80 1.90
Dimensions Placement accuracy: ±0.25
Fig.13 Reflow soldering footprint SOT343; typical dimensions.
handbook, full pagewidth
3.65 0.90 (3x)
solder lands 2.30 solder resist occupied area 1.15 4.00
3.00
transport direction during soldering 1.00 2.70
MSA421
Dimensions Placement accuracy: ±0.25
Fig.14 Wave soldering footprint SOT343; typical dimensions.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
SOT96 (SO8) FOOTPRINTS
General
5.50 0.60 solder lands occupied area
7.00 6.60 4.00
1.30
MSA444
1.27
Dimensions Placement accuracy: ±0.25
Fig.15 Reflow soldering footprint SOT96 (SO8); typical dimensions.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
General
7.10 0.60 solder lands solder resist occupied area
9.40 8.00 3.80
1.20
2.10
1.27 preferred transport direction during soldering
MSA445
Dimensions Placement accuracy: ±0.25
Fig.16 Wave soldering footprint SOT96 (SO8); typical dimensions.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
SOLDERING MODULES modules soldered using reflow technique. Wave soldering allowed modules. Conditions reflow soldering follows: indicated temperatures those solder interfaces. Advised solder types types with liquidus below equal Solder dots solder prints must large enough contact areas. Footprints soldering should cover module contact area +0.1 sides. Soldering carried using conveyor oven, oven, infrared oven combination these ovens. Hand soldering must avoided because soldering iron exceed maximum permitted temperature damage module. maximum soldering times different temperatures indicated follows: (maximum temperature), soldering curve shown Fig.17: Cleaning following used cleaning: Alcohol Bio-Act (Terpene Hydrocarbon) Triclean Acetone. Ultrasonic cleaning should used since this cause serious damage product.
General
handbook, halfpage
MLB740
Fig.17 Maximum allowable temperature profile.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
MOUNTING FLANGE MOUNTED MODULES General modules manufactured using ceramic substrate soldered copper iron flange mounting base; this causes small thermal mismatch between these components. further thermal mismatch will exist between mounting base heatsink which mounted. Because these mismatches, precautions must taken avoid unnecessary mechanical stresses being applied ceramic substrate other components within module resulting from variations temperature during operating cycles. Design heatsink ensure that maximum specified mounting base temperature will exceeded under maximum fault conditions, module should always mounted heatsink suitable thermal resistance. mounting area heatsink should flat free from burrs loose particles. Particular attention should paid mounting hole areas. maximum amount bowing along plane module should exceed Where anodizing used, area under module should milled clean presence anodizing under module result high resistance earth paths, leading oscillation early failure, addition poor thermal contact. heatsink should rigid prone bowing under thermal cycling conditions. thickness solid heatsink should less than ensure rigid assembly. finned heatsinks, module should mounted along plane parallel fins. Mounting module ensure good thermal contact prevent mechanical stresses when bolted down, flatness mounting base designed typically better than
General
module should mounted heatsink using bolts with flat washers. bolts should first tightened "finger tight" then further tightened alternating steps maximum torque thin, even layer thermal compound should used between mounting base heatsink achieve best possible contact thermal resistance. Excessive thermal compound will result increase thermal resistance possible bowing mounting base; little will also result poor thermal resistance. Once mounted heatsink, module leads soldered printed-circuit board. soldering iron used temperature maximum seconds distance from plastic cap. precautions must taken protect device from electro-static damage. Electrical connections main earth return path modules mounting base; therefore important that heatsink well earthed that return paths kept short possible. Failure ensure this result loss output power oscillation, which turn will have detrimental effect module life. output connection should correctly-designed terminations. Failure this will result mismatch being presented module, with resulting reduction module life. CAUTION Under circumstances must maximum specified operating storage temperatures exceeded, even short periods.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
THERMAL CONSIDERATIONS Thermal resistance Circuit performance long-term reliability affected temperature transistor die. Normally, both improved keeping temperature (junction temperature) low. Electrical power dissipated semiconductor device source heat. This increases temperature about some reference point, normally ambient temperature still air. size increase temperature depends amount power dissipated circuit thermal resistance between heat source reference point. Devices lose most their heat conduction when mounted printed board, substrate heatsink. Referring Fig.18 (for surface mounted devices mounted substrate), heat conducts from source (the junction) package leads soldered connections substrate. Some heat radiates from package into surrounding where dispersed convection forced cooling air. Heat that radiates from substrate dispersed same way.
General
elements thermal resistance shown Fig.19 defined follows: j-mb thermal resistance from junction mounting base thermal resistance from junction case thermal resistance from junction soldering point thermal resistance from soldering point ambient thermal resistance from case ambient (Rth same most packages) thermal resistance from junction ambient.
temperature junction depends ability package mounting transfer heat from junction region ambient environment. basic relationship between junction temperature power dissipation where: Tamb Ptot maximum junction temperature ambient temperature maximum power handling capability device, including effects external loads when applicable. Tamb Ptot (Rth s-a) Tamb Ptot (Rth j-a)
handbook, halfpage
MBB438
expression max, only Tamb varied user. package mounting technique flow cooling factors that affect s-a. device power dissipation controlled limited extent under recommended usage, supply voltage circuit loading dictate fixed power maximum. value essentially independent external mounting method cooling air; sensitive materials used package construction, bonding method area, which fixed. Values j-s, given device data sheets. applications where temperature case stabilized large temperature-controlled heatsink, junction temperature calculated from Tcase Ptot using soldering point definition, from Tsolder Ptot j-s.
Heat radiates from package ambient. Heat conducts leads `2', solder joints substrate `4'.
Fig.18 Heat losses.
1996
Philips Semiconductors
Power Modules Transistors Mobile Phones
General
handbook, halfpage
junction
j-mb
soldering point case ambient
MBB439
Fig.19 Representation thermal resistance paths device mounted substrate printed board.
1996
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